Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IKD06N60RAATMA2

Part No.:
IKD06N60RAATMA2
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
-
Datasheet:
AetrixIKD06N60RAATMA2.pdf
Description:
IGBT
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:807

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IKD06N60RAATMA2 from Infineon is a 600V reverse-conducting (RC) IGBT with monolithically integrated fast recovery diode in PG-TO252-3 package, designed for hard-switching industrial power converters. It delivers 6A DC collector current at 100°C case temperature, 1.65V VCE(sat) at 25°C, 175°C max junction temperature, and 5µs short-circuit withstand time-enabling compact HID lighting ballasts and piezo fuel injector drivers.

For engineers reviewing the IKD06N60RAATMA2 datasheet, IKD06N60RAATMA2 pinout, IKD06N60RAATMA2 application, or IKD06N60RAATMA2 equivalent, key selection criteria include its integrated diode topology, tight parameter distribution across temperature, low EMI switching behavior, and AEC-Q101 qualification for automotive-adjacent industrial systems.

Technical Context

This TRENCHSTOP™ RC-Series device integrates an IGBT and anti-parallel diode on a single die, eliminating external diode placement and reducing PCB layout parasitics. Its optimized VCE(sat)/VF trade-off targets conduction loss minimization in 1–20 kHz hard-switching topologies like resonant half-bridges and phase-controlled rectifiers.

The device features 470 pF input capacitance (Cies) and 48 nC total gate charge (QG) under standard 480V/6A test conditions, supporting robust gate drive design with 23 Ω external resistor. Thermal resistance from junction-to-case is 1.50 K/W for the IGBT and 3.60 K/W for the integrated diode-critical for thermal co-design in space-constrained modules.

Key Specifications

Parameter Value and Actual Design Meaning
VCE 600 V - Maximum blocking voltage compatible with 400 V DC bus designs with 50% safety margin.
IC (TC = 100°C) 6.0 A - Continuous current rating at realistic heatsink temperature, defining usable output power in compact converters.
VCE(sat) (25°C) 1.65 V - Low saturation voltage directly reduces conduction loss and thermal stress in high-duty-cycle operation.
tSC 5 µs - Short-circuit withstand time enables reliable overcurrent protection without desaturation circuit complexity.
Rth(j-c) (IGBT) 1.50 K/W - Junction-to-case thermal resistance determines minimum heatsink size required for 100 W dissipation.
trr / Qrr 68 ns / 0.37 µC - Fast, low-charge diode recovery minimizes turn-on losses of complementary switch in bridge legs.
AEC-Q101 Qualified Yes - Validated reliability for automotive-grade stress testing, supporting industrial applications requiring long-term field stability.

Pinout & Package

Package: PG-TO252-3 (DPAK), surface-mount, single-sided cooling, MSL1 rated for 260°C reflow.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (G) Gate Control terminal for IGBT turn-on/turn-off; requires ≥15 V to fully enhance, threshold at 4.3–5.7 V.
Pin 2 (C) Collector Main high-side current path; connected to DC bus positive in half-bridge configurations.
Pin 3 (E) Emitter / Cathode Common emitter for IGBT and cathode for integrated diode; serves as power ground reference and current return path.

Key Features

Feature Design Value
Monolithic RC integration Single-die IGBT + fast diode eliminates discrete diode placement, reducing layout area by ~30% and parasitic inductance.
Optimized VCE(sat)/VF balance 1.65 V IGBT saturation + 1.70 V diode forward drop at 6 A enables lowest combined conduction loss in 600 V class.
Smooth switching waveform Controlled dV/dt and di/dt during turn-off reduce EMI generation, easing compliance with CISPR-11 Class B limits.
Tight parameter distribution ±5% VGE(th) and ±8% VCE(sat) across production lots simplify gate driver gain calibration and thermal derating margins.
175°C maximum junction temperature Enables operation in sealed enclosures or high-ambient environments without forced air cooling, extending system lifetime.

Applications

HID Lighting Ballast Piezo Fuel Injector Driver

Use Scenario: High-frequency electronic ballast driving 35–70 W metal halide lamps in streetlighting and industrial fixtures.

IC Role / Device Role / Timing Role: Half-bridge switching element operating at 20–50 kHz with zero-voltage switching assistance.

Use Value: Integrated diode enables synchronous rectification during dead-time, improving efficiency by 2.3% versus discrete solutions.

Use Scenario: High-precision, fast-response driver for diesel common-rail piezo injectors requiring sub-millisecond actuation.

IC Role / Device Role / Timing Role: Low-inductance, high-di/dt switch controlling 100–200 V pulses with <5 µs rise/fall times.

Use Value: 5 µs short-circuit rating supports safe current limiting during injector coil fault detection without external sensing.

Induction Heating Inverter Industrial UPS Inverter Stage

Use Scenario: 10–30 kW resonant inverter powering cooktops and metal melting systems with variable frequency control.

IC Role / Device Role / Timing Role: Hard-switched upper-leg switch in full-bridge topology, operating at 20–40 kHz with 50% duty cycle.

Use Value: 1.50 K/W Rth(j-c) allows direct mounting to aluminum heatsink, enabling 92% peak efficiency at 25 kHz.

Use Scenario: Online double-conversion UPS delivering clean 50/60 Hz sine wave output with <5 ms transfer time.

IC Role / Device Role / Timing Role: Output stage IGBT in H-bridge inverter, switching at 8–16 kHz with sinusoidal PWM modulation.

Use Value: Tight VCE(sat) distribution ensures balanced current sharing across parallel devices in modular 10 kVA units.

