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Infineon Technologies IHY30N160R2XKSA1

Part No.:
IHY30N160R2XKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3 Variant
Datasheet:
AetrixIHY30N160R2XKSA1.pdf
Description:
IGBT 1600V 30A 312W TO247HC-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,275

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Product details

Overview

IHY30N160R2 from Infineon is a 1600 V, 30 A TrenchStop® Reverse Conducting IGBT with monolithic body diode in TO-247HC package, designed for soft-switching topologies in high-voltage resonant converters. It delivers 1.8 V VCE(sat) at 25°C, 175°C maximum junction temperature, and integrated diode clamping for negative voltage protection in inductive cooking and UPS systems.

For engineers reviewing the IHY30N160R2 datasheet, IHY30N160R2 pinout, IHY30N160R2 application, or IHY30N160R2 equivalent, key selection criteria include its 1600 V blocking capability, low 1.65 V diode forward voltage at 30 A, tight parameter distribution from trench/fieldstop technology, and JEDEC-qualified ruggedness for 175°C operation in hard-switched and resonant power stages.

Technical Context

This RC-IGBT integrates an optimized fast-recovery body diode on the same die, enabling bidirectional current handling without external antiparallel diodes. Its NPT structure provides a positive temperature coefficient for VCE(sat), ensuring stable parallel operation under thermal stress.

The device uses TrenchStop® and fieldstop technologies to achieve low switching losses (Eoff = 4.37 mJ at 175°C), high ruggedness in SOA, and reduced EMI-critical for ZVS/ZCS resonant converters operating up to 100 kHz in induction heating and industrial SMPS.

Key Specifications

ParameterValue and Actual Design Meaning
VCE1600 V - supports DC-link voltages up to 1100 V in resonant converters with 50% safety margin
IC30 A continuous - rated for sustained conduction at 100°C case temperature in TO-247HC package
VCE(sat)1.8 V @ Tj=25°C - enables low conduction loss in high-efficiency soft-switching inverters
VF1.65 V @ IF=30 A, Tj=25°C - monolithic diode reduces layout complexity and reverse recovery charge
RthJC0.48 K/W - allows 312 W total power dissipation at 25°C case temperature
Eoff4.37 mJ @ Tj=175°C - quantifies turn-off energy under worst-case thermal conditions for thermal design
QG94 nC - determines gate driver strength requirement for 10 Ω external resistor and 15 V drive

Pinout & Package

Package: PG-TO247HC-3 - enhanced creepage and clearance vs. standard TO-247, qualified per JEDEC J-STD-020 for reflow and JESD-022 for reliability.

Pin/TerminalCircuit RoleDesign Meaning
Collector (C)Main high-side current pathConnected to DC-link positive; handles full load current and 1600 V blocking
Gate (G)Control inputDrives IGBT turn-on/off; requires ±20 V rating and 94 nC charge for full switching
Emitter (E)Reference node for both IGBT and diodeCommon return for main current and gate drive reference; internal emitter inductance = 13 nH

Key Features

FeatureDesign Value
Monolithic body diodeEliminates need for discrete antiparallel diode, reducing PCB area and parasitic inductance in resonant tank layouts
TrenchStop® + FieldstopEnables tight VCE(sat) distribution (±0.15 V) and stable SOA across temperature for reliable parallel operation
NPT structureProvides positive VCE(sat) temperature coefficient, preventing current hogging when paralleling multiple devices
TO-247HC packageIncreases air/creepage distance to meet IEC 61800-5-1 requirements for 1600 V systems in industrial drives

Applications

Induction CooktopsUninterruptible Power Supplies

Use Scenario: Resonant half-bridge inverter driving 20–50 kHz LC tank for precise pan detection and power control.

IC Role / Device Role / Timing Role: RC-IGBT serves as bidirectional switch with integrated diode conducting freewheeling current during zero-voltage switching transitions.

Use Value: Monolithic diode clamps negative VCE spikes during dead-time, eliminating snubber losses and improving efficiency by >2% over discrete IGBT+diode solutions.

Use Scenario: High-efficiency online double-conversion UPS with 400 V DC bus and 1600 V IGBT-based inverter stage.

IC Role / Device Role / Timing Role: Acts as main power switch in phase-leg configuration, handling 30 A RMS output current with soft-switching control.

Use Value: 175°C Tj,max and 0.48 K/W RthJC support compact heatsink design while maintaining 98.2% peak efficiency at full load.

Industrial Motor DrivesHigh-Voltage DC-DC Converters

Use Scenario: 3-phase inverter for 15–30 kW servo drives requiring high dv/dt immunity and short-circuit robustness.

IC Role / Device Role / Timing Role: IGBT operates in hard-switched PWM mode with active short-circuit protection enabled via gate monitoring.

Use Value: Turn-off safe operating area supports 90 A pulsed current at VCE ≤ 1600 V, enabling 2× overload capability for 10 s without desaturation fault.

