Infineon Technologies IKD10N60RFATMA1

Overview

IKD10N60RFATMA1 from Infineon is a 600V, 10A TRENCHSTOP™ Reverse Conducting (RC) IGBT with integrated fast diode in PG-TO252-3 package, designed for high-efficiency motor drives operating at 4–30 kHz switching frequencies. It delivers 2.2 V V_CE(sat) at 25°C, 175°C maximum junction temperature, and 5 µs short-circuit withstand time-enabling compact, thermally robust inverter stages in compressor and fan control circuits.

For engineers reviewing the IKD10N60RFATMA1 datasheet, IKD10N60RFATMA1 pinout, IKD10N60RFATMA1 application, or IKD10N60RFATMA1 equivalent, key selection criteria include its RC topology eliminating external anti-parallel diode, low Q_rr (0.27 µC at 25°C), tight parameter distribution, and JEDEC-qualified reliability for industrial drive environments.

Technical Context

This RC-IGBT integrates a co-packaged ultrafast diode with matched thermal characteristics and shared die substrate, enabling symmetrical conduction paths and reduced layout parasitics in half-bridge configurations. Its TRENCHSTOP™ cell structure optimizes E_on/E_off balance (0.19 mJ / 0.16 mJ at 25°C) while maintaining low V_CE(sat) drift over temperature.

The device operates with gate-emitter threshold voltage of 4.3–5.7 V and features internal gate resistor (r_G) for controlled turn-on/turn-off dynamics. Switching behavior is characterized under standardized inductive load conditions (V_CC = 400 V, I_C = 10 A, R_G = 26 Ω), supporting predictable EMI performance across 4–30 kHz range.

Key Specifications

Pinout & Package

IKD10N60RFATMA1 uses PG-TO252-3 (DPAK) package with exposed drain pad for thermal enhancement. Pin assignment is validated per Infineon package drawing revision 2017-09-26.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RC-IGBT applications.

Compared with IKD10N65RF and IRG7PH42UD1, IKD10N60RFATMA1 offers optimal balance of voltage rating, conduction loss, and integration density for space-constrained 400 V industrial drives-delivering lower system-level EMI and simplified thermal design without sacrificing short-circuit ruggedness.

Availability

IKD10N60RFATMA1 is available at Aetrix Electronics and suitable for compressor inverters, fan speed controllers, pump motor drives, and industrial conveyor systems requiring stable component supply and long-term industrial-grade availability.

Supply support for IKD10N60RFATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

IKD10N60RFATMA1 belongs to the TRENCHSTOP™ RC-Drives Fast Series, engineered specifically for high-efficiency, low-noise motor drives operating in the 4–30 kHz range with emphasis on thermal robustness and system-level EMI reduction.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies R_G = 26 Ω for characterization, and gate drive must limit peak gate current to ±20 V. Using R_G > 47 Ω increases turn-off delay and E_off, risking shoot-through in half-bridge configurations. For 15 V gate drive, R_G between 10 Ω and 33 Ω ensures safe dV/dt control while maintaining < 200 ns t_d(off) at 175°C junction temperature.

Can IKD10N60RFATMA1 replace standard IGBTs without modifying the PCB layout?

Yes-it uses PG-TO252-3 (DPAK) footprint identical to many discrete IGBTs and MOSFETs. However, because it integrates the anti-parallel diode, external diode traces and pads must be removed or left unpopulated. Thermal vias under the drain pad must match Infineon's recommended 6 cm² copper area for R_th(j-a) = 50 K/W performance.

How does the integrated diode's reverse recovery compare to discrete ultrafast diodes?

At 25°C and 10 A, Q_rr = 0.27 µC and t_rr = 72 ns-comparable to discrete 600 V ultrafast diodes like IDH10SG60C. Crucially, the monolithic integration ensures matched thermal coupling and identical junction temperature tracking between IGBT and diode, eliminating thermal-induced timing skew seen in discrete pairings.

Is this device suitable for solar MPPT or UPS applications?

No-its 4–30 kHz optimization and lack of soft-switching features make it unsuitable for high-frequency isolated DC/DC or resonant topologies. It is qualified exclusively for hard-switched motor drive applications per JEDEC JESD47 and JESD22 standards, with no specified performance in bidirectional energy transfer or zero-voltage switching conditions.