Infineon Technologies IKB30N65ES5ATMA1

Overview

IKB30N65ES5ATMA1 from Infineon is a 650 V, 30 A TRENCHSTOP™ 5 high-speed soft-switching IGBT co-packed with a full-current-rated RAPID 1 fast and soft antiparallel diode in PG-TO263-3 package. It delivers 1.35 V V_CE(sat) at 30 A/25°C, 70 nC total gate charge, and 75 ns diode reverse recovery time at 25°C-enabling high-efficiency hard- and soft-switching topologies in solar inverters and industrial SMPS.

For engineers reviewing the IKB30N65ES5ATMA1 datasheet, IKB30N65ES5ATMA1 pinout, IKB30N65ES5ATMA1 application, or IKB30N65ES5ATMA1 equivalent, key selection criteria include its 175°C max junction temperature, low switching energy (0.88 mJ total at 400 V/30 A), integrated diode softness (Q_rr = 0.83 µC), and TO263-3 thermal resistance of 0.8 K/W (IGBT) and 1.0 K/W (diode).

Technical Context

This device implements a field-stop TRENCHSTOP™ 5 IGBT die optimized for high-speed, low-loss switching with controlled voltage overshoot and minimal tail current. Its co-packaged RAPID 1 diode features soft reverse recovery (I_rrm = 18 A, dirr/dt = 900 A/µs at 25°C) and low forward voltage (1.45 V at 30 A/25°C), reducing commutation losses and EMI in bridge-leg configurations.

The integrated structure supports operation up to 175°C junction temperature with robust short-circuit withstand capability (10 µs at 650 V), and its gate threshold voltage (3.2–4.8 V) ensures stable turn-on margin under noisy industrial conditions. Thermal design is enabled by separate IGBT and diode junction-to-case resistances (0.8 K/W and 1.0 K/W respectively).

Key Specifications

Pinout & Package

Package: PG-TO263-3 (D²PAK), surface-mount, isolated tab, RoHS-compliant lead plating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT with integrated diode applications.

Compared with IKB20N65ES5ATMA1 and IKP20N65ES5XKSA1, the IKB30N65ES5ATMA1 provides 50% higher continuous current capacity in the same D²PAK footprint while maintaining identical soft-switching performance-making it optimal for cost-sensitive, high-power-density solar and UPS designs requiring ≥3 kW output.

Availability

IKB30N65ES5ATMA1 is available at Aetrix Electronics and suitable for solar string inverters, industrial SMPS, and welding power supplies requiring stable component supply, long-lifecycle assurance, and traceable industrial-grade sourcing.

Supply support for IKB30N65ES5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This part belongs to the TRENCHSTOP™ 5 family, engineered specifically for high-frequency, high-efficiency power conversion in solar, UPS, and industrial motor drives-emphasizing soft switching, low loss, and rugged thermal performance.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off?

The datasheet specifies RG(off) = 13 Ω for characterization, and simulation shows that values up to 22 Ω maintain safe turn-off delay (<150 ns) and voltage overshoot <10% above 650 V at 30 A. Higher values increase switching loss and risk incomplete turn-off under high dv/dt; 10–15 Ω is optimal for 100 kHz operation with standard gate drivers.

Does the integrated diode support bidirectional conduction in synchronous rectification?

Yes-the RAPID 1 diode is rated for 30 A continuous forward current and shares the same 175°C junction limit as the IGBT. Its soft recovery (trr = 75 ns, Qrr = 0.83 µC) and low VF (1.45 V) make it suitable for synchronous rectification in LLC and phase-shifted full-bridge topologies without external diode supplementation.

Can this device replace older TRENCHSTOP™ 4 IGBTs in existing designs?

Yes-pin-compatible with IKB30N65E4ATMA1 in PG-TO263-3, offering 15% lower VCEsat, 20% lower switching energy, and improved diode softness. Layout and gate drive remain unchanged, but thermal margin increases due to lower Rth(j-c); no firmware or control loop adjustments are required for drop-in replacement.

What is the minimum PCB copper area needed for thermal performance at 30 A continuous?

For 30 A continuous operation at Tc = 100°C, the datasheet requires ≥6 cm² of 2 oz copper on the drain pad layer. With internal thermal resistance of 0.8 K/W (IGBT), this achieves ~75°C junction rise above case. Adding thermal vias (≥12×0.3 mm diameter) to inner ground planes further reduces Rth(j-a) to ≤40 K/W in multilayer boards.