Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKD03N60RFAATMA1

Name: IKD03N60RFAATMA1
Brand: Infineon Technologies
SKU: IKD03N60RFAATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IKD03N60RFAATMA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IKD03N60RFAATMA1.pdf

Description:: IGBT 600V 5A 53.6W TO252-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,022

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IKD03N60RFAATMA1 from Infineon is a 600V reverse-conducting (RC) IGBT with monolithically integrated fast diode in PG-TO252-3 package, designed for hard-switching industrial drives up to 30 kHz. It delivers 2.5 A continuous collector current at TC = 100°C, 2.2 V VCEsat at 25°C, 175°C max junction temperature, and 5 µs short-circuit withstand time.

For engineers reviewing the IKD03N60RFAATMA1 datasheet, IKD03N60RFAATMA1 pinout, IKD03N60RFAATMA1 application, or IKD03N60RFAATMA1 equivalent, key selection criteria include its RC topology enabling compact half-bridge layouts, low Qrr (0.06 µC typ. at 25°C), tight parameter distribution, and AEC-Q101 qualification for automotive lighting and piezo injection systems.

Technical Context

This RC-IGBT integrates a fast recovery diode in the same die, eliminating external anti-parallel diode placement and reducing layout parasitics. Its TRENCHSTOP™ RC architecture optimizes Eon (0.05 mJ), Eoff (0.04 mJ), and Qrr simultaneously for high-efficiency 4–30 kHz switching in space-constrained inverters.

The device operates with ±20 V gate-emitter voltage rating, exhibits 4.3–5.7 V VGE(th), and maintains stable VCEsat (2.2–2.5 V across –40 to 175°C). Thermal resistance Rth(j-c) is 2.80 K/W for the IGBT section and 6.80 K/W for the integrated diode-critical for thermal design in TO252-mounted motor control PCBs.

Key Specifications

Parameter	Value and Actual Design Meaning
VCE	600 V - Maximum blocking voltage for 400 V DC-link inverters with 20% margin
IC (TC = 100°C)	2.5 A - Continuous output current capability under typical heatsink conditions
VCEsat (Tvj = 25°C)	2.2 V - Low conduction loss enabling >97% efficiency in 2.5 A, 400 V hard-switched stages
Qrr (Tvj = 25°C)	0.06 µC - Minimizes diode turn-off loss and dv/dt-induced shoot-through risk
tSC	5 µs - Enables robust overcurrent protection without desaturation circuitry in <1 ms fault windows
Rth(j-c) IGBT	2.80 K/W - Allows direct thermal coupling to copper pads for ≤53.6 W power dissipation at TC = 25°C
trr (Tvj = 25°C)	31 ns - Fast diode recovery supports clean commutation in resonant and phase-shifted topologies

Pinout & Package

IKD03N60RFAATMA1 uses the PG-TO252-3 (DPAK) surface-mount package with exposed drain pad for thermal enhancement. Pin assignment follows standard DPAK orientation: Pin 1 = Gate, Pin 2 = Collector (tab), Pin 3 = Emitter.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Controls IGBT conduction; requires 15 V drive for full saturation; ±20 V absolute max rating
Pin 2 (C)	Collector terminal (exposed tab)	High-side switch node; electrically connected to thermal pad; must be isolated from heatsink unless floating
Pin 3 (E)	Emitter terminal	Common reference for gate drive and load return; integrated diode anode connects internally to this pin

Key Features

Feature	Design Value
Reverse-Conducting (RC) integration	Monolithic diode eliminates discrete anti-parallel placement, reducing PCB area by ≥30% in half-bridge modules
Optimized switching energy	Eon + Eoff = 0.09 mJ at 25°C enables 30 kHz operation with <1.5 W switching loss at 2.5 A/400 V
AEC-Q101 qualification	Validated for automotive-grade reliability including temperature cycling, HTRB, and UHAST-suitable for HID ballasts
Tight parameter distribution	VGE(th) spread of 4.3–5.7 V and VCEsat variation <±5% reduce gate drive design margin requirements
175°C maximum junction temperature	Enables operation in sealed enclosures or high-ambient environments without derating below 100°C case temp

Applications

Small Industrial Drives

Piezo Fuel Injector Drivers

Use Scenario: 200–500 W variable-speed motor control in HVAC blowers and pump inverters.

IC Role / Device Role / Timing Role: Half-bridge high-side switch with integrated freewheeling path for PWM-controlled 3-phase bridge legs.

Use Value: RC topology reduces component count and layout area while maintaining <31 ns trr for clean zero-voltage switching transitions.

Use Scenario: High-precision, high-frequency actuation of diesel piezo injectors requiring sub-microsecond timing control.

IC Role / Device Role / Timing Role: Fast-switching unidirectional power stage delivering 2.5 A peak current pulses at 10–25 kHz.

Use Value: 5 µs short-circuit rating and 0.06 µC Qrr ensure precise pulse edge fidelity and minimal tail current during injector deactivation.

Automotive HID Lighting

Compact UPS Inverters

Use Scenario: Ballast circuits for xenon headlamps requiring 400 V DC-link switching and arc stabilization.

IC Role / Device Role / Timing Role: Primary switching element in resonant half-bridge topology with integrated diode handling lamp ignition current reversal.

