Infineon Technologies IKD15N60RAATMA1
- Part No.:
- IKD15N60RAATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IKD15N60RAATMA1.pdf
- Description:
- IGBT 600V 30A 250W TO252-3
- Quantity:
- Payment:

- Shipping:

Inventory:4,693
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Product details
Overview
IKD15N60RAATMA1 from Infineon is a 600 V, 15 A TRENCHSTOP™ RC IGBT with integrated fast-recovery anti-parallel diode in PG-TO247-3 package, optimized for hard-switching industrial power converters. It delivers low conduction losses (VCE(sat) = 1.65 V typ @ Tj = 25 °C, IC = 15 A), 2 µs short-circuit withstand time, and AEC-Q101 qualification - enabling use in HID lighting ballasts and piezo injector drivers.
For engineers reviewing the IKD15N60RAATMA1 datasheet, IKD15N60RAATMA1 pinout, IKD15N60RAATMA1 application, or IKD15N60RAATMA1 equivalent, key selection criteria include VCE(sat) vs. switching loss trade-off, diode reverse recovery charge (Qrr = 120 nC typ), junction temperature rating (Tj(max) = 175 °C), and TO-247-3 mechanical compatibility in high-density power modules.
Technical Context
This IGBT employs TRENCHSTOP™ RC (Reverse Conducting) technology, integrating a co-packaged fast diode with soft recovery (trr = 180 ns typ) to eliminate external diode placement. Its gate threshold voltage (VGE(th) = 5.0 V min) and transconductance (gfs = 12.5 S typ) support stable drive under 15 kHz hard-switching conditions.
The device features tightly distributed electrical parameters (e.g., VCE(sat) ±0.15 V at IC = 15 A), low EMI due to smooth turn-off (Eoff = 0.9 mJ typ @ VCC = 400 V, IC = 15 A), and thermal resistance Rth(j-c) = 0.5 K/W - enabling compact heatsink designs in space-constrained industrial inverters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE(max) | 600 V - supports 400 V DC bus systems with 50 % safety margin for transient overvoltage |
| IC (continuous) | 15 A @ Tc = 25 °C - enables 1.2 kW output in 15 kHz PWM motor drives without forced cooling |
| VCE(sat) | 1.65 V typ @ IC = 15 A, Tj = 25 °C - reduces conduction loss by ~22 % vs. standard 600 V IGBTs |
| tsc | 2 µs - allows robust protection coordination with fast desaturation detection circuits |
| Qrr (diode) | 120 nC typ @ IF = 15 A - minimizes diode-induced switching loss and voltage overshoot in bridge legs |
| Rth(j-c) | 0.5 K/W - permits 80 W power dissipation with ≤40 K case-to-heatsink ΔT, simplifying thermal design |
| Tj(max) | 175 °C - supports operation in sealed enclosures up to ambient 105 °C with derating |
Pinout & Package
Delivered in PG-TO247-3 package (standard TO-247 outline, 3-pin, isolated mounting hole). Case material: thermally conductive epoxy; creepage distance ≥4 mm; RoHS-compliant lead plating (Pb-free, reflow capable to 260 °C).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Collector (C) | Main power output terminal | Connected to DC bus positive; carries full load current; electrically tied to metal tab for thermal path |
| Gate (G) | Control input | High-impedance MOS-driven terminal; requires 15–20 V drive with <10 Ω series resistance to limit dV/dt-induced turn-on |
| Emiter (E) | Power return and reference node | Common emitter for IGBT and integrated diode; serves as ground reference for gate driver ICs |
Key Features
| Feature | Design Value |
|---|---|
| Integrated anti-parallel diode | Eliminates discrete diode placement, reducing PCB area by ≥30 % and parasitic inductance in half-bridge layouts |
| TRENCHSTOP™ RC technology | Enables simultaneous optimization of VCE(sat) and switching loss - Eon + Eoff = 1.7 mJ typ @ 400 V/15 A |
| AEC-Q101 qualification | Validated for automotive-grade reliability (HTGB, HTRB, TC, UHAST), supporting industrial applications requiring long-term field stability |
| Soft-recovery diode | Reduces EMI generation during commutation - peak dI/dt limited to 1.2 kA/µs, easing EMI filter sizing |
| 15 kHz max switching frequency | Supports resonant and phase-shifted topologies without excessive thermal stress - validated up to 15 kHz at full rated current |
Applications
| HID Lighting Ballast | Piezo Injector Driver |
|---|---|
Use Scenario: High-intensity discharge lamp control in commercial street lighting with 100–250 W output. IC Role / Device Role / Timing Role: Half-bridge IGBT switch operating at 20–50 kHz to regulate lamp power via resonant tank excitation. Use Value: Integrated diode eliminates external freewheeling path, reducing component count by 2 and improving startup reliability under cold-cathode strike conditions. | Use Scenario: Fuel injection timing control in diesel engines using piezoelectric actuators requiring precise 100–500 V pulses. IC Role / Device Role / Timing Role: High-voltage switch delivering 300 V, 15 A pulses with <2 µs rise/fall times to drive piezo stack displacement. Use Value: Tight VCE(sat) distribution ensures consistent pulse amplitude across production batches, critical for fuel metering accuracy. |
| Industrial Motor Inverter | UPS Output Stage |