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-conducting IGBT applications.

Alternative Part Technical Difference Application Difference Selection Advice
IKD08N60RA Higher 8 A IC rating, 1.55 V VCE(sat), same PG-TO252-3 package and RC topology. Better suited for 1–2 kW inverters requiring higher continuous current headroom. Select when thermal margin is constrained and >6 A RMS load current is expected.
FGA25N120ANTD 1200 V rating, 25 A IC, TO-247 package, no integrated diode-requires external ultrafast diode. Targeted at high-voltage solar string inverters and traction drives where 600 V is insufficient. Choose only if system DC bus exceeds 500 V or discrete diode layout is acceptable for cost optimization.

Compared with IKD08N60RA, this part trades 2 A current headroom for tighter thermal footprint; versus FGA25N120ANTD, it offers integrated diode simplicity and lower gate charge but sacrifices voltage rating and package thermal mass.

Availability

IKD06N60RAATMA2 is available at Aetrix Electronics and suitable for HID lighting ballasts, piezo injector drivers, and induction heating inverters requiring stable component supply, AEC-Q101 reliability, and surface-mount manufacturability.

Supply support for IKD06N60RAATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon-based power devices and wide-bandgap technologies.

The TRENCHSTOP™ RC-Series targets industrial hard-switching applications demanding high power density and reliability-specifically optimizing for compact, high-efficiency converters in lighting, automotive subsystems, and motor control.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies rG = 23 Ω for standardized switching energy measurements. For hard-switching at 20 kHz, a 15–33 Ω gate resistor balances switching loss and EMI. Values above 47 Ω increase turn-off delay beyond 164 ns at 175°C, risking shoot-through in bridge configurations.

Can IKD06N60RAATMA2 be used in parallel configurations?

Yes-its tight VGE(th) distribution (±0.7 V) and positive temperature coefficient of VCE(sat) enable stable current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual 1–2 Ω gate resistors per device to suppress oscillation.

Is the integrated diode suitable for freewheeling in boost PFC stages?

No-the diode's 68 ns trr and 0.37 µC Qrr are optimized for hard-switching, not high-frequency PFC. Its reverse recovery characteristics cause excessive turn-on loss in 65–100 kHz boost converters; dedicated SiC Schottky diodes are preferred for that application.

What is the minimum PCB copper area needed for thermal performance at 6 A continuous?

With 6 cm² of 70 µm copper on the component side (per datasheet Fig. 3), the device sustains 6 A at TC = 100°C. Reducing copper to 2 cm² raises Rth(j-a) to ~75 K/W, limiting continuous current to ≤3.5 A at 55°C ambient-verify with thermal simulation before layout finalization.

IKD06N60RAATMA2 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
-
Current - Collector (Ic) (Max):
-
Current - Collector Pulsed (Icm):
-
Vce(on) (Max) @ Vge, Ic:
-
Power - Max:
-
Switching Energy:
-
Input Type:
-
Gate Charge:
-
Td (on/off) @ 25°C:
-
Test Condition:
-
Reverse Recovery Time (trr):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

IKD06N60RAATMA2 FAQ

1.How can I place an order for IKD06N60RAATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKD06N60RAATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKD06N60RAATMA2 reliable?

The price and inventory of IKD06N60RAATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKD06N60RAATMA2 is usually 5 days.

3.What payment methods are accepted for IKD06N60RAATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKD06N60RAATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKD06N60RAATMA2?

IKD06N60RAATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKD06N60RAATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKD06N60RAATMA2?

For technical support, including IKD06N60RAATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKD06N60RAATMA2 requirements.

6.How does Aetrix verify that IKD06N60RAATMA2 is sourced from the original manufacturer or authorized distributors?

All IKD06N60RAATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKD06N60RAATMA2 meets industry standards.

7.What is the process for return or replacement of IKD06N60RAATMA2?

All IKD06N60RAATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IKD06N60RAATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKD06N60RAATMA2 part is unused and in its original packaging.

Return procedure for IKD06N60RAATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IKD06N60RAATMA2 Tags

  • IKD06N60RAATMA2
  • IKD06N60RAATMA2 PDF
  • IKD06N60RAATMA2 Datasheet
  • IKD06N60RAATMA2 Specifications
  • IKD06N60RAATMA2 Images
  • Infineon Technologies
  • Infineon Technologies IKD06N60RAATMA2
  • Buy IKD06N60RAATMA2
  • IKD06N60RAATMA2 Price
  • IKD06N60RAATMA2 Distributor
  • IKD06N60RAATMA2 Supplier
  • IKD06N60RAATMA2 Wholesale
Related Products
STGD3NB60SDT4
STGD3NB60SDT4

STMicroelectronics

HGTD1N120BNS9A
HGTD1N120BNS9A

onsemi

STGF7NB60SL
STGF7NB60SL

STMicroelectronics

FGD5T120SH
FGD5T120SH

onsemi

STGB3NC120HDT4
STGB3NC120HDT4

STMicroelectronics

IKP20N60TXKSA1
IKP20N60TXKSA1

Infineon Technologies

STGW30H60DFB
STGW30H60DFB

STMicroelectronics

STGB30M65DF2
STGB30M65DF2

STMicroelectronics

IKB20N60TATMA1
IKB20N60TATMA1

Infineon Technologies

STGB30V60DF
STGB30V60DF

STMicroelectronics

IKW30N60DTPXKSA1
IKW30N60DTPXKSA1

Infineon Technologies

ISL9V3040P3
ISL9V3040P3

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER