Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IHY20N120R3XKSA1

Part No.:
IHY20N120R3XKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3 Variant
Datasheet:
AetrixIHY20N120R3XKSA1.pdf
Description:
IGBT 1200V 40A 310W TO247HC-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,608

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IHY20N120R3XKSA1 from Infineon is a reverse-conducting IGBT (RC-IGBT) with monolithic body diode, rated for 1200 V VCE, 20 A IC continuous at TC = 100°C, and 1.48 V VCE(sat) at 25°C - optimized for high-efficiency inductive cooking inverters operating up to 175°C junction temperature.

For engineers reviewing the IHY20N120R3XKSA1 datasheet, IHY20N120R3XKSA1 pinout, IHY20N120R3XKSA1 application, or IHY20N120R3XKSA1 equivalent, key selection criteria include its trench-stop technology-enabled positive VCE(sat) temperature coefficient, integrated low-VF body diode for soft commutation, and TO-247HC package with enhanced creepage/air gap for high-voltage isolation.

Technical Context

This RC-IGBT integrates a co-packaged, low-forward-voltage body diode on a single die, eliminating external anti-parallel diode requirements in half-bridge inverter legs. Its trench-stop structure delivers tight parameter distribution and stable switching behavior across -40°C to +175°C.

It features a 15.7 S transconductance, 211 nC total gate charge, and 0.48 K/W junction-to-case thermal resistance - enabling robust parallel operation and efficient thermal management in compact induction heating modules.

Key Specifications

Parameter Value and Actual Design Meaning
VCE max 1200 V - supports DC bus voltages up to 850 V in 3-phase rectified systems with margin for voltage spikes.
IC cont @ TC=100°C 20 A - defines continuous output current capability under real heatsink conditions in induction cooktop power stages.
VCE(sat) @ 25°C 1.48 V - directly determines conduction loss (Pcond ≈ IC × VCE(sat)) at room temperature.
Eoff @ 175°C 1.65 mJ - quantifies turn-off energy loss under worst-case thermal stress, critical for thermal design of 20–50 kHz inverters.
Rth(j-c) 0.48 K/W - enables calculation of junction temperature rise above heatsink (ΔT = Pdiss × 0.48).
Qg 211 nC - determines required gate driver peak current (Ipk = Qg/trise) for <100 ns switching transitions.
Tj max +175°C - allows sustained operation in sealed, thermally constrained induction coil enclosures without derating.

Pinout & Package

Supplied in PG-TO247HC-3 package - a reinforced variant of TO-247 with increased creepage (>4.5 mm) and clearance distances versus standard TO-247, qualified per JEDEC J-STD-020/JESD-022.

Pin/Terminal Circuit Role Design Meaning
Collector (C) Main high-side current path Connected to DC+ bus; carries full load current and must be routed with low-inductance layout to minimize voltage overshoot.
Gate (G) Control input Requires low-impedance drive (≤15 Ω series R) and local 100 nF decoupling to ensure clean 15 V switching edge and suppress oscillation.
Emitter (E) Power return and reference node Serves as common source for IGBT and body diode; must be star-connected to minimize ground bounce in half-bridge configurations.

Key Features

Feature Design Value
Monolithic body diode Low VF (1.55 V @ 25°C) and soft recovery enable zero-voltage switching (ZVS) in resonant inverter topologies without external diode.
TrenchStop® technology Positive VCE(sat) temperature coefficient ensures inherent current sharing in paralleled devices and stable operation at elevated temperatures.
TO-247HC package Enhanced creepage (>4.5 mm) meets IEC 60335-1 reinforced insulation requirements for household induction appliances.
JEDEC-qualified reliability Qualified to J-STD-020 (moisture sensitivity) and JESD-022 (HTSL, TST), supporting industrial-grade production life cycles.

Applications

Induction Cooktop Inverter Industrial Induction Heater

Use Scenario: Half-bridge resonant inverter driving 20–50 kHz LC tank for pan detection and heating control in domestic cooktops.

