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Infineon Technologies IKD08N65ET6ARMA1
- Part No.:
- IKD08N65ET6ARMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IKD08N65ET6ARMA1.pdf
- Description:
- IGBT TRENCH FS 650V 15A TO252-3
- Quantity:
- Payment:
- Shipping:
Inventory:2,994
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Product details
Overview
IKD08N65ET6ARMA1 from Infineon is a 650 V, 8 A TRENCHSTOP™ IGBT6 with integrated soft-fast anti-parallel Rapid diode in PG-TO252-3 (DPAK) package. It delivers 1.5 V typical VCE(sat) at 25°C, 3 µs short-circuit withstand time, and operates up to 175°C junction temperature. Designed for industrial motor drives and home appliance inverters, it enables high-efficiency 650 V switching with low conduction and switching losses.
For engineers reviewing the IKD08N65ET6ARMA1 datasheet, IKD08N65ET6ARMA1 pinout, IKD08N65ET6ARMA1 application, or IKD08N65ET6ARMA1 equivalent, key selection criteria include its 175°C rated junction temperature, 3.2 K/W IGBT thermal resistance (j–c), soft-recovery diode performance (trr = 43 ns @ 25°C), and gate charge of 17.0 nC - all critical for thermal management and drive circuit design in compact inverter modules.
Technical Context
This IGBT6 device uses trench-gate and field-stop technology to achieve tight parameter distribution, positive VCE(sat) temperature coefficient, and stable ruggedness across temperature. Its integrated Rapid diode exhibits low Qrr (0.15 µC @ 25°C) and controlled dIrr/dt (−530 A/µs), minimizing voltage overshoot and EMI during commutation.
The device is characterized for inductive switching at VCC = 400 V, IC = 5 A, and RG = 47 Ω, delivering td(off) = 59 ns and Eoff = 0.04 mJ at 25°C. At 150°C, Eoff rises to 0.07 mJ while td(off) increases to 69 ns - confirming robust high-temperature switching behavior suitable for uncooled or marginally cooled designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE | 650 V - Maximum blocking voltage for 400 V DC-link applications with 1.6× safety margin |
| IC (Tc = 25°C) | 8 A continuous - Rated collector current under standard heatsink conditions |
| VCE(sat) (25°C) | 1.5 V typ. - Low conduction loss enabling <1.2 W conduction loss at 8 A |
| tSC | 3 µs - Short-circuit withstand capability supports basic fault protection without active desat detection |
| Rth(j–c) (IGBT) | 3.2 K/W - Enables direct thermal interface to PCB copper or small heatsinks in space-constrained drives |
| QG | 17.0 nC - Moderate gate charge allows use of standard 1–2 A gate drivers without excessive power dissipation |
| trr (diode) | 43 ns @ 25°C - Fast, soft recovery reduces snubber requirements and system-level EMI filtering burden |
Pinout & Package
IKD08N65ET6ARMA1 is housed in a PG-TO252-3 (DPAK) surface-mount package with exposed drain pad for thermal enhancement. The package features gull-wing leads compatible with standard reflow soldering (MSL1, 260°C peak).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control input | Receives gate drive signal; requires ≤±20 V transient rating and low-inductance layout to minimize switching oscillation |
| Pin 2 (Collector) | High-side power output | Connected to DC-link positive; carries full load current and must be routed with low parasitic inductance |
| Pin 3 (Emitter) | Power return / reference node | Serves as common emitter for IGBT and cathode for integrated diode; critical for gate drive reference stability |
Key Features
| Feature | Design Value |
|---|---|
| TRENCHSTOP™ IGBT6 technology | Enables 1.5 V VCE(sat) with positive tempco - simplifies parallel operation and improves thermal runaway immunity |
| Integrated Rapid diode | Soft reverse recovery (Qrr = 0.15 µC, trr = 43 ns) reduces voltage spikes and eliminates need for external fast diodes |
| 175°C maximum junction temperature | Supports operation in sealed enclosures or high-ambient environments without derating below 100°C ambient |
| Low gate charge (17.0 nC) | Reduces gate driver power demand and enables higher PWM frequencies (>20 kHz) with minimal driver heating |
| Pb-free, RoHS-compliant plating | Meets industrial environmental compliance requirements and supports lead-free reflow assembly processes |
Applications
| General Purpose Drives (GPD) | Air Conditioning Inverters |
|---|---|
Use Scenario: Variable-speed control of 3-phase induction motors in HVAC blowers and compressors. IC Role / Device Role: Main switching device in 2-level inverter half-bridge leg, handling 400 V DC-link and 5–8 A RMS motor current. Use Value: 175°C rating allows operation in thermally constrained compressor modules; soft diode minimizes EMI in fan motor control without added snubbers. |
Use Scenario: Inverter-driven scroll compressors in residential split-system AC units. IC Role / Device Role: High-side switch in 650 V inverter stage, paired with complementary low-side IGBT in DPAK format. Use Value: 3 µs short-circuit rating supports basic overcurrent response in compressor stall events; low VCE(sat) reduces heat sink size by ~30% vs. prior-gen IGBTs. |
| Washing Machine Drum Motors | Induction Cooktop Half-Bridge |
Use Scenario: Direct-drive brushless motor control in high-efficiency front-load washers. IC Role / Device Role: Output stage switch in 3-phase inverter driving 200–400 W permanent magnet motor. Use Value: Integrated Rapid diode eliminates discrete freewheeling diodes, reducing BOM count and PCB area in compact drum motor controllers. |
Use Scenario: Resonant half-bridge switching in 20–30 kHz induction heating circuits. IC Role / Device Role: Upper-leg switch in LLC or series-resonant topology, operating with zero-voltage switching assist. Use Value: Controlled dIrr/dt (−530 A/µs) prevents hard reverse recovery stress on complementary switch, improving reliability at high-frequency resonance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IKD08N65ES6 | Same 650 V/8 A rating but uses older IGBT4 silicon; VCE(sat) = 1.6 V (typ.), tSC = 1 µs, no integrated diode | Requires external ultrafast diode; less suitable for space-constrained or EMI-sensitive designs | Select when cost sensitivity outweighs thermal or EMI performance needs; verify external diode matching for Qrr and trr |
| FGA25N120ANTD | 1200 V/25 A IGBT in TO-220; VCE(sat) = 2.1 V (typ.), tSC = 10 µs, no integrated diode | Over-specified voltage rating; larger package; higher conduction loss; requires discrete diode | Only consider for legacy 1200 V systems or where extended short-circuit margin justifies higher loss and footprint |
Compared with IKD08N65ES6 and FGA25N120ANTD, IKD08N65ET6ARMA1 offers superior thermal efficiency (lower VCE(sat)), built-in diode integration, and optimized 650 V rating - making it the preferred choice for new 400 V DC-link inverter designs targeting compactness, EMI reduction, and thermal headroom.