Use Scenario: Isolated bidirectional DC-DC converter for EV charging infrastructure with 800 V battery interface.

IC Role / Device Role / Timing Role: Functions as synchronous rectifier and switch in dual-active-bridge topology with ZVS at 100 kHz.

Use Value: Low 58.7 pF Crss minimizes Miller-induced false turn-on, enabling reliable 15 V gate drive without negative voltage clamp.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RC-IGBT applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IXYS IXGN30N1601600 V, 30 A; higher VF = 2.1 V; no monolithic diode - requires external ultrafast diodeHigher layout complexity and reverse recovery noise in resonant convertersPreferred where discrete diode selection offers better customization of recovery characteristics
STMicroelectronics STGW30H160DF1600 V, 30 A; VCE(sat) = 1.95 V; lower Eoff = 3.8 mJ but only rated to 150°C TjLimited thermal headroom in high-ambient industrial environmentsSuitable for space-constrained designs where peak junction temperature stays below 150°C

Compared with IXGN30N160 and STGW30H160DF, IHY30N160R2 uniquely combines monolithic diode integration, 175°C rating, and fieldstop-enhanced ruggedness-making it optimal for thermally demanding soft-switching applications where layout simplicity and thermal margin are critical.

Availability

IHY30N160R2 is available at Aetrix Electronics and suitable for induction cooking systems, uninterruptible power supplies, and industrial motor drives requiring stable component supply and long-term lifecycle support.

Supply support for IHY30N160R2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The TrenchStop® Soft Switching Series targets high-frequency resonant converters, emphasizing low Eoff, integrated diode functionality, and rugged SOA for induction heating, UPS, and high-voltage DC-DC applications.

FAQ

What is the maximum gate-emitter voltage rating for IHY30N160R2?

The absolute maximum DC gate-emitter voltage is ±20 V; transient rating is ±25 V for pulses under 10 µs with duty cycle < 0.01. Exceeding ±20 V continuously risks gate oxide degradation, and the device's integrated gate resistor (RG,int) is not specified-external gate resistance must be selected based on QG = 94 nC and desired switching speed.

Does IHY30N160R2 require a negative gate voltage for reliable turn-off?

No, IHY30N160R2 does not require negative gate voltage for turn-off under normal operation. Its VGE(th) range (5.1–6.4 V) and low IGES (<100 nA) allow clean turn-off with 0 V gate bias. However, applying –5 V to –10 V improves noise immunity in high-dv/dt environments like induction cooktops with shared ground planes.

How does the monolithic body diode differ from a discrete antiparallel diode in layout?

The monolithic diode shares the same silicon die and emitter terminal with the IGBT, eliminating bond wire inductance and thermal mismatch. This reduces reverse recovery oscillation amplitude by ~40% and enables tighter gate loop layout-critical for minimizing EMI in 20–100 kHz resonant inverters where discrete diode placement introduces >5 nH stray inductance.

Can IHY30N160R2 be paralleled with other units for higher current capacity?

Yes, IHY30N160R2 supports paralleling due to its NPT structure and positive VCE(sat) temperature coefficient, which ensures current sharing stability across temperature. Successful paralleling requires matched gate drive impedance (≤5% variation), symmetrical PCB layout, and thermal coupling via shared heatsink-verified in Infineon's AN2015-05 application note for 3-unit configurations.

IHY30N160R2XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TrenchStop®
Package/Case:
TO-247-3 Variant
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
1600 V
Current - Collector (Ic) (Max):
60 A
Current - Collector Pulsed (Icm):
90 A
Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 30A
Power - Max:
312 W
Switching Energy:
2.53mJ
Input Type:
Standard
Gate Charge:
94 nC
Td (on/off) @ 25°C:
-/525ns
Test Condition:
600V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247HC-3

IHY30N160R2XKSA1 FAQ

1.How can I place an order for IHY30N160R2XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IHY30N160R2XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IHY30N160R2XKSA1 reliable?

The price and inventory of IHY30N160R2XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IHY30N160R2XKSA1 is usually 5 days.

3.What payment methods are accepted for IHY30N160R2XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IHY30N160R2XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IHY30N160R2XKSA1?

IHY30N160R2XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IHY30N160R2XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IHY30N160R2XKSA1?

For technical support, including IHY30N160R2XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IHY30N160R2XKSA1 requirements.

6.How does Aetrix verify that IHY30N160R2XKSA1 is sourced from the original manufacturer or authorized distributors?

All IHY30N160R2XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IHY30N160R2XKSA1 meets industry standards.

7.What is the process for return or replacement of IHY30N160R2XKSA1?

All IHY30N160R2XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IHY30N160R2XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IHY30N160R2XKSA1 part is unused and in its original packaging.

Return procedure for IHY30N160R2XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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