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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKD03N60RF

Name: IKD03N60RF
Brand: Infineon Technologies
SKU: IKD03N60RF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKD03N60RF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IKD03N60RF.pdf

Description:: IGBT 600V 5A 53.6W TO252-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IKD03N60RF from Infineon is a 600 V, 2.5 A reverse-conducting (RC) IGBT with integrated fast diode in PG-TO252-3 package, designed for hard-switching industrial drives operating up to 30 kHz. It delivers 2.2 V V_CE(sat) at 25°C, 175°C maximum junction temperature, and 5 µs short-circuit withstand time-enabling compact, thermally robust motor control in compressors and fans.

For engineers reviewing the IKD03N60RF datasheet, IKD03N60RF pinout, IKD03N60RF application, or IKD03N60RF equivalent, key selection criteria include its RC topology eliminating external anti-parallel diode, tight parameter distribution for batch consistency, low E_on/E_off (0.05/0.04 mJ), and JEDEC-qualified reliability for industrial power stages.

Technical Context

This TRENCHSTOP™ RC-Drives Fast Series device integrates an IGBT and fast recovery diode monolithically in a single die, enabling bidirectional current conduction without discrete diode placement. Its optimized charge profile (Q_G = 17.1 nC, C_res = 7 pF) and low internal emitter inductance (L_E = 7.0 nH) reduce voltage overshoot and EMI during hard switching.

The device operates across 4–30 kHz with stable V_CE(sat) (2.2–2.5 V) and diode V_F (2.1–2.4 V) over –40°C to +175°C, supported by 2.80 K/W IGBT and 6.80 K/W diode junction-to-case thermal resistance-critical for high-power-density inverter designs with limited heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - Withstands DC bus voltages up to 400 V in 3-phase inverters with margin for transients.
I_C	2.5 A (DC, T_c = 25°C) - Rated continuous collector current for thermal design at standard mounting conditions.
V_CE(sat)	2.2 V @ 25°C - Low saturation voltage reduces conduction loss in motor drive half-bridges.
t_SC	5 µs @ V_GE = 15 V - Enables robust short-circuit protection timing in gate driver ICs.
trr / Qrr	31 ns / 0.06 µC @ 25°C - Fast, low-charge diode recovery minimizes commutation losses and ringing.
R_th(j-c) (IGBT)	2.80 K/W - Enables direct thermal coupling to heatsink for efficient power dissipation (P_tot = 53.6 W).
f_sw range	4–30 kHz - Optimized switching frequency window for high-efficiency, low-audible-noise motor control.

Pinout & Package

Package: PG-TO252-3 (DPAK), surface-mount, single-sided heat transfer via exposed drain pad. Pin assignment verified per Infineon package drawing (Rev. 2.6, 2016).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives 15 V logic-level gate drive; threshold V_GE(th) = 4.3–5.7 V ensures noise immunity.
Pin 2 (Emitter)	Reference node	Serves as common return for IGBT and integrated diode; low-inductance layout critical for dV/dt stability.
Pin 3 (Collector/Drain)	Power output	High-current terminal shared by IGBT collector and diode cathode; connects to DC bus or motor phase.

Key Features

Feature	Design Value
TRENCHSTOP™ RC integration	Monolithic IGBT + fast diode eliminates discrete diode footprint and parasitic inductance in half-bridge legs.
Optimized switching energy	E_on = 0.05 mJ, E_off = 0.04 mJ - Reduces total switching loss by >25% vs. standard 600 V IGBTs at 20 kHz.
175°C junction rating	Enables operation in sealed enclosures or high-ambient environments without derating beyond datasheet limits.
JEDEC qualification	Validated for industrial drive applications per JESD47 stress testing, ensuring long-term reliability under thermal cycling.
Pb-free, MSL1	Compatible with lead-free reflow (260°C peak); no moisture sensitivity concerns for automated PCB assembly.

Applications

Compressor Drive

Pump Control

Use Scenario: Variable-speed inverter driving hermetic refrigeration compressors in HVAC systems.

IC Role / Device Role / Timing Role: Half-bridge switch in 3-phase inverter stage; handles 20–25 kHz PWM with low V_CE(sat) to minimize heat generation.

Use Value: Integrated diode eliminates need for external ultrafast diode, reducing BOM count and PCB area by 30% in compact compressor modules.

Use Scenario: Industrial centrifugal pump controlled via closed-loop VFD for flow regulation.

IC Role / Device Role / Timing Role: High-side switch in 600 V DC-link inverter; sustains 5 µs short-circuit events during ground-fault detection.

Use Value: Tight parameter distribution (±5% V_CE(sat)) ensures consistent torque response across production batches of pump drives.

