Infineon Technologies IKFW50N65ES5XKSA1

Overview

IKFW50N65ES5XKSA1 from Infineon is a 650 V, 40 A TRENCHSTOP™ 5 advanced isolation IGBT with integrated RAPID 1 antiparallel diode in TO-247 package, designed for high-frequency resonant and hard-switching converters requiring low conduction loss (V_CE(sat) = 1.35 V at 40 A, 25°C), low gate charge (Q_G = 95 nC), and 175°C junction operation-used in UPS inverters and welding power stages.

For engineers reviewing the IKFW50N65ES5XKSA1 datasheet, IKFW50N65ES5XKSA1 pinout, IKFW50N65ES5XKSA1 application, or IKFW50N65ES5XKSA1 equivalent, key selection criteria include soft-switching capability, thermal resistance (R_th(j–h) = 1.01 K/W typ.), isolated package safety margin, and diode reverse recovery performance (Q_rr = 1.11 µC at 25°C).

Technical Context

This IGBT employs TRENCHSTOP™ 5 S5 trench-gate technology optimized for smooth voltage transitions and reduced switching tail current. Its copackaged RAPID 1 diode delivers fast (t_rr = 69 ns), soft reverse recovery with low Q_rr and controlled di/dt (−2000 A/µs), minimizing voltage overshoot in bridge-leg configurations.

The device operates with gate-emitter threshold voltage V_GE(th) = 4.0 V (typ.) and exhibits stable transconductance (g_fs = 44 S) across temperature. Thermal design is enabled by its fully isolated TO-247 package with 2500 V_RMS isolation rating and defined mounting torque (0.6 Nm for M3 screw).

Key Specifications

Pinout & Package

TO-247-3 package with fully isolated construction (2500 V_RMS, 1 min), plastic body, and metal tab acting as collector terminal. Mounting via M3 screw (0.6 Nm torque). Backside collector contact ensures low-inductance power path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Compared with IKW50N65ES5XKSA1, this part adds 2500 V_RMS isolation without increasing footprint or thermal resistance-critical for medical-grade UPS and Class I industrial equipment where creepage/clearance compliance is mandatory.

Availability

IKFW50N65ES5XKSA1 is available at Aetrix Electronics and suitable for uninterruptible power supplies, welding inverters, resonant DC-DC converters, and induction heating systems requiring stable component supply, long-lifecycle support, and certified isolation performance.

Supply support for IKFW50N65ES5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

This device belongs to the TRENCHSTOP™ 5 Advanced Isolation product line, engineered specifically for high-reliability industrial power conversion where galvanic isolation, thermal robustness, and soft-switching efficiency are jointly required.

FAQ

What is the maximum allowable gate-emitter voltage for continuous operation?

The IKFW50N65ES5XKSA1 has a continuous gate-emitter voltage rating of ±20 V. Transient excursions up to ±30 V are permitted for durations ≤10 µs with duty cycle <1%. Exceeding ±20 V continuously risks gate oxide degradation and threshold voltage shift over time.

Can this IGBT be used in parallel configurations?

Yes-its positive temperature coefficient of V_CE(sat) (increasing from 1.35 V at 25°C to 1.60 V at 175°C) enables inherent current sharing. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling via shared heatsink to maintain ΔT_j < 10°C.

Does the integrated diode support bidirectional current in bridge-leg operation?

Yes-the copackaged RAPID 1 diode is rated for full 74 A forward current and handles reverse recovery during commutation. It conducts freewheeling current during the IGBT off-state and supports bidirectional energy flow in half-bridge and full-bridge topologies without external diodes.

What is the recommended gate resistor value for 20 kHz hard-switching operation?

For 20 kHz hard-switching with V_CC = 400 V and I_C = 40 A, a 10 Ω gate resistor (RG(on)/RG(off)) balances switching speed and voltage overshoot. At this value, t_d(off) ≈ 130 ns and E_off ≈ 0.40 mJ (25°C), minimizing total losses while limiting dv/dt to safe levels for motor-drive insulation.