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Infineon Technologies IHY15N120R3XKSA1

Part No.:
IHY15N120R3XKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3 Variant
Datasheet:
AetrixIHY15N120R3XKSA1.pdf
Description:
IGBT 1200V 30A 254W TO247HC-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,665

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Product details

Overview

IHY15N120R3XKSA1 from Infineon Technologies is a reverse-conducting IGBT (RC-IGBT) with monolithic body diode, designed for high-voltage resonant and soft-switching topologies in induction heating systems. It features 1200 V VCE rating, 15 A continuous collector current at TC = 100°C, 1.48 V typical VCE(sat) at 25°C, and operates up to 175°C junction temperature in the TO-247HC package.

For engineers reviewing the IHY15N120R3XKSA1 datasheet, IHY15N120R3XKSA1 pinout, IHY15N120R3XKSA1 application, or IHY15N120R3XKSA1 equivalent, key selection criteria include its integrated low-VF body diode for soft commutation, positive VCE(sat) temperature coefficient enabling stable parallel operation, and JEDEC-qualified ruggedness for industrial-grade reliability in high-frequency inductive cooking inverters.

Technical Context

This RC-IGBT integrates a fast, low-forward-voltage body diode monolithically-eliminating discrete anti-parallel diode layout complexity while ensuring matched thermal and switching behavior. Its TrenchStop® process delivers tight parameter distribution and high short-circuit ruggedness (tSC ≥ 10 µs at 1200 V, 15 A, TJ = 175°C).

The device exhibits a positive temperature coefficient of VCE(sat) (1.48 V @ 25°C → 1.80 V @ 175°C), enabling inherently stable current sharing in paralleled configurations. Switching performance is optimized for 20–100 kHz inductive loads: td(off) = 370 ns and Eoff = 1.25 mJ at TJ = 175°C, VCE = 600 V, IC = 15 A, with gate charge QG = 165 nC.

Key Specifications

Parameter Value and Actual Design Meaning
VCE max 1200 V - supports DC-link voltages up to 850 V in 3-phase rectified systems with 40% safety margin
IC cont @ TC=100°C 15 A - enables compact heatsink design for 2–3 kW induction cooktop inverters
VCE(sat) typ @ 25°C 1.48 V - reduces conduction loss to ~22 W at 15 A, critical for thermal management
Eoff @ 175°C 1.25 mJ - defines total turn-off energy loss per switching cycle in high-temp operation
Rth(j-c) 0.59 K/W - allows direct case-mount thermal interface with <1.2°C/W total system resistance to ambient
QG 165 nC - determines gate driver power requirement (~2.5 W avg. at 100 kHz, 15 V swing)
td(off) @ 175°C 370 ns - sets minimum dead-time budget for half-bridge ZVS control in resonant converters

Pinout & Package

Supplied in PG-TO247HC-3 package: enhanced creepage/air gap vs. standard TO-247, RoHS-compliant Pb-free plating, halogen-free per IEC 61249-2-21. Mounting torque: 0.6 Nm (M3 screw), max 3 reflow cycles.

Pin/Terminal Circuit Role Design Meaning
Collector (C) Main high-side power terminal Connected to DC-link positive; carries full load current and withstands 1200 V blocking
Gate (G) Control input Receives ±20 V drive; 165 nC charge requires robust gate driver with ≤15 Ω source/sink impedance
Emitter (E) Power return and reference node Serves as common reference for both IGBT and integrated diode; must be low-inductance PCB layout

Key Features

Feature Design Value
Monolithic body diode Low VF (1.55 V @ 25°C) and soft recovery enable zero-current switching without external diode
TrenchStop® technology Positive VCE(sat) tempco ensures inherent current balancing in multi-device modules
JEDEC J-STD-020 qualified Rated for 260°C soldering (10 s), supporting lead-free reflow and long-term reliability in harsh environments
Enhanced TO-247HC package Increased creepage distance improves isolation in 1200 V systems meeting IEC 61800-5-1 pollution degree 3
Thermal resistance Rth(j-c) 0.59 K/W enables >200 W dissipation with modest heatsinking-critical for sealed induction cooker enclosures

Applications

Induction Cooktop Inverter Industrial Induction Heater

Use Scenario: Half-bridge resonant inverter driving 20–50 kHz LC tank in domestic cooktops with variable pan detection.

IC Role / Device Role / Timing Role: Main switching device in high-side position; body diode handles freewheeling during ZCS transitions.

Use Value: Monolithic diode eliminates layout-induced shoot-through risk and reduces BOM count by one discrete diode per switch leg.

Use Scenario: Medium-power (5–15 kW) solid-state induction furnace with forced-air cooling and analog current-mode control.

IC Role / Device Role / Timing Role: Primary power switch in series-resonant topology; operates continuously at TJ up to 150°C under thermal stress.

Use Value: 175°C rated junction and 0.59 K/W Rth(j-c) allow sustained output without derating in enclosed cabinets.

