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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKD06N60RAATMA1

Name: IKD06N60RAATMA1
Brand: Infineon Technologies
SKU: IKD06N60RAATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKD06N60RAATMA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IKD06N60RAATMA1.pdf

Description:: IGBT TRENCH FS 600V 12A TO252-3

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Product details

Overview

IKD06N60RAATMA1 from Infineon is a 600V Reverse-Conducting (RC) IGBT with monolithically integrated fast recovery diode in PG-TO252-3 package, designed for hard-switching industrial power converters. It delivers 6A DC collector current at 175°C junction temperature, 1.65V V_CE(sat) at 25°C, and 1.70V diode forward voltage - enabling low conduction loss in HID lighting and piezo fuel injection drivers.

For engineers reviewing the IKD06N60RAATMA1 datasheet, IKD06N60RAATMA1 pinout, IKD06N60RAATMA1 application, or IKD06N60RAATMA1 equivalent, key selection criteria include its 5µs short-circuit withstand time, tight parameter distribution across temperature, AEC-Q101 qualification, and optimized EMI performance in 1–20 kHz switching range.

Technical Context

This RC-IGBT integrates the switching transistor and freewheeling diode on a single die using TRENCHSTOP™ technology, eliminating external diode placement and reducing layout parasitics. Its gate threshold voltage (4.3–5.7 V) and transconductance (3.4 S) support stable drive under varying thermal conditions.

The device operates with fixed 23 Ω gate resistor in reference test circuits, delivering 127 ns turn-off delay and 152 ns fall time at 25°C, while maintaining 0.33 mJ total switching energy at 400 V/6 A - balancing conduction and switching losses for medium-frequency hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - supports DC-link voltages up to 400 V in industrial inverters with margin for transient overvoltage.
I_C (T_vj = 175°C)	6.0 A - continuous current rating at maximum junction temperature, defining thermal design headroom.
V_CE(sat) (25°C)	1.65 V - low saturation voltage reduces conduction loss in high-duty-cycle applications like HID lamp ballasts.
V_F (25°C)	1.70 V - integrated diode forward voltage enables compact half-bridge designs without discrete diode footprint.
t_SC	5 µs - short-circuit withstand time allows robust protection coordination in motor drives and UPS systems.
R_th(j-c) (IGBT)	1.50 K/W - junction-to-case thermal resistance determines heatsink sizing for 100 W max power dissipation.
f_SW Range	1–20 kHz - optimized frequency window for hard-switched PFC, resonant converters, and piezo injector drivers.

Pinout & Package

IKD06N60RAATMA1 uses the PG-TO252-3 (DPAK) surface-mount package with exposed drain pad for thermal enhancement. Pin 1 = Gate, Pin 2 = Collector (tab), Pin 3 = Emitter.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Controls IGBT conduction; requires ≥15 V drive for full saturation and ≤±20 V absolute max rating.
Pin 2 (C)	Collector terminal (drain tab)	High-side power node; electrically connected to exposed metal tab for low-inductance, low-thermal-resistance mounting.
Pin 3 (E)	Emitter terminal	Common reference for gate drive and load return; forms source of integrated diode's cathode connection.

Key Features

Feature	Design Value
TRENCHSTOP™ RC integration	Single-die IGBT + fast diode eliminates interconnect inductance and PCB area vs. discrete pair.
Optimized V_CE(sat)/V_F trade-off	1.65 V / 1.70 V at 6 A enables <1.5 W conduction loss per device in 10 kHz HID lamp drivers.
5 µs short-circuit capability	Enables deterministic fault response in motor control without external desaturation detection circuitry.
AEC-Q101 qualified	Validated for automotive-grade reliability in piezo injector modules and industrial equipment with extended lifetime requirements.
MSL1 reflow compatibility	Rated for 260°C peak solder temperature, supporting automated SMT assembly without moisture sensitivity concerns.

Applications

HID Automotive Headlamp Ballast

Piezo Fuel Injector Driver

Use Scenario: High-intensity discharge lamp ignition and regulation in automotive headlamps requiring precise 1–5 kHz square-wave current control.

IC Role / Device Role / Timing Role: Half-bridge high-side switch with integrated freewheeling path, operating in hard-switched mode at 2.5 kHz.

Use Value: Low V_F and tight parameter distribution ensure consistent lamp brightness and lifetime across temperature and unit variance.

Use Scenario: Driving piezoelectric actuators in diesel common-rail injectors with sub-millisecond switching precision and high dv/dt immunity.

IC Role / Device Role / Timing Role: Low-inductance, high-di/dt capable switch in unidirectional boost or flyback topology, switching at 10–20 kHz.

Use Value: 5 µs short-circuit rating and 175°C operation allow direct integration into compact, oil-cooled injector control modules.

Industrial Induction Heater Half-Bridge

Uninterruptible Power Supply (UPS) Inverter Stage

Use Scenario: Medium-frequency (10–15 kHz) resonant inverter stage in 3–5 kW induction heating systems for metal processing.

