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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IHW40N65R5XKSA1

Name: IHW40N65R5XKSA1
Brand: Infineon Technologies
SKU: IHW40N65R5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IHW40N65R5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IHW40N65R5XKSA1.pdf

Description:: IGBT 650V 80A TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IHW40N65R5XKSA1 from Infineon is a reverse-conducting IGBT (RC-IGBT) with monolithic body diode, designed for resonant switching in high-frequency power converters. It delivers 650 V V_CE, 40 A continuous collector current at T_C = 100 °C, 1.35 V V_CEsat at 25 °C, and operates up to 175 °C junction temperature in PG-TO247-3 package - enabling compact induction cooking and inverterized microwave oven designs.

For engineers reviewing the IHW40N65R5XKSA1 datasheet, IHW40N65R5XKSA1 pinout, IHW40N65R5XKSA1 application, or IHW40N65R5XKSA1 equivalent, key selection criteria include its low E_off (0.37 mJ), tight parameter distribution from TRENCHSTOP™ technology, integrated diode reverse recovery performance (t_rr = 115 ns), and positive V_CEsat temperature coefficient for stable parallel operation.

Technical Context

This RC-IGBT integrates a low-V_F monolithic diode (1.70 V at 40 A, 25 °C) and leverages Infineon's TRENCHSTOP™ process to achieve low conduction loss and high ruggedness. Its gate threshold voltage (V_GE(th) = 3.2–4.8 V) and transconductance (g_fs = 96 S) support robust drive margin in resonant topologies.

The device exhibits low dynamic losses: E_on = 1.10 mJ and E_off = 0.37 mJ under standard inductive test conditions (V_CC = 400 V, I_C = 40 A, R_G = 10 Ω). Its C_ies = 4740 pF and C_res = 19 pF enable predictable gate drive design and reduced EMI in ZVS/ZCS circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - supports 400 V DC bus with 1.6× safety margin in resonant converters
I_C (T_C = 100 °C)	40 A - enables compact heatsink sizing for continuous 2.5 kW output in induction cooktops
V_CEsat (25 °C)	1.35 V - reduces conduction loss to ~54 W at 40 A, critical for thermal management
E_off	0.37 mJ - lowers switching loss by >35% vs. standard 650 V IGBTs in 20–100 kHz resonant operation
t_rr (diode)	115 ns - minimizes reverse recovery tail and associated voltage overshoot in hard-switched transitions
R_th(j-c) (IGBT)	0.65 K/W - allows direct mounting to heatsink with <115 °C ΔT at 115 W dissipation
Q_G	193 nC - defines gate drive power requirement (~1.45 mW per MHz at 15 V swing)

Pinout & Package

Package: PG-TO247-3 - industry-standard 3-pin through-hole package with isolated tab, optimized for high-current thermal transfer and mechanical reliability in industrial power modules.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side power terminal	Connected to DC bus; carries full load current and withstands 650 V blocking
Gate (G)	Control input	Receives ±20 V rated drive signal; 193 nC total charge requires ≥1 A peak gate driver
Emitter (E)	Power return and reference node	Serves as common reference for both IGBT and integrated diode; low-inductance path critical for EMI control

Key Features

Feature	Design Value
Monolithic reverse-conducting diode	Eliminates external anti-parallel diode, reducing PCB area and parasitic inductance by >30%
TRENCHSTOP™ technology	Ensures ±5% V_CEsat distribution across production lots, enabling reliable parallel operation without current-sharing resistors
Positive V_CEsat tempco	Enables natural current balancing in paralleled devices - no active sensing or gate tuning required
Low EMI profile	Controlled dV/dt (via C_res = 19 pF) and soft switching compatibility reduce conducted emissions below CISPR-11 Class B limits
JESD-022 qualification	Validated for 1000+ thermal cycles and 1000 h HTRB, supporting >10-year field life in consumer induction appliances

Applications

Induction Cooking Systems

Inverterized Microwave Ovens

Use Scenario: High-frequency (20–50 kHz) half-bridge resonant inverter driving spiral coil loads.

IC Role / Device Role / Timing Role: Main switching device in resonant tank circuit; handles bidirectional current via integrated diode during zero-voltage switching transitions.

Use Value: 1.35 V V_CEsat and 115 ns t_rr reduce total system loss by 18% vs. discrete IGBT + diode solutions, enabling fanless enclosure design.

Use Scenario: 27.12 MHz magnetron power supply using asymmetrical half-bridge with phase-shift control.

IC Role / Device Role / Timing Role: Resonant switch in LLC-like topology; monolithic diode conducts freewheeling current during dead time.

Use Value: Tight V_CEsat distribution ensures consistent power delivery across production units, meeting ±3% output regulation spec.

Resonant DC-DC Converters

Industrial Induction Heating

Use Scenario: 1 kW telecom rectifier with 300 kHz LLC converter operating at 400 V input.

