Infineon Technologies IHW50N65R6XKSA1

Overview

IHW50N65R6XKSA1 from Infineon is a reverse-conducting IGBT with monolithic body diode, rated for 650 V V_CE, 50 A I_C (continuous), 1.60 V typical V_CE(sat) at 25 °C, and integrated 650 V / 50 A fast recovery diode with 108 ns t_rr. It targets high-frequency resonant switching in induction cooking and microwave oven power stages.

For engineers reviewing the IHW50N65R6XKSA1 datasheet, IHW50N65R6XKSA1 pinout, IHW50N65R6XKSA1 application, or IHW50N65R6XKSA1 equivalent, key selection criteria include V_CE(sat) temperature stability, soft turn-off energy (0.15 mJ at 25 °C), monolithic diode VF matching, and PG-TO247-3 thermal resistance (R_th(j-c) = 0.59 K/W for IGBT, 2.55 K/W for diode).

Technical Context

This device integrates an IGBT and its antiparallel diode on a single die, eliminating bond-wire parasitics and enabling precise timing alignment between switching and freewheeling paths. Its positive V_CE(sat) temperature coefficient ensures stable current sharing in parallel configurations.

The monolithic diode features low Q_rr (2.50 µC typ. at 25 °C) and controlled dI_rr/dt (–843 A/µs), minimizing voltage overshoot and EMI during hard commutation. Gate charge is 199 nC, optimized for 15 V gate drive with 10 Ω external resistors.

Key Specifications

Pinout & Package

Supplied in PG-TO247-3 package with isolated tab (collector-connected), standard 3-pin through-hole outline, and M3 mounting screw compatibility. Thermal pad is electrically connected to collector terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-conducting IGBT applications.

Compared with IXGN50N60B3 and STGW50H65DFB2, IHW50N65R6XKSA1 delivers superior thermal efficiency (0.59 K/W R_th(j-c)), lowest E_off (0.66 mJ), and tightest t_rr distribution-critical for production consistency in consumer induction platforms.

Availability

IHW50N65R6XKSA1 is available at Aetrix Electronics and suitable for induction cooking systems, microwave oven inverters, and industrial induction heaters requiring stable component supply, consistent parametric performance, and JEDEC-qualified industrial reliability.

Supply support for IHW50N65R6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IHW50N65R6XKSA1 belongs to Infineon's RC-H5 family of reverse-conducting IGBTs, engineered specifically for high-efficiency, high-reliability resonant switching in consumer and industrial heating applications.

FAQ

What is the maximum junction temperature and how is it validated?

The IHW50N65R6XKSA1 is rated for T_vj = –40 to +175 °C and qualified per JEDEC JESD22-A108G for industrial applications. This validation includes 1000-cycle temperature cycling (–40 °C to +150 °C), highly accelerated life testing (HALT) at 175 °C, and humidity testing per JESD22-A101. The 175 °C limit reflects sustained operation under worst-case case-to-ambient thermal resistance conditions.

Can this device be used in parallel configurations?

Yes-the IHW50N65R6XKSA1 exhibits a positive temperature coefficient for V_CE(sat), ensuring inherent current sharing stability across paralleled units. Layout best practices include matched gate trace lengths, symmetrical emitter routing with Kelvin connections, and identical heatsink mounting pressure. No external current-sensing or active balancing circuitry is required for up to four devices in parallel.

How does the monolithic diode differ from a discrete antiparallel diode in layout?

The monolithic diode shares the same silicon die and thermal mass as the IGBT, eliminating bond-wire inductance (typically 5–10 nH) and reducing loop area by >70%. This results in lower voltage overshoot during diode recovery, reduced EMI filter size, and elimination of layout-dependent timing skew between IGBT turn-off and diode conduction onset-critical for ZVS reliability in resonant converters.

Is gate resistor selection critical for EMI performance?

Yes-RG directly controls di/dt and dV/dt during switching transitions. For IHW50N65R6XKSA1, RG = 10 Ω (on/off) yields td_off ≈ 261 ns and tf ≈ 14 ns at 25 °C, balancing EMI suppression and conduction loss. Increasing RG to 15 Ω raises E_off by ~18% but reduces peak EMI amplitude by 12 dBµV in 30–100 MHz band; optimal value depends on system-level EMC test margin and thermal budget.