Infineon Technologies IKFW90N60EH3XKSA1

Overview

IKFW90N60EH3XKSA1 from Infineon is a 600 V, 75 A TRENCHSTOP™ Advanced Isolation IGBT with integrated Rapid 1 antiparallel diode in a fully isolated TO-247-3 package. It delivers 1.85 V V_CE(sat) at 25°C, 5 µs short-circuit withstand time at 175°C junction temperature, and 2500 V_RMS isolation for industrial power conversion stages including solar string inverters and servo drives.

For engineers reviewing the IKFW90N60EH3XKSA1 datasheet, IKFW90N60EH3XKSA1 pinout, IKFW90N60EH3XKSA1 application, or IKFW90N60EH3XKSA1 equivalent, key selection criteria include its isolated mounting surface, soft fast diode recovery (Q_rr = 1.94 µC at 25°C), and thermal resistance of 0.71 K/W (junction-to-heatsink) under 500 N clamping force.

Technical Context

This IGBT employs TRENCHSTOP™ trench-gate field-stop technology to achieve low conduction loss and positive V_CE(sat) temperature coefficient-enabling inherent current sharing in parallel operation. Its integrated Rapid 1 diode exhibits soft reverse recovery (trr = 107 ns, dirr/dt = −1687 A/µs at 25°C) and low Q_rr, minimizing voltage overshoot and EMI during turn-off.

The device is housed in a PG-TO247-3-AI package with reinforced polyimide-based insulator (152 µm, 1.3 W/mK), enabling direct heatsink mounting without additional isolation hardware. Electrical isolation rating is 2500 V_RMS at 50/60 Hz for 1 minute, validated per JEDEC standards for industrial applications.

Key Specifications

Pinout & Package

Package: PG-TO247-3-AI - Fully isolated TO-247 variant with electrically insulated mounting base and 3-terminal configuration (Collector, Gate, Emitter). Mounting torque: 0.6 Nm (M3 screw); soldering temperature: 260°C for 10 s at 1.6 mm from case.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with IKW40N60H3 and IKFW90N60ES5, the IKFW90N60EH3XKSA1 uniquely combines rated 75 A current handling, integrated isolation, and proven 5 µs short-circuit ruggedness-making it the only drop-in solution for grounded-heatsink industrial inverter platforms requiring both safety certification and thermal headroom.

Availability

IKFW90N60EH3XKSA1 is available at Aetrix Electronics and suitable for solar string inverters, industrial UPS systems, and servo drive output stages requiring stable component supply, long-term lifecycle assurance, and certified isolation performance.

Supply support for IKFW90N60EH3XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to the TRENCHSTOP™ Advanced Isolation series-designed specifically for high-reliability industrial power conversion where electrical isolation, thermal robustness, and short-circuit resilience are non-negotiable.

FAQ

What is the maximum allowable gate-emitter voltage for continuous operation?

The IKFW90N60EH3XKSA1 supports ±20 V DC gate-emitter voltage for continuous operation. Transient ratings allow ±30 V for pulses ≤10 µs with duty cycle <1%. Exceeding these limits risks gate oxide degradation and irreversible threshold shift, especially at elevated junction temperatures above 125°C.

Does the isolated package eliminate the need for thermal interface material?

No-the isolated mounting surface provides electrical insulation only; thermal interface material (TIM) remains mandatory between the tab and heatsink to ensure low R_th(j-h). The specified 0.71 K/W thermal resistance assumes use of standard silicone-based TIM under 500 N clamping force.

Can this IGBT be paralleled with identical units without active current balancing?

Yes-its positive V_CE(sat) temperature coefficient enables inherent current sharing across paralleled devices. However, matched gate drive impedance, symmetrical PCB layout, and identical heatsink contact pressure are required to maintain balance within ±10% current distribution at full load.

What is the recommended gate resistor value for 400 V DC bus operation at 16 kHz switching frequency?

For 400 V bus and 16 kHz operation, a 5 Ω gate resistor (RG(on)/RG(off)) is recommended per the datasheet test condition. This balances switching loss (E_on = 2.65 mJ, E_off = 1.30 mJ at 25°C) against EMI and voltage overshoot, while keeping dV/dt within 5 kV/µs for reliable snubberless operation.