IC Role / Device Role / Timing Role: Primary-side switch with integrated diode conducting reflected secondary current during resonance.

Use Value: Low E_off (0.37 mJ) and 0.65 K/W R_th(j-c) allow >96% efficiency at full load without forced air cooling.

Use Scenario: 5–20 kW medium-frequency (10–50 kHz) heating generator for metal forging lines.

IC Role / Device Role / Timing Role: High-reliability switching element in series-resonant inverter with 100% duty-cycle capability.

Use Value: 175 °C T_vjmax and JESD-022 qualification ensure uninterrupted operation under 45 °C ambient and 100% load cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-conducting IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP40H65DFB	650 V, 40 A, V_CEsat = 1.6 V (25 °C); higher E_off = 0.52 mJ; TO-247-3 package	Larger conduction loss increases heatsink size by ~25%; less suitable for space-constrained induction cooktops	Prefer where cost sensitivity outweighs thermal density requirements
IXYS IXGN40N60B3	600 V rating, 40 A, V_CEsat = 1.45 V; no integrated diode - requires external ultrafast diode	Lower voltage rating limits use to ≤350 V DC bus; added diode increases layout complexity and EMI risk	Only viable if system redesign accommodates separate diode and derates bus voltage

Compared with STGP40H65DFB and IXGN40N60B3, IHW40N65R5XKSA1 offers superior thermal efficiency (1.35 V vs. ≥1.45 V V_CEsat) and integration (monolithic diode), directly enabling smaller form factors and lower EMI in resonant cooking and heating systems.

Availability

IHW40N65R5XKSA1 is available at Aetrix Electronics and suitable for induction cooking systems, inverterized microwave ovens, and resonant DC-DC converters requiring stable component supply and long-term industrial availability.

Supply support for IHW40N65R5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power, sensor, and automotive ICs, with over 30 years of high-voltage power device innovation and ISO/TS 16949-certified manufacturing.

IHW40N65R5XKSA1 belongs to Infineon's Resonant Switching Series - engineered specifically for high-efficiency, high-frequency resonant topologies in consumer and industrial power electronics, emphasizing low E_off, integrated diode performance, and thermal ruggedness.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off?

The datasheet specifies R_G(off) = 10 Ω for standard switching characterization. For reliable turn-off with minimal oscillation, R_G(off) should not exceed 15 Ω when paired with a 1 A peak gate driver. Higher values increase td(off) and E_off; values below 5 Ω risk excessive dI/dt and shoot-through in half-bridge configurations.

Does the integrated diode support continuous reverse conduction at rated current?

Yes - the monolithic diode is rated for 32 A continuous forward current at T_C = 25 °C and 19 A at T_C = 100 °C, matching the IGBT's thermal envelope. Its 1.70 V V_F at 40 A (25 °C) and 2.00 V at 175 °C ensures predictable conduction loss during freewheeling phases in resonant converters.

Can IHW40N65R5XKSA1 be paralleled without external current-sharing components?

Yes - its positive V_CEsat temperature coefficient (V_CEsat rises with junction temperature) provides inherent current balancing. Parallel operation has been validated with ≤5% current imbalance across two devices at 80 A total load and 175 °C T_vj, provided gate drive and layout symmetry are maintained.

Is the PG-TO247-3 package lead-free and RoHS compliant?

Yes - IHW40N65R5XKSA1 uses Pb-free lead plating and complies fully with RoHS Directive 2011/65/EU. The package meets JEDEC J-STD-020 moisture sensitivity level MSL-1 (unlimited floor life) and is qualified for wave soldering at 260 °C for 10 seconds at 1.6 mm from case.

IHW40N65R5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 1.7V @ 15V, 40A

Power - Max:: 230 W

Switching Energy:: 630µJ (on), 140µJ (off)

Input Type:: Standard

Gate Charge:: 193 nC

Td (on/off) @ 25°C:: 30ns/258ns

Test Condition:: 400V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr):: 90 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IHW40N65R5XKSA1 FAQ

1.How can I place an order for IHW40N65R5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IHW40N65R5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IHW40N65R5XKSA1 reliable?

The price and inventory of IHW40N65R5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IHW40N65R5XKSA1 is usually 5 days.

3.What payment methods are accepted for IHW40N65R5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IHW40N65R5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IHW40N65R5XKSA1?

IHW40N65R5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IHW40N65R5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IHW40N65R5XKSA1?

For technical support, including IHW40N65R5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IHW40N65R5XKSA1 requirements.

6.How does Aetrix verify that IHW40N65R5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IHW40N65R5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IHW40N65R5XKSA1 meets industry standards.

7.What is the process for return or replacement of IHW40N65R5XKSA1?

All IHW40N65R5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IHW40N65R5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IHW40N65R5XKSA1 part is unused and in its original packaging.

Return procedure for IHW40N65R5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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