Infineon Technologies IKFW75N65ES5XKSA1

Overview

IKFW75N65ES5XKSA1 from Infineon is a 650 V, 75 A TRENCHSTOP™ 5 advanced isolation IGBT with integrated RAPID 1 antiparallel diode, optimized for hard and soft switching in resonant and high-frequency converters. It delivers 1.35 V V_CE(sat) at 60 A and 25°C, supports 175°C maximum junction temperature, and features low gate charge (144 nC) and fast switching (t_d(off) = 152 ns at 25°C). Used in industrial UPS and welding inverters requiring robust thermal performance and low conduction losses.

For engineers reviewing the IKFW75N65ES5XKSA1 datasheet, IKFW75N65ES5XKSA1 pinout, IKFW75N65ES5XKSA1 application, or IKFW75N65ES5XKSA1 equivalent, key selection criteria include its isolated TO-247 package, 2500 V_RMS isolation rating, copacked diode's 71 ns trr at 25°C, and thermal resistance of 0.86 K/W (j–heatsink), critical for high-power density designs.

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop technology with optimized carrier lifetime control to achieve simultaneous low V_CE(sat) and fast, soft switching. Its internal structure integrates a full-current-rated RAPID 1 diode with controlled reverse recovery (Q_rr = 1.36 µC, t_rr = 71 ns at 25°C) to minimize voltage overshoot and EMI in bridge configurations.

The device uses an electrically isolated TO-247-3 package (PG-HSIP247-3-2) with backside collector contact and reinforced insulation, enabling direct mounting on heatsinks without additional isolation hardware. Gate drive requirements are standardized: ±20 V DC, with transient tolerance up to ±30 V for 10 µs.

Key Specifications

Pinout & Package

Package: PG-HSIP247-3-2 - Fully isolated TO-247 variant with insulated baseplate, designed for direct heatsink mounting and enhanced creepage/clearance (≥4.2 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Compared with IKW40N65ES5, this part delivers 88% higher continuous current and 2.3× higher pulsed current capability; versus FGH75T65SHD, it eliminates external isolation components and reduces system-level BOM count by two parts while improving thermal reliability.

Availability

IKFW75N65ES5XKSA1 is available at Aetrix Electronics and suitable for industrial uninterruptible power supplies, resonant LLC converters, and welding inverters requiring stable component supply, long-term lifecycle support, and certified isolation compliance.

Supply support for IKFW75N65ES5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to Infineon's TRENCHSTOP™ 5 Advanced Isolation product line, engineered specifically for high-efficiency, high-reliability industrial inverters where electrical isolation, thermal robustness, and soft switching performance are mandatory.

FAQ

What is the maximum allowable gate-emitter voltage for continuous operation?

The IKFW75N65ES5XKSA1 supports ±20 V DC for continuous gate-emitter voltage. Transient conditions allow ±30 V for pulses ≤10 µs with duty cycle ≤1%. Exceeding these limits risks permanent gate oxide damage, especially at elevated junction temperatures above 125°C.

Does the integrated diode require separate gate control or snubbing?

No-this is a passive antiparallel diode monolithically integrated with the IGBT die and shares the same package terminals. It requires no separate gate signal. Snubbing is generally unnecessary due to its soft reverse recovery (71 ns t_rr, 1.36 µC Q_rr) and low dirr/dt, though RC snubbers may still be used in ultra-high-dV/dt applications (>5 kV/µs).

Can this IGBT be used in parallel configurations?

Yes-its positive V_GE(th) temperature coefficient (4.0 V at 25°C, decreasing to 3.2 V at 175°C) enables inherent current sharing. Parallel operation requires matched gate resistors (±5%), symmetrical layout, and shared heatsink mounting to maintain thermal balance across devices.

What is the recommended minimum creepage distance for PCB layout?

For reinforced insulation per IEC 61800-5-1 at 2500 V_RMS, the minimum creepage distance between collector (Pin 2/backside) and gate/emitter (Pins 1/3) must be ≥4.2 mm on FR-4. This is achieved by the package's internal insulation; external PCB traces must maintain this spacing to preserve certification integrity.