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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKFW90N65ES5XKSA1

Name: IKFW90N65ES5XKSA1
Brand: Infineon Technologies
SKU: IKFW90N65ES5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKFW90N65ES5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKFW90N65ES5XKSA1.pdf

Description:: IGBT TRENCH FS 650V 80A HSIP247

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Product details

Overview

IKFW90N65ES5XKSA1 from Infineon is a 650 V, 75 A TRENCHSTOP™ 5 advanced isolation IGBT with integrated RAPID 1 antiparallel diode, rated for 175 °C junction operation and 2500 V_RMS isolation (50/60 Hz, 1 min). It delivers 1.42 V V_CE(sat) at 75 A and 25 °C, 165 nC total gate charge, and soft 89 ns diode reverse recovery-optimized for high-efficiency welding converters and UPS inverters.

For engineers reviewing the IKFW90N65ES5XKSA1 datasheet, IKFW90N65ES5XKSA1 pinout, IKFW90N65ES5XKSA1 application, or IKFW90N65ES5XKSA1 equivalent, key selection criteria include isolated mounting surface validation, thermal resistance (R_th(j–h) = 0.83–0.98 K/W), switching energy (E_ts = 3.49 mJ @ 25 °C), diode Q_rr = 1.70 µC, and TO-247-3 package mechanical compatibility.

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop technology with optimized carrier lifetime control to achieve low conduction loss and soft switching behavior. Its co-packaged RAPID 1 diode features low Q_rr, controlled dI_rr/dt (−1930 A/µs @ 25 °C), and minimal voltage overshoot during turn-off.

The device integrates full electrical isolation (2500 V_RMS) between collector and mounting base via reinforced polyimide carrier, enabling direct heatsink mounting without additional insulation. Thermal performance is characterized under 500 N clamping force, with R_th(j–h) specified at 0.83 K/W (typ.) for IGBT and 0.94 K/W (typ.) for diode.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE Rating	650 V - Supports DC bus voltages up to 400 V in 3-phase rectified systems with 60 % safety margin.
I_C Continuous	75 A @ T_h = 25 °C - Sustains rated current with standard forced-air heatsinking at ambient-referenced case temperature.
V_CE(sat)	1.42 V @ I_C = 75 A, T_vj = 25 °C - Enables <10 W conduction loss per device at full load, critical for thermal budget in compact converters.
Q_G	165 nC - Determines gate driver power requirement and switching speed trade-off; compatible with standard 2–4 A peak drivers.
trr / Q_rr	89 ns / 1.70 µC @ T_vj = 25 °C - Minimizes diode-induced voltage spikes and EMI in hard-switched topologies.
R_th(j–h)	0.83 K/W (typ.) - Enables 175 °C junction operation with ≤100 °C heatsink temperature under 75 A continuous load.
Isolation Voltage	2500 V_RMS, 50/60 Hz, 1 min - Meets IEC 60950-1 and UL 60950-1 reinforced insulation requirements for industrial safety.

Pinout & Package

Package: PG-HSIP247-3-2 (TO-247 variant with isolated mounting base). The package features three terminals: Collector (C), Gate (G), and Emitter (E), with electrically isolated metal tab connected to collector potential. Mounting torque: 0.6 Nm (M3 screw).

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side power terminal	Connected to DC bus positive; carries full load current and supports 2500 V isolation barrier to heatsink.
Gate (G)	Control input	Receives 15 V drive signal; requires 165 nC charge for full enhancement; threshold V_GE(th) = 4.0 V (typ.) at 25 °C.
Emitter (E)	Power return and reference node	Serves as common source for IGBT and diode; referenced to driver ground; not isolated from heatsink.

Key Features

Feature	Design Value
TRENCHSTOP™ 5 die architecture	Reduces V_CE(sat) by 12 % vs. prior generation while maintaining soft switching and robust short-circuit ruggedness (10 µs @ 175 °C).
RAPID 1 antiparallel diode	Delivers 1.50 V forward drop at 75 A/25 °C and 89 ns trr - enables zero-voltage switching (ZVS) assist in resonant LLC designs.
Advanced isolation structure	100 % tested 2500 V_RMS barrier with reinforced polyimide carrier - eliminates need for insulating washers or silicone pads in assembly.
High-temperature capability	Rated for continuous operation at T_vj = 175 °C - extends lifetime in high-power-density applications where heatsink temperatures exceed 100 °C.
Pb-free RoHS compliance	Lead-free plating on all terminations - meets EU Directive 2011/65/EU and IPC-J-STD-609A Class 1 moisture sensitivity.

Applications

Welding Inverters

Uninterruptible Power Supplies (UPS)

Use Scenario: High-frequency (16–50 kHz) primary-side IGBT bridge in inverter-based arc welding machines requiring rapid current control and thermal resilience.

IC Role / Device Role / Timing Role: Main switching element in full-bridge topology; handles 75 A pulsed output with soft diode recovery to suppress snubber losses.

Use Value: 1.42 V V_CE(sat) and 3.49 mJ total switching energy reduce thermal stress during repetitive 300 A peak load cycles.

Use Scenario: Online double-conversion UPS systems with 400 V DC bus and 50/60 Hz output, demanding high reliability and efficiency across line and battery modes.

IC Role / Device Role / Timing Role: Inverter-stage IGBT in three-phase output stage; operates with 150 °C junction temperature during overload conditions.

Use Value: 175 °C max junction rating and 0.83 K/W R_th(j–h) enable stable 10-year field life at 40 °C ambient with derated heatsink design.

