Infineon Technologies IKD10N60RAATMA2

Overview

IKD10N60RAATMA2 from Infineon Technologies is a TRENCHSTOP™ IGBT with 600 V V_CE, 20 A I_C (T_C = 100 °C), 1.5 V V_CE(sat) @ I_C = 10 A, and TO-252-3 (DPAK) package. It integrates an ultrafast anti-parallel diode and targets motor control in industrial inverters and UPS systems.

For engineers reviewing the IKD10N60RAATMA2 datasheet, IKD10N60RAATMA2 pinout, IKD10N60RAATMA2 application, or IKD10N60RAATMA2 equivalent, key selection criteria include V_CE(sat) stability at 100 °C, diode reverse recovery charge (Q_rr = 140 nC), and gate threshold voltage (V_GE(th) = 4.5 V typical).

Technical Context

This IGBT employs Infineon's TRENCHSTOP™ 6 technology, delivering low conduction loss and soft switching behavior via optimized carrier lifetime control. Its integrated diode features low Q_rr and soft recovery to reduce EMI and voltage overshoot during turn-off.

The device operates with a gate-emitter voltage range of –20 V to +20 V and supports 15 V nominal gate drive. Thermal resistance R_thJC is 1.2 K/W, enabling reliable operation up to T_J = 175 °C under pulsed conditions.

Key Specifications

Pinout & Package

Package: TO-252-3 (DPAK), surface-mount, single-ended lead frame with exposed drain pad for thermal enhancement.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with STGP10NC60KD and IXGH10N60B3, IKD10N60RAATMA2 delivers lower conduction loss, superior diode integration, and surface-mount compatibility-making it optimal for space-constrained, thermally demanding 2–5 kW industrial inverters.

Availability

IKD10N60RAATMA2 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar microinverters, and induction heating systems requiring stable component supply and long-term production continuity.

Supply support for IKD10N60RAATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

The TRENCHSTOP™ IGBT product line targets high-efficiency, high-reliability power conversion in motor drives, UPS, and renewable energy systems, emphasizing low-loss switching and rugged thermal performance.

FAQ

What is the maximum recommended gate resistor value for IKD10N60RAATMA2 in 20 kHz motor drive applications?

A 22 Ω gate resistor is recommended to balance switching speed and voltage overshoot. At 20 kHz, this value limits peak dv/dt to <50 V/ns while keeping turn-off energy below 1.2 mJ per cycle. Lower values risk oscillation due to parasitic inductance; higher values increase conduction time and thermal stress.

Does IKD10N60RAATMA2 require negative gate voltage for reliable turn-off?

No. The device achieves clean turn-off with 0 V gate voltage due to its 4.5 V V_GE(th) and low Miller capacitance. Negative bias (e.g., –5 V) is optional and only beneficial in high-noise environments where gate voltage coupling exceeds 2 V peak.

Can IKD10N60RAATMA2 replace IKD08N60RA in existing designs?

Yes, with minor layout review. Both share TO-252-3 footprint and pinout, but IKD10N60RAATMA2 offers 25% higher I_C rating and 0.1 V lower V_CE(sat). Gate drive timing remains compatible; thermal design must verify 20 A operation at target ambient temperature.

Is the integrated diode rated for continuous freewheeling current in hard-switched topologies?

Yes. The diode is rated for I_F = 20 A continuous at T_C = 100 °C and supports repetitive hard commutation up to 20 kHz. Its soft recovery (SOF = 1.8) prevents snap-off and limits reverse recovery dv/dt to <100 V/ns under typical gate drive conditions.