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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IHW40T60FKSA1

Name: IHW40T60FKSA1
Brand: Infineon Technologies
SKU: IHW40T60FKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IHW40T60FKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IHW40T60FKSA1.pdf

Description:: IGBT 600V 80A 303W TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IHW40T60FKSA1 from Infineon Technologies is a 600 V, 40 A TRENCHSTOP™ IGBT with integrated emitter-controlled high-efficiency (HE) diode in a PG-TO247-3 package. It delivers low V_CE(sat) of 1.55 V (typ. at T_j = 25°C), 5 µs short-circuit withstand time at V_GE = 15 V, and operates up to 175°C junction temperature-enabling compact, high-efficiency inductive cooking inverters.

For engineers reviewing the IHW40T60FKSA1 datasheet, IHW40T60FKSA1 pinout, IHW40T60FKSA1 application, or IHW40T60FKSA1 equivalent, key selection criteria include its dual-die DuoPack configuration, soft fast-recovery diode performance (t_rr = 143 ns typ. at 25°C), gate charge of 215 nC, thermal resistance R_thJC = 0.49 K/W for IGBT and 1.05 K/W for diode, and JEDEC JESD47 qualification.

Technical Context

This IGBT employs TRENCHSTOP™ and fieldstop technology optimized for 600 V hard- and soft-switching applications. Its positive temperature coefficient for V_CE(sat) enables stable parallel operation, while tight parameter distribution ensures consistent dynamic behavior across production lots.

The integrated anti-parallel HE diode features low Q_rr (0.92 µC typ. at 25°C) and controlled reverse recovery (I_rrm = 16.3 A, di_r/dt = 603 A/µs), minimizing switching losses and EMI in resonant topologies. Gate drive requirements are defined by 215 nC total charge and ±20 V steady-state gate-emitter voltage rating.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - Maximum blocking voltage compatible with 400 V DC bus designs with margin.
I_C	40 A continuous - Rated collector current at T_C = 100°C, enabling high-power density inverter stages.
V_CE(sat)	1.55 V (typ. @ 25°C) - Low conduction loss reduces thermal stress and improves efficiency at rated load.
t_SC	5 µs - Short-circuit withstand time at V_GE = 15 V, V_CC ≤ 400 V, T_j ≤ 150°C supports robust fault handling.
R_thJC (IGBT)	0.49 K/W - Enables high power dissipation (303 W @ T_C = 25°C) with manageable case-to-junction delta-T.
Q_G	215 nC - Total gate charge determines required driver peak current and influences switching speed control.
t_rr (diode)	143 ns (typ. @ 25°C) - Fast, soft reverse recovery minimizes voltage overshoot and EMI in ZVS/ZCS circuits.

Pinout & Package

Supplied in PG-TO247-3 package with isolated mounting base and standard lead spacing for industrial heatsink integration.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Collector)	Main high-side power terminal	Connects to DC bus positive; carries full load current and must be routed with low-inductance layout.
Pin 2 (Gate)	Control input	Drives IGBT turn-on/turn-off; requires low-impedance path and gate resistor (r_G = 5.6 Ω typical) for controlled dV/dt.
Pin 3 (Emitter)	Power return and reference node	Serves as common emitter for IGBT and cathode connection point for integrated diode; critical for stable gate drive referencing.

Key Features

Feature	Design Value
Low V_CE(sat) with positive tempco	1.55 V @ 25°C, rising to 1.90 V @ 175°C - Ensures current sharing stability in paralleled configurations.
TRENCHSTOP™ + Fieldstop architecture	Optimized for 600 V - Delivers tight parameter spread (±5% V_CE(sat)) and ruggedness under repetitive short-circuit stress.
Integrated soft-recovery HE diode	t_rr = 143 ns, Q_rr = 0.92 µC @ 25°C - Reduces diode-induced switching losses and snubber requirements in half-bridge inverters.
JEDEC JESD47 qualified	Qualified for target applications - Confirms reliability under accelerated stress conditions including temperature cycling and HAST.

Applications

Induction Cooktop Inverter

UPS Inverter Stage

Use Scenario: High-frequency (20–50 kHz) resonant half-bridge driving planar induction coils with variable load coupling.

IC Role / Device Role / Timing Role: Main switching device in upper/lower leg; handles 40 A RMS load with soft-recovery diode enabling zero-voltage switching transitions.

Use Value: 1.55 V V_CE(sat) and 0.49 K/W R_thJC allow >97% inverter efficiency at 3.5 kW output without forced air cooling.

Use Scenario: 6 kVA online double-conversion UPS with 50/60 Hz output and bidirectional energy flow capability.

IC Role / Device Role / Timing Role: IGBT switch in DC-link inverter stage; integrated diode supports regenerative braking and battery charging paths.

Use Value: 5 µs short-circuit withstand time and 175°C max junction temperature support fault ride-through during grid transients without desaturation shutdown.

