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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKP03N120H2XKSA1

Name: IKP03N120H2XKSA1
Brand: Infineon Technologies
SKU: IKP03N120H2XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKP03N120H2XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: IKP03N120H2XKSA1.pdf

Description:: IGBT 1200V 9.6A 62.5W TO220-3

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Product details

Overview

IKP03N120H2XKSA1 from Infineon is a 1200 V, 3 A high-speed IGBT with integrated emitter-controlled HE diode in PG-TO-220-3-1 package. It delivers 0.15 mJ turn-off energy at T_j = 25°C, operates up to 150°C junction temperature, and is optimized for ZVS converters and lamp ballasts requiring soft, fast diode recovery and parallel-switching capability.

For engineers reviewing the IKP03N120H2XKSA1 datasheet, IKP03N120H2XKSA1 pinout, IKP03N120H2XKSA1 application, or IKP03N120H2XKSA1 equivalent, key selection criteria include E_off stability across temperature, tight parameter distribution for multi-device designs, and thermal resistance (R_thJC = 2.0 K/W) for conduction-limited thermal management in compact SMPS layouts.

Technical Context

This IGBT uses Infineon's second-generation HighSpeed 2 technology, featuring an integrated anti-parallel emitter-controlled HE diode with 42 ns reverse recovery time (T_j = 25°C) and 125 ns at 150°C. Its gate charge is 22 nC and input capacitance is 205 pF, enabling efficient 140 kHz operation in resonant topologies.

The device supports ZVS operation via low E_off (0.05 mJ at T_j = 25°C with 4 nF snubber) and exhibits temperature-stable V_CE(sat) (2.2–2.8 V across 25–150°C), tight I_C distribution, and qualified JEDEC2 reliability for industrial power conversion.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1200 V - supports DC-link voltages up to 800 V in ZVS converters with margin
I_C	3 A continuous - rated for 9.6 A pulsed (t_p limited by T_jmax) in hard-switched SMPS
E_off	0.15 mJ @ T_j = 25°C - enables high-frequency operation with low switching loss in resonant circuits
R_thJC	2.0 K/W - allows 62.5 W power dissipation at 25°C case temperature
t_rr (diode)	42 ns @ T_j = 25°C - ensures soft, low-noise commutation and reduced EMI in lamp ballasts
Q_g	22 nC - compatible with standard 15 V gate drivers and 82 Ω gate resistors
V_GE(th)	2.1–3.9 V - provides noise-immune turn-on threshold across industrial temperature range

Pinout & Package

IKP03N120H2XKSA1 is housed in a PG-TO-220-3-1 package with isolated mounting base, designed for direct heatsink attachment and high-voltage isolation in offline power stages.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side current path	Connected to DC-link positive; handles full 1200 V blocking and 3 A conduction
Emitter (E)	Reference node for IGBT and diode	Common emitter for both IGBT and anti-parallel HE diode; referenced to driver ground
Gate (G)	Control terminal	Receives ±20 V-rated drive signal; 22 nC charge requires robust gate driver stage

Key Features

Feature	Design Value
HighSpeed 2 Technology	Reduces conduction and switching losses simultaneously via optimized cell layout and carrier lifetime control
Emitter-Controlled HE Diode	Delivers soft, fast recovery (42 ns) with low Q_rr (0.23 µC) to minimize diode-induced voltage overshoot
Parallel Switching Capability	Tight parameter distribution (V_CE(sat), E_off) enables reliable current sharing without external balancing networks
ZVS-Optimized E_off	0.05 mJ at 25°C with 4 nF snubber - reduces tail current and improves efficiency in zero-voltage-switched topologies

Applications

Lamp Ballast Control

SMPS Primary Switch

Use Scenario: Electronic ballast for HID lamps operating at 20–100 kHz with phase-control dimming.

IC Role / Device Role / Timing Role: Main switching device in half-bridge resonant inverter; commutates with integrated HE diode during zero-current switching.

Use Value: Soft diode recovery (42 ns) suppresses voltage spikes during lamp ignition, extending lamp life and reducing EMI filter cost.

Use Scenario: 300–500 W offline flyback or LLC converter for industrial power supplies.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 800 V DC-link; driven at 65–140 kHz with gate resistor tuning.

Use Value: 0.15 mJ E_off and stable R_thJC = 2.0 K/W enable compact heatsink design while maintaining <150°C junction limit under full load.

ZVS Converter Stage

Industrial Motor Drive Inverter

Use Scenario: 1–3 kW resonant DC-DC stage in telecom rectifiers or EV charging systems.

IC Role / Device Role / Timing Role: Low-loss switching element in phase-shifted full-bridge; leverages soft turn-off for ZVS transition.

