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Infineon Technologies IKB03N120H2ATMA1
- Part No.:
- IKB03N120H2ATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IKB03N120H2ATMA1.pdf
- Description:
- IGBT 1200V 9.6A 62.5W TO263-3
- Quantity:
- Payment:
- Shipping:
Inventory:6,376
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Product details
Overview
IKB03N120H2ATMA1 from Infineon is a 1200V, 3A high-speed IGBT with integrated anti-parallel Emitter Controlled HE diode in PG-TO263-3-2 package. It delivers 0.15mJ turn-off energy at Tj = 25°C, 2.2V VCE(sat) at 3A/25°C, and 42ns trr for resonant switching in frequency inverters used in washing machines, fans, pumps, and vacuum cleaners.
For engineers reviewing the IKB03N120H2ATMA1 datasheet, IKB03N120H2ATMA1 pinout, IKB03N120H2ATMA1 application, or IKB03N120H2ATMA1 equivalent, key selection criteria include its 2nd-generation HighSpeed-2 technology, tight parameter distribution, parallel-switching capability, temperature-stable VCE(sat), and Eoff optimization for IC = 3A in hard- and soft-switching topologies.
Technical Context
This IGBT employs Infineon's HighSpeed-2 process with emitter-controlled diode integration, enabling soft, fast recovery (trr = 42ns @ 25°C; 125ns @ 150°C) and reduced switching losses in resonant circuits. Its gate threshold voltage (2.1–3.9V) and low input capacitance (205pF) support stable drive under varying junction temperatures.
The device features optimized dynamic characteristics: 281ns turn-off delay and 29ns fall time at 25°C, with Eoff rising to 0.26mJ at 150°C - reflecting predictable thermal degradation. Thermal resistance from junction-to-case is 2.0K/W (IGBT) and 3.2K/W (diode), supporting high-power density in compact inverter modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE | 1200V maximum blocking voltage - supports DC-link operation up to 800V bus in industrial inverters with margin. |
| IC | 3A continuous collector current at TC = 100°C - defines usable RMS current in PWM-driven motor drives. |
| Eoff | 0.15mJ at Tj = 25°C, 800V, 3A - enables efficient hard-switching below 140kHz and ZVS-compatible soft-switching. |
| VCE(sat) | 2.2V typ. at IC = 3A, Tj = 25°C - determines conduction loss and heatsink sizing in 1200V systems. |
| trr | 42ns diode reverse recovery time at Tj = 25°C - minimizes commutation stress and EMI in bridge-leg configurations. |
| RthJC | 2.0K/W junction-to-case thermal resistance - allows direct mounting to heatsinks with predictable thermal rise under 3A load. |
| Qg | 22nC total gate charge - sets minimum gate driver peak current (≥270mA for 82Ω RG) and drive power budget. |
Pinout & Package
IKB03N120H2ATMA1 uses the PG-TO263-3-2 surface-mount package with isolated collector tab, optimized for automated assembly and thermal performance on FR4 PCBs with ≥6cm² copper area.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Collector (C) | Main power output terminal | Exposed metal tab connected to internal IGBT/diode cathodes - must be soldered to large copper pour for thermal and electrical integrity. |
| Gate (G) | Control input | High-impedance MOS gate requiring <100nA leakage drive; sensitive to ESD and layout-induced ringing. |
| Emitter (E) | Power return and reference node | Shared emitter for IGBT and anti-parallel diode - forms critical current-sense and gate-drive reference path in half-bridge layouts. |
Key Features
| Feature | Design Value |
|---|---|
| 2nd-generation HighSpeed-2 technology | Reduces switching losses by >20% vs. prior gen at same VCE/IC, enabling higher-frequency inverters without sacrificing efficiency. |
| Integrated Emitter Controlled HE diode | Soft, fast recovery (trr = 42ns) with low Qrr (0.23µC) - suppresses voltage overshoot and reduces snubber requirements in bridge legs. |
| Parallel switching capability | Tight parameter distribution (VGE(th): 2.1–3.9V; VCE(sat): 2.2–2.8V) enables current sharing across multiple devices without external balancing. |
| Junction temperature range | –40°C to +150°C operation - supports sealed, fanless enclosures in home appliance motor drives with ambient up to 70°C. |
| Pb-free, RoHS-compliant plating | Meets J-STD-020 MSL1 reflow profile (260°C peak) - ensures compatibility with lead-free SMT lines and long-term reliability. |
Applications
| Washing Machine Inverter | Fan Motor Drive |
|---|---|
Use Scenario: Variable-speed drive for drum motor using 3-phase inverter with space-constrained PCB layout. IC Role / Device Role / Timing Role: Half-bridge switch in 3-phase leg; handles 800V DC-link, 3A RMS, 140kHz PWM with soft-recovery diode commutation. Use Value: Enables compact heatsink design via 2.0K/W RthJC and reduces audible noise through low EMI from controlled diode recovery. |
Use Scenario: Compact blower control in HVAC and kitchen exhaust systems requiring silent, energy-efficient operation. IC Role / Device Role / Timing Role: Single-phase inverter switch driving PSC or shaded-pole motor; operates at 20–50kHz with burst-mode modulation. Use Value: Delivers 0.15mJ Eoff at 25°C and stable VCE(sat) over temperature - minimizing thermal derating and simplifying thermal management. |
| Pump Speed Controller | Vacuum Cleaner Motor Driver |
Use Scenario: Brushless DC pump for water circulation in dishwashers and condensing boilers with IPX4-rated enclosure. IC Role / Device Role / Timing Role: High-side switch in half-bridge topology; withstands 1200V transients during load dump and recovers cleanly from inductive flyback. Use Value: Integrated HE diode eliminates need for external ultrafast diode, reducing BOM count and PCB footprint by >30%. |
