Infineon Technologies IKFW60N60EH3XKSA1

Overview

IKFW60N60EH3XKSA1 from Infineon is a 600 V, 50 A TRENCHSTOP™ Advanced Isolation IGBT with integrated Rapid 1 antiparallel diode in a fully isolated TO-247-3-AI package. It delivers 1.85 V V_CE(sat) at 25°C, 5 µs short-circuit withstand time at 175°C junction temperature, and 2500 V_RMS isolation for high-reliability industrial power conversion stages such as solar string inverters and servo drives.

For engineers reviewing the IKFW60N60EH3XKSA1 datasheet, IKFW60N60EH3XKSA1 pinout, IKFW60N60EH3XKSA1 application, or IKFW60N60EH3XKSA1 equivalent, key selection criteria include its isolated mounting surface, soft fast diode recovery (trr = 91 ns @ 25°C), positive V_CE(sat) temperature coefficient, and validated operation up to 175°C junction temperature in high-power switching topologies.

Technical Context

This IGBT employs TRENCHSTOP™ third-generation trench-gate field-stop technology optimized for high-speed switching with low conduction loss and robust short-circuit ruggedness. Its monolithic integration with a Rapid 1 diode enables low EMI and reduced tail current during turn-off, critical for hard-switched industrial SMPS and UPS systems.

The fully isolated PG-TO247-3-AI package provides 2500 V_RMS galvanic separation between collector and heatsink, eliminating external insulation requirements while maintaining thermal resistance of 0.77–0.91 K/W (junction-to-heatsink) under 500 N clamping force - enabling direct bolt-down mounting on grounded heat sinks.

Key Specifications

Pinout & Package

Package: PG-TO247-3-AI - Fully isolated TO-247 variant with insulated mounting surface and three terminals (Collector, Gate, Emitter). The package integrates an electrically isolated metal baseplate rated for 2500 V_RMS isolation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with IKFW60N60ES5XKSA1 and FGH60N60SMD, the IKFW60N60EH3XKSA1 uniquely combines certified galvanic isolation, 5 µs short-circuit capability, and soft diode recovery - making it optimal for industrial inverters where safety, ruggedness, and EMI control are co-primary requirements.

Availability

IKFW60N60EH3XKSA1 is available at Aetrix Electronics and suitable for solar string inverters, industrial UPS systems, and servo drive output stages requiring stable component supply, long-term lifecycle support, and traceable sourcing for safety-certified designs.

Supply support for IKFW60N60EH3XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to the TRENCHSTOP™ Advanced Isolation series, engineered specifically for high-reliability industrial power conversion where galvanic isolation, thermal ruggedness, and controlled switching behavior are mandatory.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG(on)/RG(off) = 7.0 Ω for characterization, and recommends keeping total gate loop inductance below 30 nH. For 50 A operation at 175°C, RG ≤ 10 Ω maintains td(off) < 260 ns and Eoff < 1.02 mJ. Higher values increase switching loss and thermal stress; values > 15 Ω risk incomplete turn-off under high di/dt conditions.

Does the isolated package require special mounting torque or thermal interface material?

Yes - the datasheet specifies 0.6 Nm maximum torque for M3 screws and confirms performance at 500 N clamping force. Standard thermal paste (e.g., Dow Corning TC-5052) is sufficient; no additional insulating pads are needed due to the integrated 152 µm polyimide-based carrier insulator rated for 1.3 W/mK conductivity.

Can this IGBT be paralleled with other units for higher current capacity?

Yes - its positive V_CE(sat) temperature coefficient and matched dynamic parameters enable stable current sharing. Parallel operation requires matched gate drive impedance (< ±5% variation), symmetrical layout, and individual gate resistors. Derating to 85% of total rated current is advised for thermal margin in shared heatsink configurations.

Is the 2500 V_RMS isolation rating certified to any safety standard?

The isolation is tested per IEC 60747-5-2 and UL 1557 requirements for reinforced insulation. It meets EN 61800-5-1 for adjustable speed drives and IEC 62109-1 for PV inverters. Certification documentation is available from Infineon upon request with certificate number 1700001245-UL.