Mid-Frequency SMPS

Resonant Converters (LLC)

Use Scenario: 20–100 kHz switched-mode power supplies for industrial automation, where EMI reduction and efficiency are prioritized over ultra-high frequency.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge configuration; leverages low Q_G for precise PWM timing control.

Use Value: 165 nC gate charge allows use of cost-effective 2 A gate drivers while maintaining <50 ns rise/fall times at 75 A.

Use Scenario: LLC resonant converter in server PSUs or telecom rectifiers operating at 200–500 kHz with ZVS operation.

IC Role / Device Role / Timing Role: Half-bridge leg switch; relies on soft diode recovery to minimize dead-time losses and ringing during ZVS transitions.

Use Value: 1.70 µC Q_rr and −1930 A/µs dI_rr/dt limit reverse recovery current overshoot, reducing MOSFET body diode stress in synchronous rectification stages.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW40N65ES5	Lower current rating (40 A), same 650 V, 1.45 V V_CE(sat), 95 nC Q_G, identical isolation and diode specs.	Targeted at <2 kW systems; reduced thermal mass limits overload capability in welding duty cycles.	Select when board space or cost constraints require smaller die size and lower gate drive power, with verified thermal margin at 40 A.
IKFW90N65EH5	Same 90 A/650 V rating but non-isolated TO-247-3 package; higher V_CE(sat) (1.55 V); no 2500 V isolation; faster diode (trr = 65 ns).	Requires external isolation hardware; suited for designs with existing insulator stacks or lower safety certification tiers.	Choose only if isolation is handled at PCB or heatsink level and system-level creepage/clearance permits non-isolated mounting.

Compared with IKW40N65ES5 and IKFW90N65EH5, the IKFW90N65ES5XKSA1 uniquely combines 75 A continuous current, 2500 V isolation, and soft-switching diode performance-making it the sole option for compact, safety-certified 3–5 kW industrial inverters without added insulation layers or derating.

Availability

IKFW90N65ES5XKSA1 is available at Aetrix Electronics and suitable for uninterruptible power supplies, welding inverters, and mid-frequency SMPS requiring stable component supply, long-term lifecycle support, and certified isolation integrity.

Supply support for IKFW90N65ES5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The TRENCHSTOP™ 5 IGBT product line targets high-efficiency, high-reliability power conversion in industrial motor drives, UPS, welding, and solar inverters-emphasizing low-loss operation, soft switching, and extended temperature capability.

FAQ

What is the maximum allowable gate-emitter voltage for IKFW90N65ES5XKSA1?

The absolute maximum DC gate-emitter voltage is ±20 V; transient pulses up to ±30 V are allowed for durations ≤10 µs with duty cycle <1 %. Exceeding these limits risks permanent gate oxide damage. Recommended operating range is −10 V to +15 V for reliable turn-on/turn-off and noise immunity in noisy industrial environments.

Does IKFW90N65ES5XKSA1 require a negative gate voltage for turn-off?

No, the device is fully functional with 0 V gate drive for turn-off; however, applying −5 V to −10 V improves noise immunity and reduces Miller-induced false turn-on in high-dI/dt applications like welding inverters. The gate threshold voltage is 4.0 V (typ.), so 0 V ensures safe blocking under normal conditions.

How is the 2500 V_RMS isolation verified during manufacturing?

Each unit undergoes 100 % production testing at 2500 V_RMS, 50/60 Hz for 60 seconds between collector and isolated mounting surface. Test compliance follows IEC 60747-5-2 Annex D and Infineon's internal qualification standard Q101-011, with leakage current monitored below 10 µA throughout the test duration.

Can IKFW90N65ES5XKSA1 replace older TRENCHSTOP™ 4 IGBTs in existing designs?

Yes-it is a plug-and-play replacement for IKW90N65ES4 and similar predecessors, sharing identical TO-247-3 footprint, pinout, and voltage/current ratings. Key improvements include 12 % lower V_CE(sat), 20 % lower Q_G, and enhanced diode softness, enabling immediate efficiency gains without layout changes.

IKFW90N65ES5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 300 A

Vce(on) (Max) @ Vge, Ic:: 1.75V @ 15V, 75A

Power - Max:: 154 W

Switching Energy:: 2.5mJ (on), 990µJ (off)

Input Type:: Standard

Gate Charge:: 165 nC

Td (on/off) @ 25°C:: 42ns/151ns

Test Condition:: 400V, 75A, 16Ohm, 15V

Reverse Recovery Time (trr):: 89 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-HSIP247-3-2

IKFW90N65ES5XKSA1 FAQ

1.How can I place an order for IKFW90N65ES5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKFW90N65ES5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKFW90N65ES5XKSA1 reliable?

The price and inventory of IKFW90N65ES5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKFW90N65ES5XKSA1 is usually 5 days.

3.What payment methods are accepted for IKFW90N65ES5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKFW90N65ES5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKFW90N65ES5XKSA1?

IKFW90N65ES5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKFW90N65ES5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKFW90N65ES5XKSA1?

For technical support, including IKFW90N65ES5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKFW90N65ES5XKSA1 requirements.

6.How does Aetrix verify that IKFW90N65ES5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKFW90N65ES5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKFW90N65ES5XKSA1 meets industry standards.

7.What is the process for return or replacement of IKFW90N65ES5XKSA1?

All IKFW90N65ES5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKFW90N65ES5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKFW90N65ES5XKSA1 part is unused and in its original packaging.

Return procedure for IKFW90N65ES5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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