Infineon Technologies IKFW75N65EH5XKSA1

Overview

IKFW75N65EH5XKSA1 from Infineon is a 650 V, 60 A TRENCHSTOP™ 5 advanced isolation IGBT with integrated RAPID 1 antiparallel diode in TO-247 package. It delivers 1.65 V V_CE(sat) at 25°C, 175°C maximum junction temperature, and 2500 V_RMS isolation rating. Used in PFC stages of air conditioning inverters and welding converters where high-speed switching and thermal robustness are critical.

For engineers reviewing the IKFW75N65EH5XKSA1 datasheet, IKFW75N65EH5XKSA1 pinout, IKFW75N65EH5XKSA1 application, or IKFW75N65EH5XKSA1 equivalent, key selection factors include isolated mounting surface validation, soft-recovery diode Q_rr (1.4 µC @ 25°C), gate charge (144 nC), thermal resistance (R_th(j–h) = 0.86 K/W typ.), and turn-off energy (0.60 mJ @ 25°C).

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop technology optimized for hard-switching and resonant topologies up to mid-to-high frequencies (e.g., 20–50 kHz). Its co-packaged RAPID 1 diode provides soft reverse recovery (trr = 75 ns, dirr/dt = −1150 A/µs) and low conduction loss (V_F = 1.45 V @ 60 A, 25°C).

The device integrates full electrical isolation (2500 V_RMS, 1 min) between collector and heatsink via reinforced polyimide carrier, enabling direct mounting without insulating pads. Gate threshold voltage (V_GE(th) = 3.2–4.8 V) and transconductance (g_fs = 72 S) support stable drive across industrial temperature range (−40°C to +175°C).

Key Specifications

Pinout & Package

Package: PG-HSIP247-3-2 (TO-247 variant with isolated mounting base). The package features three terminals: Collector (C), Gate (G), and Emitter (E), with electrically isolated collector tab rated for 2500 V_RMS.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switch applications.

Compared with IKW40N65ES5 and FGH60N60UF, IKFW75N65EH5XKSA1 uniquely combines 650 V rating, 60 A current capability, 2500 V isolation, and soft-recovery diode-enabling simplified mechanical design, reduced BOM count, and higher power density in thermally constrained industrial converters.

Availability

IKFW75N65EH5XKSA1 is available at Aetrix Electronics and suitable for residential air conditioning PFC modules, industrial welding inverters, and mid-frequency UPS inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IKFW75N65EH5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to Infineon's TRENCHSTOP™ 5 Advanced Isolation IGBT product line, engineered specifically for high-efficiency, high-reliability industrial power conversion where galvanic isolation, thermal resilience, and soft-switching behavior are mandatory.

FAQ

What is the maximum allowable gate-emitter voltage for continuous operation?

The IKFW75N65EH5XKSA1 specifies ±20 V as the continuous gate-emitter voltage rating. Transient excursions up to ±30 V are permitted for ≤10 µs with duty cycle <1%, per datasheet Section "Maximum Ratings". Exceeding these limits risks permanent gate oxide damage.

Does the isolated mounting surface require torque-controlled screw installation?

Yes. The datasheet mandates a mounting torque of 0.6 N·m for M3 screws to ensure proper mechanical contact and thermal performance without compromising the isolation barrier. Under-torque increases R_th(j–h); over-torque may fracture the polyimide insulator or deform the copper base.

Can this IGBT replace older TRENCHSTOP™ 4 devices in existing designs?

Yes-it is designed as a plug-and-play replacement for TRENCHSTOP™ 4 IGBTs like IKW40N65EH5, offering lower V_CE(sat), reduced switching losses, and improved diode softness. Pinout and outline are identical; however, gate drive strength must be verified due to 144 nC Q_G being ~12% higher than predecessor.

Is the RAPID 1 diode rated for reverse recovery at 175°C junction temperature?

Yes. At T_vj = 175°C, the diode exhibits trr = 118 ns and Q_rr = 3.4 µC under VR = 400 V, IF = 60 A, and diF/dt = 1000 A/µs. This confirms robust commutation capability across full industrial temperature range without derating.