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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKB40N65EH5ATMA1

Name: IKB40N65EH5ATMA1
Brand: Infineon Technologies
SKU: IKB40N65EH5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKB40N65EH5ATMA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IKB40N65EH5ATMA1.pdf

Description:: IGBT TRENCH FS 650V 74A TO263-3

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Product details

Overview

IKB40N65EH5ATMA1 from Infineon is a 650 V, 40 A TRENCHSTOP™ 5 high-speed IGBT with integrated full-rated RAPID 1 anti-parallel diode in PG-TO263-3 package, designed for hard-switching and resonant topologies in solar inverters and industrial SMPS. It delivers 1.65 V V_CE(sat) at 40 A and 25°C, 95 nC total gate charge, and operates up to 175°C junction temperature.

For engineers reviewing the IKB40N65EH5ATMA1 datasheet, IKB40N65EH5ATMA1 pinout, IKB40N65EH5ATMA1 application, or IKB40N65EH5ATMA1 equivalent, key selection criteria include switching energy (E_on/E_off = 1.10/0.40 mJ @ 40 A), diode reverse recovery (Q_rr = 1.00 µC), thermal resistance (R_th(j-c) = 0.60 K/W), and gate drive compatibility (V_GE(th) = 4.0 V typ).

Technical Context

This IGBT employs Infineon's 5th-generation TRENCHSTOP™ H5 technology, featuring optimized trench cell design and field-stop layer for reduced conduction and switching losses. Its co-packaged RAPID 1 diode enables fast, soft reverse recovery with low Q_rr and controlled dI_rr/dt (–1500 A/µs).

The device supports high-frequency operation in bridge-leg configurations due to low C_ies (2500 pF), C_res (9 pF), and internal emitter inductance (7.0 nH). Gate threshold voltage (3.2–4.8 V) and transconductance (50 S typ.) ensure robust turn-on margin and linear current control across –40°C to 175°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - Withstands DC bus voltages up to 650 V in solar string inverters and industrial UPS systems.
I_C	40 A continuous - Rated collector current at T_c = 25°C, supporting 3–5 kW power stages.
V_CE(sat)	1.65 V @ 40 A, 25°C - Low saturation voltage minimizes conduction loss and heatsink requirements.
Q_G	95 nC - Enables efficient gate driving with moderate 15 Ω external gate resistor in typical half-bridge layouts.
E_off	0.40 mJ @ 40 A - Low turn-off energy reduces switching loss in 16–100 kHz hard-switched converters.
T_vj(max)	175°C - Supports high ambient operation in enclosed industrial power supplies and welding equipment.
R_th(j-c)	0.60 K/W - Enables thermal design with ≤125 W dissipation at 100°C case temperature.

Pinout & Package

PG-TO263-3 (D²PAK) surface-mount package with isolated tab; pin 1 = Gate, pin 2 = Collector, pin 3 = Emitter. The insulated metal tab provides direct thermal path to PCB copper while electrically isolating the collector.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Controls IGBT conduction; requires 15 V drive for full enhancement and 0 V for safe turn-off.
Pin 2 (C)	Collector terminal	High-side switch node; connected to DC bus; electrically tied to metal tab (isolated).
Pin 3 (E)	Emitter terminal	Low-side reference for gate drive and current sensing; shared cathode connection for integrated diode.

Key Features

Feature	Design Value
Co-packaged RAPID 1 diode	Full 40 A rated anti-parallel diode with 78 ns trr and 1.00 µC Qrr-eliminates need for external diode in bidirectional current paths.
H5 trench technology	Optimized cell pitch and field-stop doping-achieves best-in-class trade-off between V_CE(sat) and E_off for 650 V class.
Low internal emitter inductance	7.0 nH-reduces voltage overshoot during turn-off and improves paralleling stability in multi-device modules.
Pb-free RoHS-compliant plating	Meets JEDEC J-STD-020 MSL1 reflow profile (260°C peak)-enables lead-free assembly without reliability compromise.

Applications

Solar String Inverter

Industrial SMPS

Use Scenario: Three-phase inverter stage converting DC from PV strings to grid-synchronized AC at 16–30 kHz.

IC Role / Device Role / Timing Role: High-side IGBT switch in NPC or T-type topology; handles 40 A RMS output current with synchronized diode freewheeling.

Use Value: Low E_off (0.40 mJ) and soft diode recovery reduce EMI and snubber losses, enabling >98.5% system efficiency.

Use Scenario: Primary-side switch in 3–5 kW telecom rectifier or server PSU operating at 50–100 kHz.

IC Role / Device Role / Timing Role: Hard-switched main switch in phase-shifted full-bridge; conducts 40 A peak with 157 ns t_d(off).

Use Value: 1.65 V V_CE(sat) and 0.60 K/W R_th(j-c) allow compact heatsink design and stable operation at 100°C case temperature.

Welding Power Supply

Energy Storage Inverter

Use Scenario: Output chopper in IGBT-based inverter welder delivering pulsed 100–200 A load current.

IC Role / Device Role / Timing Role: Fast-turning IGBT handling repetitive 160 A pulsed current (I_Cpuls) with <1 µs safe operating area compliance.

Use Value: 175°C max junction rating and 160 A pulsed rating support high-duty-cycle thermal cycling without derating.

Use Scenario: Bi-directional DC-AC converter in residential battery storage system (400–600 V DC bus).

IC Role / Device Role / Timing Role: Half-bridge leg switch managing regenerative braking and grid export; relies on integrated diode for reverse current path.

Use Value: RAPID 1 diode's 1.00 µC Q_rr and –1500 A/µs dI_rr/dt minimize voltage spikes during bi-directional transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed 650 V IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKB30N65EH5ATMA1	30 A rated current, lower E_on (0.85 mJ), same V_CE(sat) and package	Lower power density; suitable for ≤2.5 kW designs with tighter thermal constraints	Select when system peak current stays below 30 A and board space limits heat spreading capability.
IKP40N65ES5	Same 40 A/650 V rating but slower E5 technology; higher V_CE(sat) (1.75 V) and E_off (0.55 mJ)	Targeted at cost-sensitive industrial motor drives-not optimized for high-frequency SMPS or solar	Choose only if switching frequency is ≤16 kHz and efficiency targets are relaxed by ≥0.3%.

Compared with IKB30N65EH5ATMA1 and IKP40N65ES5, the IKB40N65EH5ATMA1 uniquely balances 40 A current handling, 0.40 mJ E_off, and integrated RAPID 1 diode-making it optimal for high-efficiency, high-frequency solar and SMPS where both conduction and switching losses must be minimized simultaneously.

Availability

IKB40N65EH5ATMA1 is available at Aetrix Electronics and suitable for solar string inverters, industrial SMPS, welding power supplies, and energy storage inverters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IKB40N65EH5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

The TRENCHSTOP™ 5 series was engineered specifically for high-efficiency, high-frequency industrial and renewable energy conversion-emphasizing low-loss switching, rugged diode integration, and extended temperature operation.

FAQ

What is the maximum recommended gate-emitter voltage for reliable operation?

The absolute maximum transient gate-emitter voltage is ±30 V for pulses ≤10 µs (duty cycle <1%). For continuous operation, Infineon specifies ±20 V. Exceeding ±20 V risks oxide degradation over time, especially at elevated temperatures. Recommended gate drive uses +15 V for turn-on and –5 to –8 V for active Miller clamping or fast turn-off.

Can IKB40N65EH5ATMA1 be paralleled for higher current capacity?

Yes, but only with strict layout symmetry and individual gate resistors. Its positive V_CE(sat) temperature coefficient (1.95 V @ 175°C) ensures current sharing, but mismatched parasitic inductance (>2 nH difference) or gate drive skew (>10 ns) causes dynamic imbalance. Use Kelvin emitter connections and low-inductance gate loops per device.

Does the integrated diode support reverse conduction during ZVS transitions?

Yes-the RAPID 1 diode is specifically characterized for zero-voltage switching (ZVS) in resonant topologies. At 40 A and 25°C, its trr of 78 ns and soft recovery waveform (low Irrm and controlled dirr/dt) minimize voltage overshoot and ringing during ZVS turn-on, enabling reliable operation in LLC and phase-shifted full-bridge converters.

What is the thermal resistance from junction to case under standard mounting conditions?

The specified R_th(j-c) is 0.60 K/W for the IGBT and 0.75 K/W for the diode, measured with 1.5 N·m screw torque, thermal interface material (TIM) applied, and 6 cm² copper pad on FR4 PCB. This value assumes full contact between the isolated metal tab and heatsink; incomplete coverage increases resistance by up to 30%.

IKB40N65EH5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™ 5

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 74 A

Current - Collector Pulsed (Icm):: 160 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 40A

Power - Max:: 250 W

Switching Energy:: 1.1mJ (on), 400µJ (off)

Input Type:: Standard

Gate Charge:: 95 nC

Td (on/off) @ 25°C:: 20ns/157ns

Test Condition:: 400V, 40A, 15Ohm, 15V

Reverse Recovery Time (trr):: 78 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IKB40N65EH5ATMA1 FAQ

1.How can I place an order for IKB40N65EH5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKB40N65EH5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKB40N65EH5ATMA1 reliable?

The price and inventory of IKB40N65EH5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKB40N65EH5ATMA1 is usually 5 days.

3.What payment methods are accepted for IKB40N65EH5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKB40N65EH5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKB40N65EH5ATMA1?

IKB40N65EH5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKB40N65EH5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKB40N65EH5ATMA1?

For technical support, including IKB40N65EH5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKB40N65EH5ATMA1 requirements.

6.How does Aetrix verify that IKB40N65EH5ATMA1 is sourced from the original manufacturer or authorized distributors?

All IKB40N65EH5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKB40N65EH5ATMA1 meets industry standards.

7.What is the process for return or replacement of IKB40N65EH5ATMA1?

All IKB40N65EH5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKB40N65EH5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKB40N65EH5ATMA1 part is unused and in its original packaging.

Return procedure for IKB40N65EH5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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