Availability
IKD08N65ET6ARMA1 is available at Aetrix Electronics and suitable for general purpose drives, air conditioning inverters, and washing machine motor controls requiring stable component supply, long-term industrial qualification, and RoHS-compliant manufacturing.
Supply support for IKD08N65ET6ARMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.
IKD08N65ET6ARMA1 belongs to the TRENCHSTOP™ IGBT6 product line, engineered specifically for high-efficiency, high-reliability 650 V motor drives and home appliance inverters where thermal robustness, soft switching, and system-level integration are critical.
FAQ
What is the maximum allowable gate-emitter voltage for IKD08N65ET6ARMA1?
The absolute maximum gate-emitter voltage is ±20 V for continuous operation and ±30 V for transient pulses ≤10 µs. Exceeding ±20 V continuously risks gate oxide degradation and threshold voltage shift. Gate drive circuits must include clamping (e.g., Zener diodes) to ensure sustained reliability under switching transients and Miller-induced spikes.
Does IKD08N65ET6ARMA1 require a negative gate voltage for turn-off?
No, IKD08N65ET6ARMA1 does not require negative gate voltage for reliable turn-off. Its VGE(th) is 4.8–6.4 V, and stable turn-off is achieved with 0 V gate bias. However, applying −5 V can improve noise immunity in high-dV/dt environments and reduce unintended turn-on risk in paralleled configurations.
Can IKD08N65ET6ARMA1 be used in parallel configurations?
Yes - its positive VCE(sat) temperature coefficient enables inherent current sharing. Successful parallel operation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling between devices. Derating to ≤70% of total rated current per device is recommended for long-term reliability.
Is the integrated diode in IKD08N65ET6ARMA1 suitable for freewheeling in hard-switched topologies?
Yes - the integrated Rapid diode is specifically characterized for hard-switched freewheeling with trr = 43 ns and Qrr = 0.15 µC at 25°C. Its soft recovery profile minimizes voltage overshoot and ringing, making it suitable for standard 2-level inverters without additional snubbers when layout parasitics are controlled.
IKD08N65ET6ARMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- TrenchStop™
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- IGBT Type:
- Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max):
- 650 V
- Current - Collector (Ic) (Max):
- 15 A
- Current - Collector Pulsed (Icm):
- 25 A
- Vce(on) (Max) @ Vge, Ic:
- 1.9V @ 15V, 5A
- Power - Max:
- 47 W
- Switching Energy:
- 110µJ (on), 40µJ (off)
- Input Type:
- Standard
- Gate Charge:
- 17 nC
- Td (on/off) @ 25°C:
- 20ns/59ns
- Test Condition:
- 400V, 5A, 47Ohm, 15V
- Reverse Recovery Time (trr):
- 43 ns
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO252-3
IKD08N65ET6ARMA1 FAQ
1.How can I place an order for IKD08N65ET6ARMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IKD08N65ET6ARMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IKD08N65ET6ARMA1 reliable?
The price and inventory of IKD08N65ET6ARMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKD08N65ET6ARMA1 is usually 5 days.
3.What payment methods are accepted for IKD08N65ET6ARMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKD08N65ET6ARMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IKD08N65ET6ARMA1?
IKD08N65ET6ARMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IKD08N65ET6ARMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IKD08N65ET6ARMA1?
For technical support, including IKD08N65ET6ARMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKD08N65ET6ARMA1 requirements.
6.How does Aetrix verify that IKD08N65ET6ARMA1 is sourced from the original manufacturer or authorized distributors?
All IKD08N65ET6ARMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKD08N65ET6ARMA1 meets industry standards.
7.What is the process for return or replacement of IKD08N65ET6ARMA1?
All IKD08N65ET6ARMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKD08N65ET6ARMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IKD08N65ET6ARMA1 part is unused and in its original packaging.
Return procedure for IKD08N65ET6ARMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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