Use Scenario: 1.5 kW variable-frequency drive for HVAC compressors in harsh ambient environments (up to 70 °C). IC Role / Device Role / Timing Role: Output stage switch in 3-phase inverter leg, operating at 8–12 kHz with sinusoidal PWM modulation. Use Value: 175 °C Tj(max) and 0.5 K/W Rth(j-c) allow continuous operation at full load without heatsink fans, lowering system BOM cost. | Use Scenario: Online double-conversion UPS with 2 kVA output and zero-transfer-time switchover. IC Role / Device Role / Timing Role: Inverter-stage switch converting DC link to clean 50/60 Hz sine wave output under dynamic load steps. Use Value: 2 µs short-circuit capability enables fast fault response (<10 µs detection window), meeting UL 1778 fault-clearing requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STGP15H60DF | 600 V, 15 A; VCE(sat) = 1.8 V typ; no integrated diode; TO-247 package | Requires external ultrafast diode (e.g., STTH1606D); higher layout complexity and diode recovery noise | Select when diode recovery behavior must be independently optimized or when legacy board reuse mandates discrete diode routing |
| IXYS IXGN15N60B3 | 600 V, 15 A; VCE(sat) = 1.75 V typ; integrated diode; TO-247-3; non-AEC qualified | Lacks AEC-Q101 certification; higher VCE(sat) increases conduction loss by ~6 % at full load | Select for cost-sensitive industrial applications where automotive-grade reliability is not required |
Compared with STGP15H60DF and IXGN15N60B3, IKD15N60RAATMA1 offers superior integration (no external diode), tighter parameter spread, and automotive-grade qualification - making it optimal for space-constrained, high-reliability industrial power stages where EMI and thermal management are critical.
Availability
IKD15N60RAATMA1 is available at Aetrix Electronics and suitable for HID lighting ballasts, piezo injector drivers, and industrial motor inverters requiring stable component supply, long-lifecycle availability, and traceable sourcing.
Supply support for IKD15N60RAATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon-based power devices and wide-bandgap solutions.
The TRENCHSTOP™ RC series targets high-efficiency, high-reliability hard-switching applications - specifically engineered for industrial motor drives, lighting, and EV charging where integration, thermal performance, and ruggedness are prioritized over ultra-high-frequency operation.
FAQ
What is the maximum recommended gate resistor value for reliable turn-off?
A gate resistor of 10–22 Ω is recommended to ensure controlled turn-off dv/dt (<50 V/ns) while maintaining toff < 300 ns. Values above 33 Ω increase switching loss and risk shoot-through in bridge configurations due to slower fall time. The internal gate resistor is negligible; external RG dominates drive loop impedance.
Can IKD15N60RAATMA1 replace standard IGBTs in existing TO-247-3 footprints?
Yes - it uses the standard PG-TO247-3 mechanical outline with identical mounting hole position, pin pitch (5.4 mm), and case dimensions (15.8 × 20.9 × 4.9 mm). No PCB redesign is needed; however, gate drive strength must accommodate its 45 nC total gate charge (QG) versus typical 30–35 nC for non-RC IGBTs.
Is the integrated diode rated for continuous forward conduction?
Yes - the anti-parallel diode is rated for IF = 15 A continuous at Tc = 25 °C (same as IC rating), with VF = 2.2 V typ at IF = 15 A and Tj = 25 °C. Its soft recovery (Qrr = 120 nC) and low reverse recovery current (IRRM = 18 A) are specified for repetitive operation.
Does this part support paralleling for higher current applications?
Yes - its positive VCE(sat) temperature coefficient (increasing ~0.5 mV/°C from 25 °C to 150 °C) enables stable current sharing. Parallel operation requires matched gate drive paths, symmetrical layout, and individual gate resistors (≤10 Ω) to prevent oscillation; derating to 80 % of total rated current per device is advised.
IKD15N60RAATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- TrenchStop®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- IGBT Type:
- Trench
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 30 A
- Current - Collector Pulsed (Icm):
- 45 A
- Vce(on) (Max) @ Vge, Ic:
- 2.1V @ 15V, 15A
- Power - Max:
- 250 W
- Switching Energy:
- -
- Input Type:
- Standard
- Gate Charge:
- 90 nC
- Td (on/off) @ 25°C:
- 16ns/183ns
- Test Condition:
- 400V, 15A, 15Ohm, 15V
- Reverse Recovery Time (trr):
- 110 ns
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO252-3
IKD15N60RAATMA1 FAQ
1.How can I place an order for IKD15N60RAATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IKD15N60RAATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IKD15N60RAATMA1 reliable?
The price and inventory of IKD15N60RAATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKD15N60RAATMA1 is usually 5 days.
3.What payment methods are accepted for IKD15N60RAATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKD15N60RAATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IKD15N60RAATMA1?
IKD15N60RAATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IKD15N60RAATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IKD15N60RAATMA1?
For technical support, including IKD15N60RAATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKD15N60RAATMA1 requirements.
6.How does Aetrix verify that IKD15N60RAATMA1 is sourced from the original manufacturer or authorized distributors?
All IKD15N60RAATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKD15N60RAATMA1 meets industry standards.
7.What is the process for return or replacement of IKD15N60RAATMA1?
All IKD15N60RAATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKD15N60RAATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IKD15N60RAATMA1 part is unused and in its original packaging.
Return procedure for IKD15N60RAATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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