IC Role / Device Role / Timing Role: High-side switch in asymmetrical half-bridge; body diode conducts freewheeling current during dead-time.

Use Value: Monolithic diode eliminates discrete diode placement and layout parasitics, reducing EMI and improving ZVS margin by 15% over discrete solutions.

Use Scenario: Medium-power (3–6 kW) solid-state induction heater for metal hardening or brazing in factory environments.

IC Role / Device Role / Timing Role: Primary switching device in phase-shifted full-bridge topology; handles repetitive 100% duty-cycle bursts at 10–30 kHz.

Use Value: 175°C Tj rating and 0.48 K/W Rth(j-c) allow direct mounting to aluminum heatsinks without thermal derating in unventilated enclosures.

Induction-Based Water Heater Wireless Power Transfer Transmitter

Use Scenario: Compact 2–3 kW tankless water heater using series-resonant topology with digital frequency control.

IC Role / Device Role / Timing Role: Low-loss switching element in high-Q resonant circuit; body diode provides controlled reverse recovery during zero-current switching transitions.

Use Value: Soft-recovery body diode reduces di/dt-induced voltage ringing, lowering EMI filter component count by 30% compared to fast-recovery diode hybrids.

Use Scenario: 1–2 kW resonant transmitter pad for EV wireless charging (SAE J2954 compliant) operating at 85 kHz.

IC Role / Device Role / Timing Role: Inverter switch in Class-E or DAB topology; operates with precise gate timing to maintain constant-frequency resonance under variable coupling.

Use Value: Tight VCE(sat) distribution (±0.1 V) ensures consistent power delivery across multi-unit transmitter arrays without individual calibration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-conducting IGBT applications.

Alternative Part Technical Difference Application Difference Selection Advice
IXYS IXGN20N120B3 Higher VCE(sat) (1.75 V @ 25°C), larger Qg (240 nC), same TO-247 package but no monolithic diode - requires external ultrafast diode. Limited to non-resonant topologies where diode recovery is less critical; higher conduction loss reduces efficiency in 20–50 kHz range. Select only if existing PCB layout uses discrete diode footprint and thermal budget permits +0.27 V higher saturation drop.
STMicroelectronics STGW20H120DF2 Lower VCE(sat) (1.40 V), lower Eoff (1.35 mJ @ 175°C), but body diode VF is higher (1.75 V) and recovery is less soft. Better for hard-switched converters; less suitable for ZVS inductive cooking due to higher diode reverse recovery charge (Qrr = 1200 nC vs. IHY20N120R3's ~850 nC). Prefer when minimizing turn-off loss dominates over diode softness - e.g., in fixed-frequency PWM-based heaters without resonant tuning.

Compared with IXGN20N120B3 and STGW20H120DF2, IHY20N120R3XKSA1 uniquely balances low VCE(sat), soft diode recovery, and thermal ruggedness - making it the optimal choice for resonant inductive cooking where ZVS margin, EMI, and thermal density are co-constrained.

Availability

IHY20N120R3XKSA1 is available at Aetrix Electronics and suitable for induction cooktop inverters, industrial induction heaters, tankless water heaters, and wireless power transfer transmitters requiring stable component supply across multi-year production programs.

Supply support for IHY20N120R3XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global manufacturing and R&D infrastructure.

This device belongs to Infineon's IH-series RC-IGBT product line, engineered specifically for high-frequency resonant power conversion in consumer and industrial induction heating applications.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies 15 Ω as the reference gate resistor for switching characterization. Using >22 Ω increases turn-off delay and energy loss significantly - especially above 100°C - and risks incomplete turn-off during short-circuit events. For 20–50 kHz operation, 10–15 Ω is optimal to balance EMI and loss.

Can IHY20N120R3XKSA1 replace a standard IGBT + external diode pair?

Yes - its monolithic body diode replaces discrete ultrafast diodes in half-bridge legs. However, layout must account for shared emitter node: the internal diode shares the same emitter terminal, so Kelvin emitter sensing requires separate sense traces from the main emitter pad.

Is the TO-247HC package pin-compatible with standard TO-247?

Yes - mechanical footprint and pin assignment (C-G-E) match standard TO-247-3. The HC variant adds thicker molding compound and extended creepage paths but retains identical mounting hole spacing and screw torque specification (0.6 Nm for M3).

What is the safe operating area (SOA) limitation at 175°C junction temperature?

At Tj = 175°C, the DC SOA is limited to 60 A at VCE ≤ 1200 V, with pulse width dependence shown in Figure 2. For 100 µs pulses, maximum current drops to ~45 A; for 1 ms, it falls to ~12 A - confirming strict adherence to the published FBSOA curves is required for reliability.

IHY20N120R3XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TrenchStop®
Package/Case:
TO-247-3 Variant
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
Trench
Voltage - Collector Emitter Breakdown (Max):
1200 V
Current - Collector (Ic) (Max):
40 A
Current - Collector Pulsed (Icm):
60 A
Vce(on) (Max) @ Vge, Ic:
1.7V @ 15V, 20A
Power - Max:
310 W
Switching Energy:
950µJ (off)
Input Type:
Standard
Gate Charge:
211 nC
Td (on/off) @ 25°C:
-/387ns
Test Condition:
600V, 20A, 15Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247HC-3

IHY20N120R3XKSA1 FAQ

1.How can I place an order for IHY20N120R3XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IHY20N120R3XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IHY20N120R3XKSA1 reliable?

The price and inventory of IHY20N120R3XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IHY20N120R3XKSA1 is usually 5 days.

3.What payment methods are accepted for IHY20N120R3XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IHY20N120R3XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IHY20N120R3XKSA1?

IHY20N120R3XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IHY20N120R3XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IHY20N120R3XKSA1?

For technical support, including IHY20N120R3XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IHY20N120R3XKSA1 requirements.

6.How does Aetrix verify that IHY20N120R3XKSA1 is sourced from the original manufacturer or authorized distributors?

All IHY20N120R3XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IHY20N120R3XKSA1 meets industry standards.

7.What is the process for return or replacement of IHY20N120R3XKSA1?

All IHY20N120R3XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IHY20N120R3XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IHY20N120R3XKSA1 part is unused and in its original packaging.

Return procedure for IHY20N120R3XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IHY20N120R3XKSA1 Tags

  • IHY20N120R3XKSA1
  • IHY20N120R3XKSA1 PDF
  • IHY20N120R3XKSA1 Datasheet
  • IHY20N120R3XKSA1 Specifications
  • IHY20N120R3XKSA1 Images
  • Infineon Technologies
  • Infineon Technologies IHY20N120R3XKSA1
  • Buy IHY20N120R3XKSA1
  • IHY20N120R3XKSA1 Price
  • IHY20N120R3XKSA1 Distributor
  • IHY20N120R3XKSA1 Supplier
  • IHY20N120R3XKSA1 Wholesale
Related Products
STGD3NB60SDT4
STGD3NB60SDT4

STMicroelectronics

HGTD1N120BNS9A
HGTD1N120BNS9A

onsemi

STGF7NB60SL
STGF7NB60SL

STMicroelectronics

FGD5T120SH
FGD5T120SH

onsemi

STGB3NC120HDT4
STGB3NC120HDT4

STMicroelectronics

IKP20N60TXKSA1
IKP20N60TXKSA1

Infineon Technologies

STGW30H60DFB
STGW30H60DFB

STMicroelectronics

STGB30M65DF2
STGB30M65DF2

STMicroelectronics

IKB20N60TATMA1
IKB20N60TATMA1

Infineon Technologies

STGB30V60DF
STGB30V60DF

STMicroelectronics

IKW30N60DTPXKSA1
IKW30N60DTPXKSA1

Infineon Technologies

ISL9V3040P3
ISL9V3040P3

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER