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Infineon Technologies IKP04N60TXKSA1

Part No.:
IKP04N60TXKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-220-3
Datasheet:
AetrixIKP04N60TXKSA1.pdf
Description:
IGBT TRENCH FS 600V 8A TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:164

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Product details

Overview

IKP04N60TXKSA1 from Infineon is a 600 V, 4 A TRENCHSTOP™ IGBT with integrated Emitter Controlled HE diode in PG-TO220-3 package. It delivers 1.5 V typical VCE(sat) at 25°C, 175°C maximum junction temperature, and 5 µs short-circuit withstand time. Designed for frequency converters and motor drives, it combines low conduction loss with soft, fast diode recovery to reduce EMI and system-level snubber requirements.

For engineers reviewing the IKP04N60TXKSA1 datasheet, IKP04N60TXKSA1 pinout, IKP04N60TXKSA1 application, or IKP04N60TXKSA1 equivalent, key selection criteria include its positive VCE(sat) temperature coefficient, 27 nC total gate charge, 145 µJ total switching energy at 25°C, and JEDEC-qualified ruggedness for industrial drive inverters.

Technical Context

This IGBT uses TRENCHSTOP™ and Fieldstop technology optimized for 600 V hard-switching applications. Its monolithic DuoPack integration pairs the IGBT with a soft-recovery anti-parallel diode-eliminating discrete diode layout complexity while maintaining tight parameter distribution and temperature-stable switching behavior across -40°C to +175°C.

The device features a 3.5 K/W IGBT junction-to-case thermal resistance and 5 K/W diode junction-to-case resistance, enabling high-power density in compact TO-220-based inverter half-bridges. Gate threshold voltage (4.1–5.7 V) and transconductance (2.2 S) are tightly controlled to ensure consistent turn-on timing and current sharing in paralleled configurations.

Key Specifications

Parameter Value and Actual Design Meaning
VCE 600 V - Withstands DC bus voltages up to 400 V in 3-phase inverters with 35% overvoltage margin.
IC (DC, TC=25°C) 9.5 A - Enables 4 A continuous output with 2.4× thermal derating headroom at ambient conditions.
VCE(sat) (Tj=25°C) 1.5 V (typ.) - Reduces conduction loss to 6 W at 4 A, critical for efficiency in 1–10 kW drives.
tSC 5 µs - Supports robust short-circuit protection with standard 1–2 µs detection latency in gate drivers.
QG 27 nC - Allows fast switching with moderate 47 Ω gate resistor, balancing EMI and dV/dt stress.
Ets (Tj=25°C) 145 µJ - Total switching energy per cycle enables 20 kHz operation in servo drives without excessive heatsinking.
trr (Tj=25°C) 28 ns - Ultra-fast diode recovery minimizes commutation losses and reverse recovery spikes in inductive loads.

Pinout & Package

Supplied in PG-TO220-3 package: isolated mounting base, through-hole leaded configuration with 2.54 mm pin pitch and 1.6 mm soldering distance from case. Thermal pad electrically connected to collector terminal.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Collector) Main power output node Connected to DC bus high-side; carries full load current and must be routed with low-inductance copper pour.
Pin 2 (Gate) Control input High-impedance MOS gate requiring <100 nF local decoupling and controlled slew rate via series resistor.
Pin 3 (Emitter) Power return and signal reference Shared emitter node for IGBT and integrated diode; requires low-inductance Kelvin connection for accurate current sensing.

Key Features

Feature Design Value
Integrated Emitter Controlled HE diode Soft, fast recovery (trr = 28 ns @ 25°C) eliminates need for external ultrafast diode and reduces layout parasitics.
Positive VCE(sat) temperature coefficient Enables inherent current sharing in paralleled IGBTs without external ballasting resistors.
JEDEC-qualified reliability Complies with J-STD-020 (reflow) and JESD-022 (storage), ensuring long-term stability in industrial environments.
Low EMI generation Controlled dV/dt (via 7.5 pF Cres) and soft switching reduce conducted noise, easing EMC filter design.
Pb-free and RoHS-compliant Meets EU Directive 2011/65/EU; compatible with lead-free reflow profiles up to 260°C for 10 s.

Applications

Industrial Motor Drives Frequency Converters

Use Scenario: 3-phase inverter stage in 0.75–2.2 kW variable-frequency drives for pumps and fans.

IC Role / Device Role / Timing Role: Half-bridge switch controlling PWM-modulated phase voltage; operates at 8–16 kHz switching frequency.

Use Value: 1.5 V VCE(sat) and 145 µJ Ets enable >97% inverter efficiency at full load while maintaining thermal margin at 100°C case temperature.

Use Scenario: Regenerative braking unit in HVAC rooftop units converting excess kinetic energy back to AC line.

IC Role / Device Role / Timing Role: Active rectifier switch in bidirectional AC-DC conversion; handles reverse current during regeneration.

Use Value: Integrated soft-recovery diode supports zero-voltage switching transitions, reducing reverse recovery loss by 40% vs. discrete Si diode solutions.

Servo Amplifiers UPS Inverters

Use Scenario: High-bandwidth torque control stage in CNC machine axis drives requiring precise current regulation.

IC Role / Device Role / Timing Role: Current-source inverter leg operating at 20 kHz with <500 ns dead-time tolerance.

Use Value: 5 µs short-circuit rating allows safe operation under transient overloads without desaturation fault propagation delay.

Use Scenario: Online double-conversion UPS output stage delivering clean 50/60 Hz sine wave to critical IT loads.

IC Role / Device Role / Timing Role: Low-distortion PWM inverter switch with sinusoidal modulation index near 0.9.

Use Value: Tight VCE(sat) distribution (±0.2 V) ensures balanced current sharing across parallel modules, minimizing THD below 2.5%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT-inverter applications.

Alternative Part Technical Difference Application Difference Selection Advice
STGP4H60DL 600 V, 4 A; higher VCE(sat) (1.8 V typ.), longer tSC (10 µs), no integrated diode. Requires external ultrafast diode; better suited for non-regenerative drives where diode recovery is less critical. Select when cost sensitivity outweighs diode integration benefit and thermal margin permits higher conduction loss.
IRG4PH40KD 600 V, 4 A; older Trench IGBT; 2.2 V VCE(sat), 100 nC QG, no soft diode. Limited to <10 kHz operation due to higher switching loss; unsuitable for servo or high-efficiency UPS. Only consider for legacy redesigns where footprint compatibility is mandatory and efficiency targets are relaxed.

Compared with STGP4H60DL and IRG4PH40KD, IKP04N60TXKSA1 provides superior system-level efficiency via integrated soft diode and lower gate charge, enabling higher switching frequencies and reduced EMI filtering-critical for modern compact drive designs.

Availability

IKP04N60TXKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, frequency converters, and UPS inverters requiring stable component supply, long-lifecycle support, and JEDEC-qualified ruggedness.

Supply support for IKP04N60TXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IKP04N60TXKSA1 belongs to the TRENCHSTOP™ Series, engineered specifically for high-efficiency, high-reliability 600 V inverter applications in motor control and power conversion systems.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

A 47 Ω gate resistor is specified in the datasheet for 4 A operation at 175°C junction temperature. Values above 100 Ω increase switching time and energy loss, risking thermal runaway under high-frequency operation. Below 22 Ω may cause gate oscillation or overshoot without proper PCB layout and local decoupling.

Can IKP04N60TXKSA1 be paralleled for higher current capacity?

Yes-its positive VCE(sat) temperature coefficient and tight parameter distribution enable stable current sharing. Use matched gate resistors, symmetrical PCB layout, and Kelvin emitter connections. Derate total current by 15% per additional device beyond two units to maintain thermal balance.

Is the integrated diode rated for continuous freewheeling current?

Yes-the anti-parallel diode shares the same 9.5 A DC current rating as the IGBT at TC = 25°C. Its soft recovery and low Qrr (79 nC @ 25°C) make it suitable for continuous freewheeling in inductive loads without snubber networks.

Does this part require active gate driving for safe operation?

Yes-gate drive must supply ±20 V (per datasheet VGE rating) with peak current ≥2 A to charge/discharge 27 nC within required switching times. Undervoltage lockout (UVLO) below 12 V and desaturation detection are strongly recommended to protect against short circuits.

IKP04N60TXKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TrenchStop®
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
8 A
Current - Collector Pulsed (Icm):
12 A
Vce(on) (Max) @ Vge, Ic:
2.05V @ 15V, 4A
Power - Max:
42 W
Switching Energy:
143µJ
Input Type:
Standard
Gate Charge:
27 nC
Td (on/off) @ 25°C:
14ns/164ns
Test Condition:
400V, 4A, 47Ohm, 15V
Reverse Recovery Time (trr):
28 ns
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3-1

IKP04N60TXKSA1 FAQ

1.How can I place an order for IKP04N60TXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKP04N60TXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKP04N60TXKSA1 reliable?

The price and inventory of IKP04N60TXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKP04N60TXKSA1 is usually 5 days.

3.What payment methods are accepted for IKP04N60TXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKP04N60TXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKP04N60TXKSA1?

IKP04N60TXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKP04N60TXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKP04N60TXKSA1?

For technical support, including IKP04N60TXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKP04N60TXKSA1 requirements.

6.How does Aetrix verify that IKP04N60TXKSA1 is sourced from the original manufacturer or authorized distributors?

All IKP04N60TXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKP04N60TXKSA1 meets industry standards.

7.What is the process for return or replacement of IKP04N60TXKSA1?

All IKP04N60TXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKP04N60TXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKP04N60TXKSA1 part is unused and in its original packaging.

Return procedure for IKP04N60TXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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