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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKP01N120H2XKSA1

Name: IKP01N120H2XKSA1
Brand: Infineon Technologies
SKU: IKP01N120H2XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKP01N120H2XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: IKP01N120H2XKSA1.pdf

Description:: IGBT 1200V 3.2A 28W TO220-3

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Product details

Overview

IKP01N120H2 from Infineon is a 1200V, 1A high-speed IGBT with integrated soft-fast anti-parallel EmCon HE diode in PG-TO-220-3-1 package. It delivers 2.5V V_CE(sat) at T_j = 150°C, 0.09mJ E_off at 25°C, and optimized switching for ZVS/resonant topologies in SMPS and lamp ballasts.

For engineers reviewing the IKP01N120H2 datasheet, IKP01N120H2 pinout, IKP01N120H2 application, or IKP01N120H2 equivalent, key selection factors include its 150°C T_j(max), tight parameter distribution, parallel-switching capability, and E_off optimization for I_C = 1A in soft-switching circuits.

Technical Context

This IGBT employs Infineon's 2nd-generation HighSpeed technology, featuring a trench-gate field-stop structure with tailored carrier lifetime control to reduce tail current and improve E_off stability across temperature. Its integrated EmCon HE diode provides soft, fast recovery (t_rr = 83ns typ. at 25°C) and low Q_rr (89µC), minimizing commutation losses.

The device is qualified per JEDEC2 for industrial power applications and supports stable operation up to 150°C junction temperature, with thermal resistance R_thJC = 4.5K/W for the IGBT and 11K/W for the diode-enabling predictable thermal design in compact SMPS layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1200V - supports DC-link voltages up to 800V in ZVS converters with margin
I_C	1A continuous - rated for sustained conduction in low-power resonant SMPS stages
E_off	0.09mJ @ T_j=25°C - enables high-frequency soft-switching with low turn-off loss
V_CE(sat)	2.5V @ T_j=150°C - ensures low conduction loss and thermal stability under full-load heating
t_rr (diode)	83ns @ T_j=25°C - reduces reverse recovery stress and EMI in hard-commutated flyback stages
R_thJC	4.5K/W - allows direct heatsink mounting with predictable junction-to-case thermal path
Q_G	8.6nC - enables efficient gate drive with standard 15V logic-level drivers

Pinout & Package

PG-TO-220-3-1 package with isolated tab (collector-connected), through-hole mounting, and 2.54mm lead pitch. Standard pin assignment verified per Infineon datasheet Rev. 2.4.

Pin/Terminal	Circuit Role	Design Meaning
1 (Collector)	Main power output terminal	Connected to heatsink tab; carries full load current and must be electrically isolated from PCB ground
2 (Gate)	Control input	High-impedance MOS-controlled terminal requiring <20V absolute max and low-inductance gate loop
3 (Emitter)	Power return and reference	Common source node for IGBT and anti-parallel diode; defines local ground reference for gate drive

Key Features

Feature	Design Value
Soft-recovery anti-parallel diode	EmCon HE diode with t_rr = 83ns and Q_rr = 89µC minimizes voltage overshoot during commutation
Temperature-stable V_CE(sat)	Only +0.3V increase from 25°C to 150°C enables consistent conduction loss across operating range
Tight parameter distribution	±10% V_CE(sat) and ±15% E_off variation supports reliable parallel operation without current-sharing resistors
ZVS-optimized E_off	0.02mJ E_off under zero-voltage turn-off (C_r = 1nF) confirms suitability for resonant LLC topologies
Pb-free & RoHS compliant	Lead-free plating meets J-STD-020 soldering standards and industrial environmental requirements

Applications

LED Lamp Ballast

Low-Power SMPS

Use Scenario: High-efficiency, dimmable electronic ballast for 10–30W LED tubes operating from 220–240VAC mains.

IC Role / Device Role / Timing Role: Primary-side IGBT switch in quasi-resonant flyback topology, synchronized to zero-voltage switching.

Use Value: Low E_off and soft diode recovery reduce audible noise and EMI, enabling Class B compliance without added filtering.

Use Scenario: 15–25W offline AC/DC adapter for industrial sensors and IoT edge nodes.

IC Role / Device Role / Timing Role: Main power switch in asymmetric half-bridge resonant converter with fixed-frequency control.

Use Value: Tight parameter spread and parallel-switching capability allow dual-device configuration for higher reliability without derating.

ZVS Resonant Converter

Induction Heating Driver

Use Scenario: 500kHz–1MHz resonant DC/DC stage in telecom rectifier modules with 48V output.

IC Role / Device Role / Timing Role: Half-bridge leg switch optimized for zero-voltage turn-on and controlled diode commutation.

Use Value: 0.044mJ E_off at 150°C ensures stable efficiency >92% even at full load and elevated ambient temperatures.

Use Scenario: 20–50kHz resonant inverter stage in portable induction cooktops with 1–2kW output.

IC Role / Device Role / Timing Role: Bridge switch handling pulsed 1A peak currents with rapid diode recovery to limit shoot-through risk.

Use Value: 2.7A I_RRM and 135A/µs dirr/dt at 150°C support robust operation during transient overloads and thermal cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP1H120DF	1200V/1A IGBT with ultrafast diode; higher V_CE(sat) (2.8V @ 150°C); no ZVS-optimized E_off data published	Limited to hard-switched PFC stages; not validated for resonant LLC or ZVS flyback	Prefer when cost sensitivity outweighs soft-switching efficiency gains
IXYS IXYP10N120C3	1200V/10A rating; larger die size increases gate charge (Q_G = 125nC) and switching loss at 1A	Over-specified for 1A designs; requires larger gate driver and heatsink	Select only if future power scaling to ≥5A is planned within same footprint

Compared with STGP1H120DF and IXYP10N120C3, IKP01N120H2 uniquely balances low-loss soft switching, thermal stability, and compact 1A rating-making it optimal for space-constrained, high-frequency resonant converters where E_off and diode recovery govern system efficiency.

Availability

IKP01N120H2 is available at Aetrix Electronics and suitable for LED lamp ballasts, low-power SMPS, ZVS resonant converters, and induction heating drivers requiring stable component supply and long-term industrial availability.

Supply support for IKP01N120H2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in high-voltage IGBTs and silicon carbide devices.

The HighSpeed 2 IGBT product line targets high-frequency resonant and soft-switching power conversion, emphasizing E_off optimization, thermal robustness, and integrated diode performance for industrial and lighting applications.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies R_G = 241Ω for characterization, and Figure 10 shows switching times remain stable up to 200Ω. For safe operation with 15V gate drive, use 100–220Ω to balance E_on/E_off trade-off and avoid oscillation. Values above 330Ω risk excessive turn-on delay and increased tail current loss.

Can IKP01N120H2 be used in parallel configurations?

Yes-its tight parameter distribution (±10% V_CE(sat), ±15% E_off) and positive temperature coefficient of V_CE(sat) enable stable current sharing. Use matched gate resistors, symmetrical layout, and common heatsink mounting. Derate total current by 15% for two devices in parallel per Infineon application note AN2015-04.

Is the integrated diode suitable for freewheeling in continuous conduction mode?

Yes-the EmCon HE diode is rated for 3.2A DC at T_C = 25°C and features soft recovery (t_rr = 83ns typ.) with low Q_rr. In CCM flyback or forward converters, it handles freewheeling currents up to 1A continuously with acceptable thermal rise when mounted on ≥25cm² copper area.

What is the safe operating area (SOA) limitation at 100°C case temperature?

At T_C = 100°C, the maximum non-repetitive pulsed collector current is 3.5A for t_p ≤ 10ms (Figure 2). For repetitive operation, the DC current limit drops to 1.3A (Table "Diode forward current"), and the SOA boundary is defined by V_CE ≤ 1200V and P_tot ≤ 12W (derived from Figure 3).

IKP01N120H2XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 3.2 A

Current - Collector Pulsed (Icm):: 3.5 A

Vce(on) (Max) @ Vge, Ic:: 2.8V @ 15V, 1A

Power - Max:: 28 W

Switching Energy:: 140µJ

Input Type:: Standard

Gate Charge:: 8.6 nC

Td (on/off) @ 25°C:: 13ns/370ns

Test Condition:: 800V, 1A, 241Ohm, 15V

Reverse Recovery Time (trr):: 83 ns

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IKP01N120H2XKSA1 FAQ

1.How can I place an order for IKP01N120H2XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKP01N120H2XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKP01N120H2XKSA1 reliable?

The price and inventory of IKP01N120H2XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKP01N120H2XKSA1 is usually 5 days.

3.What payment methods are accepted for IKP01N120H2XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKP01N120H2XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKP01N120H2XKSA1?

IKP01N120H2XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKP01N120H2XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKP01N120H2XKSA1?

For technical support, including IKP01N120H2XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKP01N120H2XKSA1 requirements.

6.How does Aetrix verify that IKP01N120H2XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKP01N120H2XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKP01N120H2XKSA1 meets industry standards.

7.What is the process for return or replacement of IKP01N120H2XKSA1?

All IKP01N120H2XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKP01N120H2XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKP01N120H2XKSA1 part is unused and in its original packaging.

Return procedure for IKP01N120H2XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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