IC Role / Device Role / Timing Role: Hard-switched IGBT in asymmetrical half-bridge configuration, handling 6 A RMS load current with 400 V DC bus.

Use Value: Optimized EMI behavior and smooth switching transitions reduce filter component count and EMI shielding cost.

Use Scenario: 1–5 kVA online UPS inverter output stage converting 400 V DC to 230 V AC with sinusoidal PWM at 4–8 kHz.

IC Role / Device Role / Timing Role: Low-loss switching element in full-bridge topology, leveraging integrated diode for bidirectional current handling during dead-time.

Use Value: 1.5 K/W R_th(j-c) and 100 W P_tot enable air-cooled thermal design without forced convection in compact rack-mount units.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RC-IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKD08N60RA	Higher 8 A I_C rating, identical 600 V V_CE, 1.60 V V_CE(sat) at 25°C, same PG-TO252-3 package.	Better suited for higher-current HID ballasts or larger piezo injectors where thermal margin is constrained.	Select when system peak current exceeds 6.5 A but board space prohibits TO-220 or TO-247 upgrades.
IKB15N60T	Standard 600 V IGBT (no integrated diode), TO-220 package, 15 A I_C, 1.55 V V_CE(sat), requires external diode.	Used in higher-power UPS inverters where discrete diode selection enables tailored reverse recovery optimization.	Choose when layout allows separate diode placement and >10 A continuous current is required with lower V_CE(sat).

Compared with IKD06N60RAATMA1, IKD08N60RA offers higher current headroom in identical footprint, while IKB15N60T trades integration for higher current and lower saturation voltage - making the former ideal for space-constrained upgrades and the latter for thermally demanding, higher-power designs.

Availability

IKD06N60RAATMA1 is available at Aetrix Electronics and suitable for HID lighting ballasts, piezo fuel injector drivers, and industrial induction heater inverters requiring stable component supply and long-term production continuity.

Supply support for IKD06N60RAATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The TRENCHSTOP™ RC-Series targets hard-switched industrial power conversion, combining IGBT and diode on one die to reduce system size, improve reliability, and simplify thermal design in 1–20 kHz applications.

FAQ

What is the maximum allowable gate-emitter voltage for IKD06N60RAATMA1?

The absolute maximum gate-emitter voltage is ±20 V, as specified in the datasheet's "Maximum ratings" table. Exceeding this limit risks permanent gate oxide damage. Recommended gate drive is 15 V for saturation and 0 V (or –5 V) for turn-off to ensure robust noise immunity and minimize Miller-induced false triggering.

Does IKD06N60RAATMA1 require an external freewheeling diode?

No - it integrates a fast-recovery diode monolithically, with 68 ns reverse recovery time and 0.37 µC Q_rr at 25°C. This eliminates the need for an external diode in half-bridge or inverter legs, reducing component count, PCB area, and parasitic inductance in the freewheeling path.

How does thermal resistance differ between the IGBT and diode sections?

The IGBT section has R_th(j-c) = 1.50 K/W, while the diode section is rated at 3.60 K/W. This reflects differing thermal paths due to device geometry and current density distribution - requiring thermal design to prioritize IGBT junction temperature, as the diode typically runs cooler under matched conduction conditions.

Is IKD06N60RAATMA1 suitable for use in automotive engine control units?

Yes - it is AEC-Q101 qualified and rated for –40°C to +175°C operation, making it suitable for under-hood automotive applications such as piezo injector drivers. Its 5 µs short-circuit capability and MSL1 reflow compatibility further support automotive manufacturing and field reliability requirements.

IKD06N60RAATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 12 A

Current - Collector Pulsed (Icm):: 18 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 6A

Power - Max:: 100 W

Switching Energy:: 110µJ (on), 220µJ (off)

Input Type:: Standard

Gate Charge:: 48 nC

Td (on/off) @ 25°C:: 12ns/127ns

Test Condition:: 400V, 6A, 23Ohm, 15V

Reverse Recovery Time (trr):: 68 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IKD06N60RAATMA1 FAQ

1.How can I place an order for IKD06N60RAATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKD06N60RAATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKD06N60RAATMA1 reliable?

The price and inventory of IKD06N60RAATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKD06N60RAATMA1 is usually 5 days.

3.What payment methods are accepted for IKD06N60RAATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKD06N60RAATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKD06N60RAATMA1?

IKD06N60RAATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKD06N60RAATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKD06N60RAATMA1?

For technical support, including IKD06N60RAATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKD06N60RAATMA1 requirements.

6.How does Aetrix verify that IKD06N60RAATMA1 is sourced from the original manufacturer or authorized distributors?

All IKD06N60RAATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKD06N60RAATMA1 meets industry standards.

7.What is the process for return or replacement of IKD06N60RAATMA1?

All IKD06N60RAATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKD06N60RAATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKD06N60RAATMA1 part is unused and in its original packaging.

Return procedure for IKD06N60RAATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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