Industrial Motor Drive (HVAC)

EV Onboard Charger (PFC Stage)

Use Scenario: Sensorless vector-controlled 7.5 kW HVAC compressor drive operating at 4 kHz PWM with field-oriented control.

IC Role / Device Role / Timing Role: Output bridge switch; leverages positive V_CE(sat) tempco for inherent current balancing across parallel devices.

Use Value: Tight parameter distribution (±5%) eliminates need for individual current-sense calibration, reducing BOM and firmware complexity.

Use Scenario: Two-stage 6.6 kW OBC with boost PFC front-end and LLC DC-DC stage; IGBT used in interleaved PFC legs.

IC Role / Device Role / Timing Role: High-current PFC switch handling 30 A average current; integrated diode replaces external fast recovery diode.

Use Value: 215 nC gate charge and low E_off (0.92 mJ @ 25°C) enable <100 kHz operation with <1.2 W gate drive loss per device.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT + integrated diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW40H65DFB	650 V rating, 40 A, V_CE(sat) = 1.6 V, t_SC = 3 µs, R_thJC = 0.55 K/W	Higher voltage margin but lower short-circuit ruggedness and higher conduction loss	Preferred where 650 V bus margin is critical and fault duration is strictly limited.
IXYS IXGN40N60A3	600 V, 40 A, V_CE(sat) = 1.8 V, t_SC = 10 µs, R_thJC = 0.52 K/W, no integrated diode	Requires external ultrafast diode; superior short-circuit immunity but higher system component count	Chosen when extended short-circuit tolerance outweighs board space and cost of discrete diode integration.

Compared with STGW40H65DFB and IXGN40N60A3, IHW40T60FKSA1 offers the lowest conduction loss and best thermal resistance among 600 V 40 A DuoPack IGBTs, making it optimal for thermally constrained inductive heating and high-efficiency PFC designs where integrated diode functionality reduces layout complexity.

Availability

IHW40T60FKSA1 is available at Aetrix Electronics and suitable for inductive cooking inverters, UPS systems, industrial motor drives, and onboard EV charger PFC stages requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant manufacturing.

Supply support for IHW40T60FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IHW40T60FKSA1 belongs to the TRENCHSTOP™ IGBT Series, engineered specifically for high-efficiency, high-reliability 600 V switching applications in consumer induction heating, industrial motor control, and power conversion systems.

FAQ

What is the maximum allowable gate-emitter voltage for continuous operation?

The IHW40T60FKSA1 has a continuous gate-emitter voltage rating of ±20 V. Transient operation up to ±25 V is permitted for pulse widths under 10 µs with duty cycle less than 0.01. Exceeding ±20 V continuously risks gate oxide degradation and threshold voltage shift over time.

Does this device require an external freewheeling diode?

No. The IHW40T60FKSA1 integrates an emitter-controlled high-efficiency (HE) diode in a DuoPack configuration. This diode provides soft, fast reverse recovery (t_rr = 143 ns typ.) and is rated for 60 A DC at T_C = 25°C, eliminating the need for an external diode in standard half-bridge or inverter applications.

How does junction temperature affect V_CE(sat) performance?

V_CE(sat) increases predictably with junction temperature due to the device's positive temperature coefficient: from 1.55 V at 25°C to 1.90 V at 175°C (typ.). This behavior ensures stable current sharing in paralleled configurations and simplifies thermal derating calculations in thermal design.

Is the PG-TO247-3 package electrically insulated?

No. The PG-TO247-3 package used for IHW40T60FKSA1 has an electrically conductive metal tab (collector-connected). Electrical isolation between the collector and heatsink must be achieved using an insulating washer or ceramic pad. Thermal interface material must not compromise dielectric strength.

IHW40T60FKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 2.05V @ 15V, 40A

Power - Max:: 303 W

Switching Energy:: 920µJ

Input Type:: Standard

Gate Charge:: 215 nC

Td (on/off) @ 25°C:: -/186ns

Test Condition:: 400V, 40A, 5.6Ohm, 15V

Reverse Recovery Time (trr):: 143 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

IHW40T60FKSA1 FAQ

1.How can I place an order for IHW40T60FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IHW40T60FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IHW40T60FKSA1 reliable?

The price and inventory of IHW40T60FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IHW40T60FKSA1 is usually 5 days.

3.What payment methods are accepted for IHW40T60FKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IHW40T60FKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IHW40T60FKSA1?

IHW40T60FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IHW40T60FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IHW40T60FKSA1?

For technical support, including IHW40T60FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IHW40T60FKSA1 requirements.

6.How does Aetrix verify that IHW40T60FKSA1 is sourced from the original manufacturer or authorized distributors?

All IHW40T60FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IHW40T60FKSA1 meets industry standards.

7.What is the process for return or replacement of IHW40T60FKSA1?

All IHW40T60FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IHW40T60FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IHW40T60FKSA1 part is unused and in its original packaging.

Return procedure for IHW40T60FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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