Use Scenario: High-RPM universal motor controller in cordless vacuum cleaners with battery-powered 24–48V input and 800V boost stage. IC Role / Device Role / Timing Role: Boost switch in resonant LLC or ZVS topology; leverages 0.05mJ Eoff in ZVT mode at 25°C for >95% efficiency. Use Value: Optimized Eoff at low IC (1A) and high dv/dt (3000V/µs) extends battery runtime and reduces heat generation in sealed housing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT-inverter applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IKP03N120H2 | Same die, TO-220 package with non-isolated collector; RthJC = 2.2K/W; no surface-mount capability. | Requires mechanical isolation kit for heatsink mounting; unsuitable for automated SMT assembly. | Select when manual assembly, lower cost, or legacy TO-220 footprint is required. |
| IKB10N120CH2 | 10A rating, same 1200V/HighSpeed-2 process; Eoff = 0.42mJ @ 3A; larger die size increases gate charge (Qg = 45nC). | Higher current headroom but demands stronger gate driver (≥550mA peak) and larger PCB copper area. | Select when future-proofing for 6–8A loads or paralleling is planned; avoid if 3A rating suffices. |
Compared with IKB03N120H2ATMA1, IKP03N120H2 trades SMT compatibility for simpler thermal interface, while IKB10N120CH2 provides scalable current handling at the cost of increased drive complexity and board area - making the original optimal for cost- and space-constrained 3A inverter designs.
Availability
IKB03N120H2ATMA1 is available at Aetrix Electronics and suitable for washing machine inverters, fan motor drives, pump controllers, and vacuum cleaner motor drivers requiring stable component supply, JEDEC2-qualified reliability, and RoHS-compliant manufacturing.
Supply support for IKB03N120H2ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and consumer markets.
IKB03N120H2ATMA1 belongs to Infineon's HighSpeed-2 IGBT product line, designed specifically for energy-efficient, compact frequency inverters in white goods and small appliances operating up to 150°C junction temperature.
FAQ
What is the maximum recommended gate resistor value for reliable switching?
The datasheet specifies RG = 82Ω for characterization at 3A/800V. For safe operation, RG must limit peak gate current to ≤300mA during 15V transitions and maintain Miller plateau voltage above VGE(th) under worst-case dV/dt. Values above 150Ω risk slow turn-on and shoot-through in half-bridge configurations.
Can IKB03N120H2ATMA1 be used in zero-voltage switching (ZVS) topologies?
Yes - its 0.05mJ Eoff at 25°C in ZVT test conditions (Cr = 4nF) confirms suitability for resonant LLC and phase-shifted full-bridge converters. The integrated HE diode's soft recovery minimizes voltage spikes during ZVS transitions, reducing snubber losses.
Is the PG-TO263-3-2 package electrically isolated?
No - the collector tab is electrically connected to the internal IGBT and diode dies. The package provides thermal isolation only; system-level insulation must be achieved via PCB layout (creepage/clearance), heatsink isolation, or external insulating pads per IEC 60335-1 requirements.
How does junction temperature affect turn-off energy?
Eoff increases from 0.15mJ at 25°C to 0.26mJ at 150°C under identical test conditions (800V, 3A, RG = 82Ω). This 73% rise reflects increased carrier lifetime and tail current - requiring thermal-aware gate drive tuning or derating in high-ambient environments.
IKB03N120H2ATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- IGBT Type:
- -
- Voltage - Collector Emitter Breakdown (Max):
- 1200 V
- Current - Collector (Ic) (Max):
- 9.6 A
- Current - Collector Pulsed (Icm):
- 9.9 A
- Vce(on) (Max) @ Vge, Ic:
- 2.8V @ 15V, 3A
- Power - Max:
- 62.5 W
- Switching Energy:
- 290µJ
- Input Type:
- Standard
- Gate Charge:
- 22 nC
- Td (on/off) @ 25°C:
- 9.2ns/281ns
- Test Condition:
- 800V, 3A, 82Ohm, 15V
- Reverse Recovery Time (trr):
- 42 ns
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-3-2
IKB03N120H2ATMA1 FAQ
1.How can I place an order for IKB03N120H2ATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IKB03N120H2ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IKB03N120H2ATMA1 reliable?
The price and inventory of IKB03N120H2ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKB03N120H2ATMA1 is usually 5 days.
3.What payment methods are accepted for IKB03N120H2ATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKB03N120H2ATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IKB03N120H2ATMA1?
IKB03N120H2ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IKB03N120H2ATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IKB03N120H2ATMA1?
For technical support, including IKB03N120H2ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKB03N120H2ATMA1 requirements.
6.How does Aetrix verify that IKB03N120H2ATMA1 is sourced from the original manufacturer or authorized distributors?
All IKB03N120H2ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKB03N120H2ATMA1 meets industry standards.
7.What is the process for return or replacement of IKB03N120H2ATMA1?
All IKB03N120H2ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKB03N120H2ATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IKB03N120H2ATMA1 part is unused and in its original packaging.
Return procedure for IKB03N120H2ATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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