Infineon Technologies IKFW50N65EH5XKSA1

Overview

IKFW50N65EH5XKSA1 from Infineon is a 650V, 40A TRENCHSTOP™ 5 Advanced Isolation IGBT with integrated RAPID 1 antiparallel diode in a fully isolated TO-247 package. It delivers 1.65V V_CE(sat) at 25°C, 175°C max junction temperature, and 2500V_RMS isolation for high-reliability industrial switching. Used in air conditioning PFC stages and welding converters where thermal robustness and galvanic separation are critical.

For engineers reviewing the IKFW50N65EH5XKSA1 datasheet, IKFW50N65EH5XKSA1 pinout, IKFW50N65EH5XKSA1 application, or IKFW50N65EH5XKSA1 equivalent, key selection criteria include isolated mounting surface validation, soft diode recovery (trr = 52 ns), gate charge (Q_G = 95 nC), and thermal resistance (R_th(j–h) = 1.21 K/W) under forced-heatsink conditions.

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop technology to achieve low conduction loss and fast switching with minimal tail current. Its co-packaged RAPID 1 diode features soft reverse recovery (Q_rr = 0.95 µC, dirr/dt = –1081 A/µs) and low forward voltage (V_F = 1.45 V at 40 A, 25°C).

The device integrates full electrical isolation (2500 V_RMS, 1 min) between collector and heatsink via reinforced polyimide carrier, enabling direct heatsink mounting without additional insulation. It supports hard-switching topologies up to 100 kHz and resonant converters with stable SOA across –40°C to +175°C junction range.

Key Specifications

Pinout & Package

Package: PG-HSIP247-3-2 (TO-247 variant with isolated mounting base). Fully insulated case rated for 2500 V_RMS isolation; M3 screw mount with 0.6 Nm torque spec.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-isolation IGBT applications.

Compared with IKW40N65ES5XKSA1 and FGH40N60UFD, the IKFW50N65EH5XKSA1 uniquely combines 650 V rating, 2500 V_RMS isolation, and soft-diode performance-enabling simplified thermal-mechanical design in space-constrained industrial inverters without sacrificing efficiency or reliability.

Availability

IKFW50N65EH5XKSA1 is available at Aetrix Electronics and suitable for residential air conditioning PFC, industrial welding converters, and mid-frequency UPS inverters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IKFW50N65EH5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to Infineon's TRENCHSTOP™ 5 Advanced Isolation IGBT product line, engineered specifically for high-efficiency, high-reliability industrial inverters where galvanic isolation, thermal resilience, and soft switching are mandatory.

FAQ

What is the maximum recommended heatsink temperature for continuous operation?

The datasheet specifies IC = 49.0 A at Th = 65°C and IC = 59.0 A at Th = 25°C. For reliable continuous operation, Infineon recommends limiting heatsink temperature to ≤65°C when operating at rated 40 A collector current. Exceeding this requires derating per Figure 2, and thermal design must account for R_th(j–h) = 1.21 K/W and ambient airflow constraints.

Can the integrated diode be used as the sole freewheeling path in a half-bridge configuration?

Yes-the co-packaged RAPID 1 diode is rated for IF = 74.0 A (25°C) and IF_puls = 160.0 A, matching the IGBT's pulsed current capability. Its soft recovery (trr = 52 ns, Q_rr = 0.95 µC) ensures low voltage overshoot during commutation, making it suitable as the primary freewheeling element without external diodes in standard half-bridge motor drives.

Is the 2500 V_RMS isolation rating applicable to both AC and DC stress?

The 2500 V_RMS isolation rating is validated per IEC 60747-5-2 at 50/60 Hz for 60 seconds and applies to AC sinusoidal stress. For DC isolation, the device meets creepage/clearance requirements of reinforced insulation per UL 60747-5-2, supporting up to 1000 V_DC working voltage in end-equipment certified to IEC 62368-1 or IEC 60664-1.

How does gate resistor selection affect switching loss and EMI in this IGBT?

Increasing RG (e.g., from 15 Ω to 30 Ω) raises td(off) and tf, reducing dV/dt and EMI but increasing E_off (from 0.40 mJ to ~0.75 mJ at 30 Ω). The datasheet shows E_ts rises linearly with RG (Figure 12), so optimal RG balances EMI compliance against thermal limits-15 Ω is recommended for 400 V, 40 A, 150°C operation per Figure 8.