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Infineon Technologies IKD10N60R
- Part No.:
- IKD10N60R
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IKD10N60R.pdf
- Description:
- IGBT TRENCH 600V 20A TO252-3
- Quantity:
- Payment:
- Shipping:
Inventory:7,880
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Product details
Overview
IKD10N60R from Infineon is a 600V, 10A reverse-conducting IGBT with integrated fast recovery diode in PG-TO252-3 package, designed for hard-switching industrial motor drives and SMPS inverters. It delivers 1.65V VCE(sat) at 10A/25°C, 175°C max junction temperature, 5µs short-circuit withstand time, and optimized EMI performance via smooth switching.
For engineers reviewing the IKD10N60R datasheet, IKD10N60R pinout, IKD10N60R application, or IKD10N60R equivalent, key selection criteria include conduction loss trade-offs (VCE(sat)/VF), thermal resistance (RthJC = 1.0 K/W for IGBT), switching energy (Eoff = 0.38 mJ @ 25°C), and RC-diode integration for half-bridge compactness in 1–20 kHz hard-switching topologies.
Technical Context
This TRENCHSTOP™ RC-Series device integrates an IGBT and anti-parallel diode monolithically in a single die, enabling reduced layout parasitics and eliminating discrete diode placement. Its gate threshold voltage (4.3–5.7 V) and transconductance (6.1 S) support stable drive under varying temperature and load conditions.
The device operates across -40°C to +175°C junction range with tight parameter distribution and JEDEC-qualified reliability. Switching behavior is characterized at 400V bus, 10A load, 23Ω gate resistor, and 60nH stray inductance-conditions reflecting real-world hard-switching converter design constraints.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE rating | 600 V - supports 400V DC-link designs with 50% safety margin for voltage transients in industrial inverters. |
| IC continuous | 10 A @ TC = 100°C - defines usable current in thermally constrained PCB-mount applications without heatsink. |
| VCE(sat) | 1.65 V @ 10A/25°C - directly determines conduction loss (Pcond ≈ 16.5 W at full load), critical for thermal management. |
| VF (diode) | 1.70 V @ 10A/25°C - sets forward conduction loss of integrated anti-parallel path, reducing component count vs. discrete diode solutions. |
| tsc | 5 µs @ VGE = 15 V, VCE ≤ 400 V - enables robust short-circuit protection timing in motor drive fault handling circuits. |
| RthJC (IGBT) | 1.00 K/W - quantifies thermal bottleneck from junction to case; used with heatsink RthCA to calculate max power dissipation. |
| Eoff | 0.38 mJ @ 25°C - measured turn-off energy at 400V/10A; key input for snubber design and efficiency estimation in hard-switched converters. |
Pinout & Package
IKD10N60R uses the PG-TO252-3 (DPAK) surface-mount package with exposed drain pad for thermal enhancement. The package measures 6.5 × 10.0 × 2.3 mm and is RoHS-compliant with MSL1 reflow rating (260°C).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control terminal for IGBT channel | Accepts ±20 V gate drive; threshold 4.3–5.7 V ensures noise immunity while enabling standard 15 V logic-level drivers. |
| Pin 2 (Emitter) | Common emitter for IGBT and diode | Serves as reference node for both devices; requires low-inductance connection to minimize switching oscillation and shoot-through risk. |
| Pin 3 (Collector/Drain Pad) | High-side output terminal (IGBT collector + diode cathode) | Exposed metal pad functions as primary heat path and high-current return; must be soldered to ≥6 cm² copper area for RthJA = 50 K/W. |
Key Features
| Feature | Design Value |
|---|---|
| TRENCHSTOP™ RC integration | Monolithic IGBT + fast diode eliminates interconnect inductance and reduces PCB footprint by ~40% vs. discrete pair. |
| Optimized VCE(sat)/VF balance | 1.65 V / 1.70 V at 10A enables <1.8 W total conduction loss per device at 10A, supporting higher power density in space-constrained drives. |
| Smooth switching waveform | Controlled dV/dt and di/dt reduce EMI generation, lowering filter component cost and easing EMC certification in Class B industrial equipment. |
| 175°C maximum junction temperature | Enables operation in high-ambient environments (e.g., enclosed motor control cabinets) without derating below 10A up to TC = 100°C. |
| JEDEC-qualified reliability | Validated for industrial/multimarket use with Pb-free plating; qualified per J-STD-020 MSL1, ensuring assembly robustness in automated SMT lines. |
Applications
| Industrial Motor Drives | Switch-Mode Power Supplies |
|---|---|
|
Use Scenario: 3-phase inverter stage in 0.75 kW HVAC blower drives operating at 8–12 kHz switching frequency. IC Role / Device Role / Timing Role: Half-bridge switch in 3-phase leg; handles bidirectional current flow via integrated diode during freewheeling. Use Value: RC integration eliminates external diode, reducing bill-of-materials and layout area while maintaining 1.65 V conduction loss at 10A. |
Use Scenario: Primary-side switch in 500 W telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: Main power switch with synchronous rectification support via integrated diode during reset phase. Use Value: 5 µs short-circuit capability allows safe operation under transient overloads without external desaturation detection circuitry. |
| Induction Cooking Systems | UPS Inverters |
|
Use Scenario: Resonant half-bridge in 3.5 kW domestic induction cooktop operating at 20–50 kHz. IC Role / Device Role / Timing Role: High-frequency hard-switched IGBT with integrated diode conducting reverse current during resonant zero-voltage switching transitions. Use Value: 62 ns diode reverse recovery time at 25°C minimizes tail current losses and improves system efficiency above 15 kHz. |