Use Value: AEC-Q101 qualification and 175°C TJmax support under-hood mounting; low EMI due to smooth switching waveforms.

Use Scenario: 300–600 VA line-interactive UPS inverters where board space and thermal management are critical.

IC Role / Device Role / Timing Role: Output stage switch in push-pull or half-bridge configuration driving transformer-coupled DC-AC conversion.

Use Value: PG-TO252-3 footprint enables double-sided PCB assembly; 2.80 K/W Rth(j-c) allows passive cooling at ≤2.5 A continuous load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RC-IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKD04N60RF	Higher IC (3.0 A @ TC=100°C); identical VCEsat (2.2 V), but 0.11 mJ total switching energy	Better suited for 300–700 W drives needing higher current headroom; larger die increases thermal mass	Select when system requires ≥3 A continuous output and can accommodate slightly higher switching loss
IRG7PH42UD1	600 V, 2.6 A, but non-RC structure requiring external diode; 2.4 V VCEsat; 0.13 mJ Ets	Requires additional SMD diode and layout area; lacks AEC-Q101 qualification	Choose only if cost sensitivity outweighs board space constraints and automotive compliance is not required

Compared with IKD03N60RFAATMA1, IKD04N60RF offers higher current capacity at modest switching loss trade-off, while IRG7PH42UD1 sacrifices integration and qualification for legacy compatibility-making the IKD03N60RFAATMA1 optimal for space-limited, automotive-qualified, 2.5 A hard-switching designs.

Availability

IKD03N60RFAATMA1 is available at Aetrix Electronics and suitable for small industrial drives, piezo fuel injection systems, automotive HID lighting ballasts, and compact UPS inverters requiring stable component supply and long-term lifecycle assurance.

Supply support for IKD03N60RFAATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive microcontrollers, and security solutions, with global manufacturing and R&D infrastructure.

The TRENCHSTOP™ RC-Drives Fast Series targets high-frequency industrial and automotive power conversion, emphasizing integration, thermal efficiency, and ruggedness for compact inverter designs operating up to 30 kHz.

FAQ

What is the gate drive requirement for reliable switching of IKD03N60RFAATMA1?

The device requires a minimum VGE of 15 V for full saturation, with recommended gate resistor values of 68 Ω for both turn-on and turn-off to achieve balanced td(on)/td(off) and minimize ringing. Gate drive must sustain ±20 V absolute maximum rating and deliver ≥100 mA peak current to charge the 17.1 nC QG within nanosecond-scale timing windows.

Can IKD03N60RFAATMA1 replace a discrete IGBT + diode pair in existing designs?

Yes-it replaces a typical 600 V, 2.5 A IGBT and fast recovery diode in half-bridge configurations. The integrated diode shares the emitter terminal (Pin 3), so PCB layout must route the diode return path through the same net. No changes to gate drive or snubber networks are needed, but thermal pad soldering must meet Infineon's PG-TO252-3 footprint specification.

How does the integrated diode performance compare to external ultrafast diodes?

At 2.5 A and 25°C, the integrated diode achieves trr = 31 ns and Qrr = 0.06 µC-comparable to discrete 600 V, 3 A ultrafast diodes like BYV26E. Its monolithic coupling ensures matched thermal behavior and eliminates bond-wire inductance, reducing voltage overshoot during recovery by up to 15% in identical test circuits.

Is IKD03N60RFAATMA1 suitable for use in synchronous rectification topologies?

No-it is not designed for synchronous rectification. The integrated diode is optimized for freewheeling and reverse conduction in hard-switched IGBT applications, not bidirectional MOSFET-like conduction. Its VCEsat and Qrr are not specified for body-diode replacement in LLC or SR flyback topologies, and no reverse-biased safe operating area is characterized.

IKD03N60RFAATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

IGBT Type:: Trench

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 5 A

Current - Collector Pulsed (Icm):: 7.5 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 2.5A

Power - Max:: 53.6 W

Switching Energy:: 50µJ (on), 40µJ (off)

Input Type:: Standard

Gate Charge:: 17.1 nC

Td (on/off) @ 25°C:: 10ns/128ns

Test Condition:: 400V, 2.5A, 68Ohm, 15V

Reverse Recovery Time (trr):: 31 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IKD03N60RFAATMA1 FAQ

1.How can I place an order for IKD03N60RFAATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKD03N60RFAATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKD03N60RFAATMA1 reliable?

The price and inventory of IKD03N60RFAATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKD03N60RFAATMA1 is usually 5 days.

3.What payment methods are accepted for IKD03N60RFAATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKD03N60RFAATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKD03N60RFAATMA1?

IKD03N60RFAATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKD03N60RFAATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKD03N60RFAATMA1?

For technical support, including IKD03N60RFAATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKD03N60RFAATMA1 requirements.

6.How does Aetrix verify that IKD03N60RFAATMA1 is sourced from the original manufacturer or authorized distributors?

All IKD03N60RFAATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKD03N60RFAATMA1 meets industry standards.

7.What is the process for return or replacement of IKD03N60RFAATMA1?

All IKD03N60RFAATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKD03N60RFAATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKD03N60RFAATMA1 part is unused and in its original packaging.

Return procedure for IKD03N60RFAATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…