Infineon Technologies IKA15N65F5XKSA1

Overview

IKA15N65F5XKSA1 from Infineon is a 650V, 15A high-speed TRENCHSTOP™ 5 IGBT copacked with a RAPID 1 fast/soft antiparallel diode in a PG-TO220-3 FP package. It delivers 1.6 V V_CE(sat) at 15 A and 25°C, 17 ns turn-on delay, 150 ns turn-off delay, and operates up to 175°C junction temperature. It targets hard-switching and resonant topologies in solar converters and UPS systems.

For engineers reviewing the IKA15N65F5XKSA1 datasheet, IKA15N65F5XKSA1 pinout, IKA15N65F5XKSA1 application, or IKA15N65F5XKSA1 equivalent, key selection criteria include V_CE(sat) stability over temperature, low Q_G (38 nC), fast diode recovery (trr ≤ 50 ns at 25°C), and thermal resistance R_th(j–c) = 4.5 K/W for IGBT and 5.6 K/W for diode.

Technical Context

This DuoPack device integrates a fifth-generation trench-gate field-stop IGBT and a monolithic RAPID 1 diode in a single TO-220FP housing. The IGBT uses optimized carrier lifetime control for low conduction and switching losses simultaneously, while the diode features soft reverse recovery with <190 A/µs peak di/dt and <0.19 µC Q_rr at 7.5 A.

It supports hard-switching operation up to 40 kHz and resonant topologies (e.g., LLC) with minimal tail current and EMI due to controlled fall time (16 ns typical) and low output capacitance (C_oes = 24 pF). Gate drive requires ±20 V steady-state and ±30 V transient compliance, with V_GE(th) tightly specified at 3.2–4.8 V.

Key Specifications

Pinout & Package

PG-TO220-3 FP package: insulated plastic case with 3 leads, creepage/clearance compliant for industrial isolation requirements. Mounting screw M3, torque 0.6 Nm. Case is electrically isolated from collector terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT + diode DuoPack applications.

Compared with IKB15N65F5XKSA1 and IKP15N65F5XKSA1, the IKA15N65F5XKSA1 uniquely balances isolation compliance, thermal capability, and board-space efficiency-making it optimal for certified solar inverters and UL-listed UPS modules where both safety and thermal headroom matter.

Availability

IKA15N65F5XKSA1 is available at Aetrix Electronics and suitable for solar converters, uninterruptible power supplies, and welding converters requiring stable component supply, JEDEC-qualified reliability, and RoHS-compliant manufacturing.

Supply support for IKA15N65F5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This part belongs to Infineon's TRENCHSTOP™ 5 High-Speed Switching series, engineered specifically for efficiency-critical 1–5 kW power conversion systems operating above 16 kHz with stringent thermal and EMI constraints.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG(on) = RG(off) = 39 Ω for test conditions yielding 150 ns td(off) and 16 ns tf. For 20 kHz operation with 15 A load, a 22–33 Ω gate resistor maintains safe dv/dt (<10 V/ns) and avoids oscillation while keeping E_on below 0.15 mJ. Lower values increase switching speed but risk gate ringing if layout inductance exceeds 10 nH.

Can this IGBT be used in parallel configurations?

Yes-its positive V_CE(sat) temperature coefficient (1.90 V at 175°C) enables current sharing across paralleled devices. However, matched gate drive paths, symmetrical PCB layout, and individual emitter resistors (0.1 Ω) are required. Derate total current by 15% versus single-device rating to ensure thermal balance.

Is the integrated diode suitable for synchronous rectification?

No-the RAPID 1 diode is optimized for antiparallel freewheeling, not unidirectional conduction. Its forward voltage (1.45 V at 9 A) and soft recovery are not designed for low-loss synchronous rectifier operation. Use discrete SiC Schottky diodes or MOSFETs for that function.

Does this part require negative gate voltage for turn-off?

No-turn-off is fully functional with 0 V gate drive. However, applying –5 V to –10 V improves noise immunity and reduces Miller-induced false turn-on in high-dv/dt environments (e.g., multi-kW inverters). The absolute maximum negative V_GE is –20 V; sustained –15 V is acceptable per JEDEC stress testing.