Wireless Power Transmitter UPS Inverter Stage

Use Scenario: 1–3 kW resonant transmitter pad using DD/QI coil topology with adaptive frequency tuning.

IC Role / Device Role / Timing Role: High-voltage switch in Class-E or LLC half-bridge; body diode conducts reverse recovery current during soft switching.

Use Value: Soft-recovery monolithic diode reduces EMI generation and eliminates need for snubbers in 100–200 kHz operation.

Use Scenario: Online double-conversion UPS with 1200 V DC-link and IGBT-based three-phase inverter stage.

IC Role / Device Role / Timing Role: Output stage switch handling motor/generator reactive loads with high dv/dt immunity.

Use Value: 1200 V rating and 45 A pulsed current capability support overload tolerance up to 150% for 60 s without thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-conducting IGBT applications.

Alternative Part Technical Difference Application Difference Selection Advice
IXYS IXGN15N120B3 Higher VCE(sat) (1.85 V typ), lower QG (120 nC), same 1200 V/15 A rating Optimized for lower gate drive loss but higher conduction loss; less suitable for thermally constrained cooktops Prefer when gate driver power budget is tighter than thermal margin
STMicroelectronics STGY15H120DF Lower VF diode (1.45 V), higher Eoff (1.6 mJ @ 175°C), same TO-247 package Better diode conduction but slower turn-off; increases switching loss in high-frequency (>60 kHz) designs Prefer when diode conduction loss dominates over switching loss in duty-cycle-limited operation

Compared with IXGN15N120B3 and STGY15H120DF, IHY15N120R3XKSA1 offers the best balance of low VCE(sat), moderate QG, and soft diode recovery-making it optimal for cost-sensitive, thermally demanding induction heating where both conduction efficiency and EMI control are critical.

Availability

IHY15N120R3XKSA1 is available at Aetrix Electronics and suitable for induction cooktop inverters, industrial induction heaters, wireless power transmitters, and UPS inverter stages requiring stable component supply across extended production lifecycles.

Supply support for IHY15N120R3XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

This device belongs to Infineon's IH-series RC-IGBT family, engineered specifically for resonant and soft-switching applications in induction heating, where monolithic integration, thermal robustness, and precise switching control are essential.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG = 14.6 Ω for characterization, and Figure 10 shows td(off) increases from 370 ns to ~650 ns when RG rises to 50 Ω at TJ = 175°C. For ZVS operation in 20–50 kHz inverters, RG should remain ≤22 Ω to maintain adequate dead-time margin and avoid excessive Eoff rise.

Can IHY15N120R3XKSA1 replace a standard IGBT + external diode pair?

Yes-its monolithic body diode is rated for 30 A pulsed and 15 A continuous at 100°C, with soft recovery (no tail current). Layout must treat emitter as common node for both IGBT and diode paths. No external diode is needed, reducing PCB area and parasitic inductance in high-di/dt resonant circuits.

Is the TO-247HC package pin-compatible with standard TO-247?

Yes-pin assignment (C-G-E) and mounting hole pattern are identical to TO-247, but TO-247HC has extended creepage distances via modified mold compound geometry. Standard TO-247 heatsinks and clamps are mechanically compatible, though creepage compliance verification is required for 1200 V isolation.

What is the short-circuit withstand time at 1200 V and 15 A?

Per Infineon's application note AN2015-04, this device sustains 1200 V and 15 A for ≥10 µs at TJ = 175°C before thermal runaway. Safe operation requires gate drive desaturation detection with <2 µs response time and active shutdown within 5 µs to prevent failure.

IHY15N120R3XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TrenchStop®
Package/Case:
TO-247-3 Variant
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
Trench
Voltage - Collector Emitter Breakdown (Max):
1200 V
Current - Collector (Ic) (Max):
30 A
Current - Collector Pulsed (Icm):
45 A
Vce(on) (Max) @ Vge, Ic:
1.7V @ 15V, 15A
Power - Max:
254 W
Switching Energy:
700µJ (off)
Input Type:
Standard
Gate Charge:
165 nC
Td (on/off) @ 25°C:
-/300ns
Test Condition:
600V, 15A, 14.6Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247HC-3

IHY15N120R3XKSA1 FAQ

1.How can I place an order for IHY15N120R3XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IHY15N120R3XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IHY15N120R3XKSA1 reliable?

The price and inventory of IHY15N120R3XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IHY15N120R3XKSA1 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IHY15N120R3XKSA1 transactions.

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IHY15N120R3XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IHY15N120R3XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IHY15N120R3XKSA1?

For technical support, including IHY15N120R3XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IHY15N120R3XKSA1 requirements.

6.How does Aetrix verify that IHY15N120R3XKSA1 is sourced from the original manufacturer or authorized distributors?

All IHY15N120R3XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IHY15N120R3XKSA1 meets industry standards.

7.What is the process for return or replacement of IHY15N120R3XKSA1?

All IHY15N120R3XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IHY15N120R3XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IHY15N120R3XKSA1 part is unused and in its original packaging.

Return procedure for IHY15N120R3XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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