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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKB15N65EH5ATMA1

Name: IKB15N65EH5ATMA1
Brand: Infineon Technologies
SKU: IKB15N65EH5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKB15N65EH5ATMA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IKB15N65EH5ATMA1.pdf

Description:: IGBT TRENCH FS 650V 30A TO263-3

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Product details

Overview

IKB15N65EH5ATMA1 from Infineon is a 650 V, 15 A TRENCHSTOP™ 5 high-speed IGBT with integrated full-rated RAPID 1 anti-parallel diode in PG-TO263-3 package, optimized for hard-switching and resonant topologies in solar inverters and industrial SMPS. It delivers 1.65 V V_CE(sat) at 25°C, 175°C max junction temperature, and 38 nC total gate charge.

For engineers reviewing the IKB15N65EH5ATMA1 datasheet, IKB15N65EH5ATMA1 pinout, IKB15N65EH5ATMA1 application, or IKB15N65EH5ATMA1 equivalent, key selection criteria include switching energy (0.21–0.63 mJ), diode reverse recovery performance (Q_rr = 0.30–0.92 µC), thermal resistance (R_th(j-c) = 1.40 K/W), and gate drive robustness (±20 V continuous, ±30 V transient).

Technical Context

This IGBT employs Infineon's 5th-generation TRENCHSTOP™ trench-gate field-stop structure, enabling low conduction loss while maintaining fast turn-off. Its co-packaged RAPID 1 diode features soft recovery with controlled dI_rr/dt (−400 to −600 A/µs) and low Q_rr, minimizing voltage overshoot and EMI in bridge configurations.

The device operates across −40°C to +175°C junction range and supports gate drive with 15 V nominal V_GE, leveraging a 4.0 V typical V_GE(th) for noise-immune turn-on. Dynamic parameters are characterized under standardized inductive-load conditions (V_CC = 400 V, R_G = 39 Ω, L_σ = 30 nH), ensuring reproducible switching behavior in real-world power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE Rating	650 V - Supports DC bus voltages up to 400 V in single-phase inverters and 600 V in three-phase rectified inputs with margin.
I_C Continuous (T_c = 100°C)	18.0 A - Sustains rated output current in compact heatsink designs without derating below 100°C case temperature.
V_CE(sat) @ 15 A, 25°C	1.65 V - Enables <1.5 W conduction loss per device at 15 A, critical for efficiency in 1–3 kW converters.
Q_G	38.0 nC - Determines gate driver power requirement and enables <15 ns turn-on delay with moderate R_G.
E_off @ 15 A, 25°C	0.08 mJ - Low turn-off loss supports >50 kHz switching in ZVS/ZCS topologies without excessive thermal stress.
R_th(j-c)	1.40 K/W - Allows direct mounting to PCB copper or heatsink with predictable thermal drop for junction temperature monitoring.
trr (diode)	54–100 ns - Short, soft recovery minimizes commutation losses and reduces snubber sizing in half-bridge legs.

Pinout & Package

PG-TO263-3 (D²PAK) package with isolated collector tab, standard 3-pin layout for surface-mount assembly and thermal interface to heatsink or copper pour.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Collector (C)	Electrically connected to exposed metal tab; primary thermal path and high-current return node in half-bridge configuration.
Pin 2	Emitter (E)	Low-side reference for gate drive; carries full load current and diode forward/reverse recovery current.
Pin 3	Gate (G)	High-impedance control input requiring <38 nC charge; sensitive to ringing-requires local 39 Ω gate resistor per datasheet test conditions.

Key Features

Feature	Design Value
Co-packaged RAPID 1 diode	Full 15 A rated anti-parallel diode with soft recovery (Q_rr = 0.30 µC @ 7.5 A) eliminates need for external diode and reduces layout parasitics.
TRENCHSTOP™ 5 technology	Optimized trench geometry achieves best-in-class trade-off between V_CE(sat) (1.65 V) and E_off (0.08 mJ), enabling higher efficiency at 20–100 kHz.
175°C maximum junction temperature	Enables operation in high-ambient environments (e.g., enclosed solar inverters) and extends lifetime via reduced thermal cycling stress.
Pb-free, RoHS-compliant plating	Meets industrial and renewable energy compliance requirements; qualified per JEDEC JESD22-A108 for moisture sensitivity level 1 (MSL1).

Applications

Solar String Inverter

Industrial SMPS

Use Scenario: DC–AC conversion stage in 2–5 kW photovoltaic string inverters operating at 16–20 kHz with unipolar PWM.

IC Role / Device Role / Timing Role: High-side IGBT switch in H-bridge leg, paired with complementary low-side device; handles bidirectional current during freewheeling via integrated diode.

Use Value: Low E_ts (0.21 mJ @ 7.5 A) and soft diode recovery reduce heatsink size by ~25% versus prior-gen IGBTs at same power density.

Use Scenario: Primary-side switching in 3 kW telecom rectifiers and server PSUs using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS)-assisted main switch; leverages low C_res (4 pF) and fast t_d(off) (145 ns) for precise dead-time control.

Use Value: 1.40 K/W R_th(j-c) enables direct copper-clad PCB mounting without mechanical fasteners, simplifying thermal design and reducing BOM count.

Welding Power Supply

Energy Storage Inverter

Use Scenario: Inverter stage of IGBT-based arc welding machines delivering pulsed 200–300 A output at 1–5 kHz.

IC Role / Device Role / Timing Role: Hard-switched output switch handling high di/dt (≥600 A/µs); relies on low LE (7.0 nH) and controlled Irrm (10–13.5 A) for stable arc initiation.

Use Value: Diode peak reverse recovery current (Irrm = 10.0 A @ 25°C) limits voltage spike across snubber, enabling 600 V bus rating with 100 V margin.

Use Scenario: Bi-directional DC–AC conversion in residential battery storage systems (5–10 kWh) with grid-tie and off-grid modes.

IC Role / Device Role / Timing Role: Half-bridge switch in dual-active-bridge (DAB) or three-phase inverter; conducts both charging (rectifier) and discharging (inverter) current via integrated diode.

Use Value: 175°C T_vjmax supports derated operation during extended overloads (e.g., generator start-up), improving system reliability without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKB20N65EH5	Higher I_C rating (20 A), identical V_CE, V_CE(sat), and package; Q_G = 48 nC, E_off = 0.10 mJ @ 20 A.	Supports higher continuous current in same footprint; requires stronger gate driver due to higher Q_G.	Select when system peak current exceeds 15 A but board space prohibits larger package.
FGH40N60UFD	600 V rating, 40 A I_C, TO-247 package; higher V_CE(sat) (1.8 V), slower t_d(off) (200 ns), no co-packaged diode.	Requires external diode; suited for lower-frequency (<20 kHz), higher-power (≥5 kW) applications with larger heatsinks.	Choose only if higher voltage margin is unnecessary and discrete diode integration is acceptable for cost optimization.

Compared with IKB20N65EH5, the IKB15N65EH5ATMA1 offers lower gate drive demand and tighter thermal management in space-constrained 2–3 kW designs; versus FGH40N60UFD, it provides superior high-frequency efficiency and simplified layout via monolithic diode integration, despite lower voltage rating.

Availability

IKB15N65EH5ATMA1 is available at Aetrix Electronics and suitable for solar string inverters, industrial SMPS, welding power supplies, and energy storage inverters requiring stable component supply and long-term industrial qualification.

Supply support for IKB15N65EH5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

The TRENCHSTOP™ 5 series targets high-efficiency, high-reliability industrial power conversion, specifically engineered for solar, UPS, welding, and energy storage applications demanding low-loss switching and rugged thermal performance.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies R_G = 39 Ω for characterization, and recommends keeping R_G(on) ≤ 47 Ω and R_G(off) ≤ 33 Ω to maintain t_d(off) < 160 ns and avoid excessive E_off rise. Higher values increase switching loss and risk shoot-through in bridge configurations due to slowed turn-off.

Can this IGBT be used in parallel configurations?

Yes-its positive V_CE(sat) temperature coefficient (1.95 V @ 125°C, 2.10 V @ 175°C) ensures current sharing stability. Parallel operation requires matched gate drive paths, symmetrical layout, and individual gate resistors; Infineon confirms suitability for up to two devices in parallel per leg.

Is the integrated diode rated for continuous conduction mode (CCM) operation?

Yes-the RAPID 1 diode is fully rated for 15 A continuous forward current at T_c = 100°C (IF = 21.0 A), with soft recovery characteristics validated for CCM in PFC and inverter freewheeling paths. Its Q_rr and trr are specified across 7.5–15 A, confirming robustness in high-duty-cycle applications.

Does this part require negative gate voltage for safe turn-off?

No-turn-off is reliably achieved with 0 V gate drive (V_GE = 0 V), as confirmed by dynamic test conditions in the datasheet. However, applying −5 V to −8 V improves noise immunity and reduces Miller-induced false turn-on in high-dV/dt environments like motor drives or multi-level inverters.

IKB15N65EH5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™ 5

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 30 A

Current - Collector Pulsed (Icm):: 45 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 15A

Power - Max:: 105 W

Switching Energy:: 400µJ (on), 80µJ (off)

Input Type:: Standard

Gate Charge:: 38 nC

Td (on/off) @ 25°C:: 16ns/145ns

Test Condition:: 400V, 15A, 39Ohm, 15V

Reverse Recovery Time (trr):: 70 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IKB15N65EH5ATMA1 FAQ

1.How can I place an order for IKB15N65EH5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKB15N65EH5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKB15N65EH5ATMA1 reliable?

The price and inventory of IKB15N65EH5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKB15N65EH5ATMA1 is usually 5 days.

3.What payment methods are accepted for IKB15N65EH5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKB15N65EH5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKB15N65EH5ATMA1?

IKB15N65EH5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKB15N65EH5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKB15N65EH5ATMA1?

For technical support, including IKB15N65EH5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKB15N65EH5ATMA1 requirements.

6.How does Aetrix verify that IKB15N65EH5ATMA1 is sourced from the original manufacturer or authorized distributors?

All IKB15N65EH5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKB15N65EH5ATMA1 meets industry standards.

7.What is the process for return or replacement of IKB15N65EH5ATMA1?

All IKB15N65EH5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKB15N65EH5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKB15N65EH5ATMA1 part is unused and in its original packaging.

Return procedure for IKB15N65EH5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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