Infineon Technologies IKD04N60RAATMA1

Overview

IKD04N60RAATMA1 from Infineon is a 600V reverse-conducting (RC) IGBT with monolithically integrated fast recovery diode in PG-TO252-3 package, designed for hard-switching industrial power converters. It delivers 4A DC collector current at TC = 100°C, 1.65V VCEsat at 25°C, 1.70V VF (diode), and supports 1–20 kHz switching with 5 µs short-circuit withstand time up to 175°C junction temperature - used in HID lighting ballasts and piezo fuel injectors.

For engineers reviewing the IKD04N60RAATMA1 datasheet, IKD04N60RAATMA1 pinout, IKD04N60RAATMA1 application, or IKD04N60RAATMA1 equivalent, key selection criteria include its integrated diode topology, tight parameter distribution, AEC-Q101 qualification, low EMI switching behavior, and thermal resistance of 2.0 K/W (IGBT) and 4.5 K/W (diode).

Technical Context

This RC-IGBT integrates a fast-recovery diode on the same die as the IGBT, eliminating external anti-parallel diode placement and reducing PCB layout parasitics. Its TRENCHSTOP™ RC architecture enables simultaneous optimization of conduction loss (VCEsat/VF) and switching performance (Eon/Eoff, trr = 43 ns @ 25°C).

The device operates reliably across -40°C to +175°C junction range with defined SOA up to 12 A pulsed current and 600 V blocking capability. Gate threshold voltage (4.3–5.7 V) and transconductance (2.2 S typ.) support robust gate drive design in hard-switching topologies like half-bridge inverters and resonant converters.

Key Specifications

Pinout & Package

IKD04N60RAATMA1 is housed in PG-TO252-3 (DPAK) package with exposed drain pad for thermal enhancement. The three terminals are arranged in standard DPAK footprint: Gate (G), Collector (C), and Emitter (E). Pin 1 = Gate, Pin 2 = Collector, Pin 3 = Emitter.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RC-IGBT applications.

Compared with IKD04N60RAATMA1, IKD04N65RF trades off conduction efficiency for voltage margin, while IKD10N60RA increases current capability at the cost of higher thermal resistance - both retain RC integration but differ in voltage-current-thermal operating envelopes.

Availability

IKD04N60RAATMA1 is available at Aetrix Electronics and suitable for HID lighting ballasts, piezo injector drivers, and industrial motor starters requiring stable component supply, AEC-Q101 compliance, and space-constrained TO252 layouts.

Supply support for IKD04N60RAATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IKD04N60RAATMA1 belongs to the TRENCHSTOP™ RC-Series, engineered specifically for hard-switching power conversion where integrated diode functionality, low EMI, and thermal robustness are essential.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies r_G = 43 Ω for characterization (Eon/Eoff, switching times). For hard-switching applications, values between 22 Ω and 68 Ω balance switching speed and gate oscillation risk. Lower values (<22 Ω) increase dI/dt stress; higher values (>100 Ω) extend td(off) beyond 200 ns and raise switching losses significantly.

Can IKD04N60RAATMA1 be used in parallel configurations?

Yes - its very tight parameter distribution (V_GE(th), V_CE(sat)) and matched dynamic characteristics enable stable current sharing. Use identical gate drive paths, symmetrical PCB layout, and individual gate resistors (±5% tolerance) to maintain thermal and electrical balance across paralleled units.

Is the integrated diode suitable for freewheeling in continuous conduction mode (CCM)?

Yes - the diode is rated for 8.0 A DC at T_C = 25°C and 4.0 A at T_C = 100°C, with 43 ns trr and 0.22 µC Qrr at 25°C. Its soft recovery behavior minimizes voltage overshoot during CCM freewheeling in buck-derived topologies and motor drives.

Does the PG-TO252-3 package require thermal vias under the drain pad?

Yes - the exposed drain pad is electrically connected to the collector and serves as primary thermal path. At least six 0.3 mm diameter thermal vias (filled or plated) connecting to ≥6 cm² internal or bottom-side copper are required to achieve the specified R_th(j-a) = 50 K/W and sustain 75 W P_tot at T_C = 25°C.