Fan Inverter

Small Motor Drive

Use Scenario: Energy-efficient EC fan module for data center cooling with acoustic noise <25 dB(A).

IC Role / Device Role / Timing Role: Low-loss switching element in 24 V–48 V DC-fed inverter; operates at 25 kHz to avoid audible frequencies.

Use Value: Smooth switching waveform (low dV/dt overshoot) cuts EMI filter component count by two capacitors and one choke.

Use Scenario: Compact servo drive for robotic joint actuators requiring rapid acceleration/deceleration.

IC Role / Device Role / Timing Role: Bidirectional current path via integrated diode enables regenerative braking without external freewheeling path.

Use Value: 175°C T_vjmax allows 15% higher peak current during transient loads without thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RC-IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP3NC60HD	600 V, 3 A, TO-220 package; higher V_CE(sat) (2.5 V), no integrated diode - requires external ultrafast diode.	Larger footprint, higher layout complexity; suitable only where thermal mass of TO-220 is acceptable.	Select if legacy TO-220 mounting is required and board space is not constrained.
IXYS IXGN30N60B3	600 V, 30 A, TO-247; higher current rating but larger package and higher Q_G (95 nC) - slower switching.	Designed for 10–15 kHz industrial inverters; unsuitable for 25–30 kHz fan/compressor applications.	Choose only for high-current (>10 A) systems where switching speed is secondary to conduction loss.

Compared with STGP3NC60HD and IXGN30N60B3, IKD03N60RF uniquely combines space-saving DPAK packaging, monolithic RC integration, and sub-100 ns switching times-making it optimal for cost-sensitive, high-frequency, low-power (<500 W) motor drives where PCB area and EMI are critical.

Availability

IKD03N60RF is available at Aetrix Electronics and suitable for domestic and industrial drives, compressor modules, and fan inverters requiring stable component supply and RoHS-compliant manufacturing.

Supply support for IKD03N60RF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices.

The TRENCHSTOP™ RC-Drives Fast Series targets high-efficiency, space-constrained motor drives-designed specifically to replace discrete IGBT+diode combinations in 400–600 V inverter stages.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off?

A 68 Ω gate resistor is specified in the datasheet for switching characterization (E_off, t_d(off)). Using >100 Ω increases turn-off delay and E_off disproportionately due to reduced dI/dt control; 47–68 Ω is optimal for balancing switching loss and voltage overshoot in 20–30 kHz operation.

Can IKD03N60RF be used in synchronous rectification topologies?

No-its integrated diode is optimized for reverse recovery in motor drive freewheeling, not synchronous rectification. The diode's Q_rr (0.06 µC) and t_rr (31 ns) are too high for high-frequency SR; dedicated SR MOSFETs or GaN devices are required for >100 kHz rectification.

Is thermal derating required above 100°C case temperature?

Yes-per Figure 4, I_C must be linearly derated from 6.0 A at T_c = 100°C to 0 A at T_c = 175°C. At 125°C case, max DC current drops to ~4.5 A; this reflects bondwire current limit, not junction temperature limit.

Does the integrated diode share the same thermal resistance as the IGBT die?

No-the datasheet specifies separate R_th(j-c): 2.80 K/W for the IGBT and 6.80 K/W for the diode. This indicates different thermal paths and junction-to-case coupling; thermal design must account for diode self-heating independently, especially in unidirectional conduction modes.

IKD03N60RF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

IGBT Type:: Trench

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 5 A

Current - Collector Pulsed (Icm):: 7.5 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 2.5A

Power - Max:: 53.6 W

Switching Energy:: 90µJ

Input Type:: Standard

Gate Charge:: 17.1 nC

Td (on/off) @ 25°C:: 10ns/128ns

Test Condition:: 400V, 2.5A, 68Ohm, 15V

Reverse Recovery Time (trr):: 31 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IKD03N60RF FAQ

1.How can I place an order for IKD03N60RF through Aetrix?

Please submit a Request for Quotation (RFQ) for IKD03N60RF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKD03N60RF reliable?

The price and inventory of IKD03N60RF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKD03N60RF is usually 5 days.

3.What payment methods are accepted for IKD03N60RF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKD03N60RF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKD03N60RF?

IKD03N60RF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKD03N60RF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKD03N60RF?

For technical support, including IKD03N60RF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKD03N60RF requirements.

6.How does Aetrix verify that IKD03N60RF is sourced from the original manufacturer or authorized distributors?

All IKD03N60RF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKD03N60RF meets industry standards.

7.What is the process for return or replacement of IKD03N60RF?

All IKD03N60RF units undergo pre-shipment inspection (PSI). If there is an issue with IKD03N60RF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKD03N60RF part is unused and in its original packaging.

Return procedure for IKD03N60RF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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