Use Scenario: Output inverter stage in 1 kVA online UPS delivering pure sine wave to sensitive IT loads. IC Role / Device Role / Timing Role: Bidirectional switching element in full-bridge configuration; integrated diode provides freewheeling path during dead-time intervals. Use Value: Tight parameter distribution ensures consistent switching timing across parallel devices, critical for low THD output waveform generation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar reverse-conducting IGBT applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IKD10N60D | Same 600V/10A rating but uses older TRENCHSTOP II process; VCE(sat) = 1.75 V (higher conduction loss), tsc = 3 µs. | Limited to lower ambient temperature or lower switching frequency (<10 kHz) due to reduced short-circuit ruggedness. | Select when legacy qualification or cost sensitivity outweighs efficiency and ruggedness requirements. |
| FGA25N120ANTD | 1200V/25A field-stop IGBT with no integrated diode; VCE(sat) = 2.1 V @ 25A; requires external ultrafast diode. | Targeted at higher-voltage DC-link systems (>600 V); not drop-in compatible due to voltage rating, pinout, and missing diode. | Choose only for 1200 V applications where IKD10N60R's 600 V rating is insufficient; adds component count and layout complexity. |
Compared with IKD10N60D, IKD10N60R offers lower conduction loss and superior short-circuit ruggedness; versus FGA25N120ANTD, it provides integrated diode functionality and better thermal performance at 600 V, but lacks voltage scalability.
Availability
IKD10N60R is available at Aetrix Electronics and suitable for industrial motor drives, switch-mode power supplies, and uninterruptible power supply inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for IKD10N60R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in IGBT and SiC device innovation since the 1990s.
IKD10N60R belongs to the TRENCHSTOP™ RC-Series, engineered specifically for hard-switching industrial applications demanding compact size, low EMI, and rugged short-circuit performance in 1–20 kHz frequency range.
FAQ
What is the maximum recommended gate resistor value for IKD10N60R in a 10 kHz hard-switching inverter?
The datasheet specifies switching characterization at rG = 23 Ω. For 10 kHz operation, a gate resistor between 15 Ω and 33 Ω balances switching loss and EMI; values >33 Ω increase turn-off energy (Eoff rises to 0.45 mJ at rG = 47 Ω), risking thermal overload at full load.
Can IKD10N60R replace a discrete IGBT + diode pair in an existing TO-220-based design?
No direct mechanical replacement: IKD10N60R uses PG-TO252-3 (DPAK), not TO-220. Thermal vias and ≥6 cm² copper are required to match TO-220 heatsinking. Electrical substitution is viable only if layout accommodates SMD mounting and gate drive impedance is adjusted for lower input capacitance (Cies = 655 pF).
Does the integrated diode support synchronous rectification in a ZVS LLC resonant converter?
No. The integrated diode is optimized for hard-switching freewheeling-not ZVS body-diode conduction. Its 62 ns trr and 0.56 µC Qrr cause significant reverse recovery loss at >100 kHz; dedicated GaN or SiC SR controllers with ultrafast diodes are required for true ZVS operation.
What is the minimum PCB copper area needed to achieve RthJA ≤ 50 K/W for IKD10N60R?
Per datasheet Figure 3, 6 cm² of 2 oz copper on the component layer, connected to internal ground planes via ≥6 thermal vias (0.3 mm diameter), achieves RthJA = 50 K/W. Reducing copper area to 2 cm² raises RthJA to 75 K/W, limiting continuous power to ~45 W at 55°C ambient.
IKD10N60R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- TrenchStop®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- IGBT Type:
- Trench
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 20 A
- Current - Collector Pulsed (Icm):
- 30 A
- Vce(on) (Max) @ Vge, Ic:
- 2.1V @ 15V, 10A
- Power - Max:
- 150 W
- Switching Energy:
- 590µJ
- Input Type:
- Standard
- Gate Charge:
- 64 nC
- Td (on/off) @ 25°C:
- 14ns/192ns
- Test Condition:
- 400V, 10A, 23Ohm, 15V
- Reverse Recovery Time (trr):
- 62 ns
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO252-3-11
IKD10N60R FAQ
1.How can I place an order for IKD10N60R through Aetrix?
Please submit a Request for Quotation (RFQ) for IKD10N60R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IKD10N60R reliable?
The price and inventory of IKD10N60R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKD10N60R is usually 5 days.
3.What payment methods are accepted for IKD10N60R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKD10N60R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IKD10N60R?
IKD10N60R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IKD10N60R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IKD10N60R?
For technical support, including IKD10N60R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKD10N60R requirements.
6.How does Aetrix verify that IKD10N60R is sourced from the original manufacturer or authorized distributors?
All IKD10N60R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKD10N60R meets industry standards.
7.What is the process for return or replacement of IKD10N60R?
All IKD10N60R units undergo pre-shipment inspection (PSI). If there is an issue with IKD10N60R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IKD10N60R part is unused and in its original packaging.
Return procedure for IKD10N60R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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