Infineon Technologies IKFW40N60DH3EXKSA1

Overview

IKFW40N60DH3EXKSA1 from Infineon is a 600 V, 30 A TRENCHSTOP™ Advanced Isolation IGBT with integrated Rapid 1 antiparallel diode in a fully isolated TO-247 package. It delivers 2.3 V V_CE(sat) at 25°C, 5 µs short-circuit withstand time at 175°C junction temperature, and 2500 V_RMS isolation for industrial motor drives and PFC stages in air conditioning systems.

For engineers reviewing the IKFW40N60DH3EXKSA1 datasheet, IKFW40N60DH3EXKSA1 pinout, IKFW40N60DH3EXKSA1 application, or IKFW40N60DH3EXKSA1 equivalent, key selection criteria include isolated mounting surface compliance, soft fast diode recovery (Q_rr = 0.40 µC at 25°C), and thermal resistance R_th(j–h) = 1.15–1.35 K/W for heatsink-integrated thermal design.

Technical Context

This third-generation TRENCHSTOP IGBT uses field-stop trench gate technology to achieve positive V_CE(sat) temperature coefficient and low EMI emissions. Its integrated Rapid 1 diode provides soft reverse recovery (trr = 72 ns at 25°C) and low Q_rr, reducing switching losses in hard-switched topologies.

The device operates up to 175°C junction temperature and features 2500 V_RMS isolation between collector and mounting base, validated per JEDEC 47/20/22 standards. Gate threshold voltage (V_GE(th) = 4.1–5.7 V) ensures robust noise immunity in noisy industrial environments.

Key Specifications

Pinout & Package

PG-TO247-3-AI fully isolated package with insulated mounting surface; 3-terminal configuration (Collector, Gate, Emitter); creepage/clearance optimized for 2500 V_RMS isolation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with IKW40N60H3 and FGH40N60UF, IKFW40N60DH3EXKSA1 uniquely combines certified isolation, integrated soft-recovery diode, and industry-leading short-circuit ruggedness-enabling faster time-to-market for safety-critical industrial inverters without thermal or layout compromises.

Availability

IKFW40N60DH3EXKSA1 is available at Aetrix Electronics and suitable for air conditioning PFC stages, general purpose drives, and servo drive power stages requiring stable component supply, long-term lifecycle support, and guaranteed isolation performance.

Supply support for IKFW40N60DH3EXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy applications.

This device belongs to the TRENCHSTOP™ Advanced Isolation series, engineered specifically for high-reliability industrial motor drives and power conversion systems demanding certified electrical isolation and robust short-circuit capability.

FAQ

What is the maximum allowable gate-emitter voltage for continuous operation?

The IKFW40N60DH3EXKSA1 has a continuous gate-emitter voltage rating of ±20 V. Transient excursions up to ±30 V are permitted for durations ≤10 µs with duty cycle <1%. Exceeding these limits risks permanent gate oxide damage and threshold voltage shift, especially at elevated junction temperatures above 125°C.

Does the isolated mounting surface require thermal interface material?

Yes-despite its electrical isolation, the metal tab requires thermally conductive interface material (e.g., silicone grease or phase-change pad) to ensure effective heat transfer to the heatsink. The 2500 V_RMS isolation is achieved via internal ceramic or polymer film, not air gap, so thermal contact remains essential for maintaining R_th(j–h) ≤1.35 K/W.

Can this IGBT be paralleled with identical units without external emitter resistors?

Yes-its positive V_CE(sat) temperature coefficient (2.3 V at 25°C rising to 2.9 V at 175°C) enables inherent current balancing. However, matched gate drive layout (equal trace inductance/resistance) and symmetrical mechanical mounting are required to prevent dynamic current imbalance during turn-on/turn-off transitions.

What is the recommended gate resistor value for 400 V DC-link operation at 25 kHz?

A 10 Ω gate resistor is validated in the datasheet for V_CC = 400 V, I_C = 30 A, and T_vj = 175°C, yielding td(off) = 165 ns and E_off = 0.51 mJ. For 25 kHz operation, this value balances switching loss (1.69 mJ total energy) and EMI; lowering to 6.8 Ω increases dV/dt and radiated emissions without meaningful efficiency gain.