Infineon Technologies IHW50N65R5XKSA1

Overview

IHW50N65R5XKSA1 from Infineon is a reverse-conducting IGBT (RC-IGBT) with monolithic body diode, designed for resonant switching topologies in high-frequency power conversion. It delivers 650 V V_CE, 50 A I_C, 1.35 V V_CEsat at 25°C, and operates up to 175°C junction temperature in PG-TO247-3 package - enabling compact induction cooking and inverterized microwave oven inverters.

For engineers reviewing the IHW50N65R5XKSA1 datasheet, IHW50N65R5XKSA1 pinout, IHW50N65R5XKSA1 application, or IHW50N65R5XKSA1 equivalent, key selection criteria include its low E_off (0.45 mJ), tight V_CEsat distribution, positive temperature coefficient for parallel operation, and integrated diode with 137 ns t_rr at 25°C.

Technical Context

This RC-IGBT integrates a fast, low-V_F diode (1.70 V at 50 A, 25°C) monolithically on the same die, eliminating external anti-parallel diode layout complexity. Its TRENCHSTOP™ structure ensures stable V_CEsat across temperature (1.60 V at 175°C) and tight parameter spread for consistent system timing.

Optimized for zero-voltage switching (ZVS) and zero-current switching (ZCS) resonant converters, it features low C_ies (6140 pF), low E_MI, and robust SOA up to 150 A pulsed current with 1 µs pulse width at 650 V - supporting reliable operation under hard-switching transients during startup or fault recovery.

Key Specifications

Pinout & Package

Package: PG-TO247-3 (standard through-hole, isolated tab, 3-terminal configuration). Pin assignment confirmed per Infineon datasheet Rev. 2.4 (2015): Collector (C) and Emitter (E) share common thermal path via metal tab; Gate (G) is electrically isolated.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-conducting IGBT applications.

Compared with IKW50N65ES5XKSA1 and IRGP50B60PD1, IHW50N65R5XKSA1 offers best-in-class balance of low V_CEsat, moderate E_off, and proven ruggedness in industrial resonant inverters - making it optimal for 20–60 kHz induction heating where thermal stability and SOA margin are critical.

Availability

IHW50N65R5XKSA1 is available at Aetrix Electronics and suitable for induction cooking inverters, inverterized microwave ovens, and resonant DC-DC converters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IHW50N65R5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions for industrial, automotive, and renewable energy markets.

IHW50N65R5XKSA1 belongs to the Resonant Switching Series RC-IGBT product line, engineered specifically for high-efficiency, high-reliability resonant topologies in consumer and industrial power electronics.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG(on) = RG(off) = 8 Ω for characterization. For stable operation, use 5–12 Ω to balance switching speed and gate oscillation risk. Higher values increase td(off) and E_off; lower values risk gate ringing due to 13 nH internal emitter inductance and PCB layout parasitics.

Does the integrated diode require external snubbing in resonant applications?

No external snubber is required when operating within the specified ZVS/ZCS conditions (V_CC ≤ 480 V, di_F/dt ≤ 1100 A/µs). The monolithic diode's 137 ns t_rr and -1100 A/µs dirr/dt are matched to typical resonant tank dynamics - verified by Infineon's test circuit in Figure E.

How does thermal resistance differ between IGBT and diode sections?

The IGBT section has R_th(j-c) = 0.53 K/W, while the integrated diode has R_th(j-c) = 2.29 K/W - reflecting different active area and current density. This asymmetry must be considered in thermal modeling: diode conduction losses dominate heating during freewheeling intervals.

Is the PG-TO247-3 package compatible with standard TO-247 heatsinks?

Yes - PG-TO247-3 uses JEDEC-standard TO-247 mechanical outline with isolated collector tab. Mounting torque is 0.6 Nm (M3 screw), and soldering temperature is rated for 260°C for 10 s. Ensure heatsink flatness ≤ 0.05 mm and use thermal interface material rated for >175°C operation.