Use Value: E_off drops to 0.05 mJ with 4 nF snubber, cutting switching loss by >65% versus standard IGBTs at 100 kHz.

Use Scenario: Low-power (<5 kW) variable-frequency drive for pumps and fans.

IC Role / Device Role / Timing Role: Half-bridge leg switch with integrated diode providing freewheeling path during PWM dead-time.

Use Value: Temperature-stable V_CE(sat) (2.2–2.8 V) ensures consistent torque control across -40 to +150°C ambient conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW03N120H2	Same die, PG-TO-247-3 package; R_thJC = 2.0 K/W but higher L_E (13 nH vs. 7 nH)	Better thermal performance in forced-air cooling; higher internal inductance limits ultra-high-frequency ZVS	Select for higher power density where heatsink interface dominates thermal design
STGP3NC120	1200 V/3 A trench-gate IGBT; E_off = 0.22 mJ @ 25°C; no integrated diode	Requires external ultrafast diode; higher switching loss in resonant circuits	Choose when discrete diode selection is preferred for system-level optimization

Compared with IKW03N120H2 and STGP3NC120, IKP03N120H2XKSA1 offers lower parasitic inductance and integrated soft-recovery diode-critical for EMI-sensitive lamp ballasts and compact ZVS converters where board space and component count are constrained.

Availability

IKP03N120H2XKSA1 is available at Aetrix Electronics and suitable for lamp ballasts, SMPS primary stages, ZVS converters, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for IKP03N120H2XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in high-voltage IGBTs and silicon carbide devices.

The HighSpeed 2 IGBT product line targets high-efficiency, high-frequency power conversion systems-including resonant SMPS, lighting, and renewable energy inverters-where low E_off, soft diode recovery, and parallel-switching capability are essential.

FAQ

What is the maximum recommended gate resistor value for reliable switching at 140 kHz?

A gate resistor of 82 Ω is specified in the datasheet for 140 kHz operation with 3 A collector current and 15 V drive. Increasing beyond 100 Ω extends turn-off time and raises E_off; values below 50 Ω risk excessive dI/dt and oscillation due to 7 nH internal emitter inductance.

Does IKP03N120H2XKSA1 require a negative gate voltage for safe turn-off?

No. The device is rated for ±20 V gate-emitter voltage and operates reliably with 0 V turn-off. A negative bias is not required, though -5 V may improve noise immunity in high-dI/dt environments; gate driver must sustain ≤100 nA leakage per the datasheet.

Can this IGBT be paralleled with other IKP03N120H2XKSA1 units without external emitter resistors?

Yes. Tight parameter distribution (V_CE(sat), E_off, t_d(off)) and temperature-stable characteristics enable direct paralleling. Layout symmetry and matched gate drive paths are required; no external emitter resistors are needed per Infineon's application guidance.

What is the safe operating area (SOA) limitation at 100°C case temperature?

At T_C = 100°C, the maximum DC collector current is 3.9 A (per Figure 4), and the pulsed current limit remains 9.9 A (tp limited by T_jmax). The SOA boundary is defined by secondary breakdown, thermal runaway, and bondwire fusing-no derating is needed below 100°C case for 3 A continuous operation.

IKP03N120H2XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 9.6 A

Current - Collector Pulsed (Icm):: 9.9 A

Vce(on) (Max) @ Vge, Ic:: 2.8V @ 15V, 3A

Power - Max:: 62.5 W

Switching Energy:: 290µJ

Input Type:: Standard

Gate Charge:: 22 nC

Td (on/off) @ 25°C:: 9.2ns/281ns

Test Condition:: 800V, 3A, 82Ohm, 15V

Reverse Recovery Time (trr):: 42 ns

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IKP03N120H2XKSA1 FAQ

1.How can I place an order for IKP03N120H2XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKP03N120H2XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKP03N120H2XKSA1 reliable?

The price and inventory of IKP03N120H2XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKP03N120H2XKSA1 is usually 5 days.

3.What payment methods are accepted for IKP03N120H2XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKP03N120H2XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKP03N120H2XKSA1?

IKP03N120H2XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKP03N120H2XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKP03N120H2XKSA1?

For technical support, including IKP03N120H2XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKP03N120H2XKSA1 requirements.

6.How does Aetrix verify that IKP03N120H2XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKP03N120H2XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKP03N120H2XKSA1 meets industry standards.

7.What is the process for return or replacement of IKP03N120H2XKSA1?

All IKP03N120H2XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKP03N120H2XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKP03N120H2XKSA1 part is unused and in its original packaging.

Return procedure for IKP03N120H2XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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