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Infineon Technologies IKP10N60TXKSA1

Part No.:
IKP10N60TXKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-220-3
Datasheet:
AetrixIKP10N60TXKSA1.pdf
Description:
IGBT NPT FS 600V 20A TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,277

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Product details

Overview

IKP10N60TXKSA1 from Infineon is a 600 V, 10 A TRENCHSTOP™ IGBT with integrated Emitter Controlled HE diode in PG-TO-220-3 package, designed for high-efficiency switching in variable-speed drives and UPS systems. It delivers 1.5 V typical VCE(sat) at 25°C, 175°C maximum junction temperature, and 5 µs short-circuit withstand time under VGE = 15 V, VCC ≤ 400 V conditions.

For engineers reviewing the IKP10N60TXKSA1 datasheet, IKP10N60TXKSA1 pinout, IKP10N60TXKSA1 application, or IKP10N60TXKSA1 equivalent, key selection criteria include its low conduction loss, soft fast-recovery anti-parallel diode (trr = 115 ns @ 25°C), NPT-based positive VCE(sat) temperature coefficient for parallel operation, and JEDEC1 qualification for industrial motor control and backup power systems.

Technical Context

This IGBT employs Non-Punch-Through (NPT) structure with TRENCHSTOP™ and Fieldstop technology, enabling tight parameter distribution and stable dynamic performance across –40°C to +175°C. Its gate threshold voltage (VGE(th) = 4.1–5.7 V) and transconductance (gfs = 6 S typ.) support robust drive margin and predictable current control in hard-switched topologies.

The integrated Emitter Controlled HE diode features low reverse recovery charge (Qrr = 0.38 µC @ 25°C), low peak reverse recovery current (Irrm = 10 A), and controlled di/dt during recovery (680 A/µs), minimizing voltage overshoot and EMI in inductive loads such as PMSM and induction motor inverters.

Key Specifications

Parameter Value and Actual Design Meaning
VCE 600 V - Maximum blocking voltage for 400 V DC-link applications with 50% safety margin
IC 10 A continuous - Rated output current at TC = 25°C; derates to 18 A at TC = 100°C
VCE(sat) 1.5 V (typ. @ 25°C) - Low conduction loss enables <1.5 W static dissipation at 10 A
tSC 5 µs - Short-circuit ruggedness supports fault handling without desaturation circuitry in cost-sensitive VSDs
QG 62 nC - Moderate gate charge allows efficient driving with standard 1–2 A gate drivers
trr 115 ns (@ 25°C) - Fast, soft diode recovery reduces snubber stress and EMI in bridge-leg commutation
RthJC (IGBT) 1.35 K/W - Enables 110 W total power dissipation at TC = 25°C with minimal heatsink requirement

Pinout & Package

PG-TO-220-3 package: isolated tab (collector), vertical mounting with screw hole, RoHS-compliant Pb-free plating.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Emitter) IGBT emitter terminal Main current return path; referenced to driver ground; connects to source of low-side switch in half-bridge
Pin 2 (Collector) IGBT collector terminal High-side power input node; electrically connected to metal tab; requires isolation from heatsink unless specified
Pin 3 (Gate) IGBT gate control terminal High-impedance MOS-controlled input; requires 15 V drive for full enhancement; sensitive to ESD and ringing

Key Features

Feature Design Value
TRENCHSTOP™ + Fieldstop IGBT structure Enables 600 V rating with 1.5 V VCE(sat) and stable switching energy up to 175°C junction temperature
Emitter Controlled HE diode Soft reverse recovery (trr = 115 ns, Qrr = 0.38 µC) minimizes voltage spikes and reduces snubber losses
NPT-based positive VCE(sat) tempco Ensures inherent current sharing in paralleled IGBTs without external ballasting resistors
JEDEC1 qualification Validated for reliability in washing machine drives, air conditioner inverters, and UPS systems per target application stress profiles
Low EMI design Controlled di/dt (680 A/µs) and optimized internal layout reduce conducted emissions in 10–150 kHz switching range

Applications

Washing Machine Inverter Air Conditioner Compressor Drive

Use Scenario: Three-phase inverter powering brushless DC or PMSM motor in drum wash cycle with variable torque demand.

IC Role / Device Role: High-side IGBT in 6-pack module configuration; switches 400 V DC-link at 8–16 kHz with 50% duty cycle.

Use Value: 1.5 V VCE(sat) and soft diode reduce thermal load on heatsink; 5 µs short-circuit rating supports stall protection without added sensing.

Use Scenario: Inverter-driven scroll compressor operating continuously under ambient temperatures up to 55°C.

IC Role / Device Role: Main switching device in two-level voltage source inverter; handles 10 A RMS output with 175°C max Tj.

Use Value: Stable VCE(sat) over temperature ensures consistent efficiency; NPT structure enables reliable parallel operation for higher capacity units.

Induction Cooking System Online UPS Inverter Stage

Use Scenario: Resonant half-bridge inverter generating 20–50 kHz heating current in cooktop coil.

IC Role / Device Role: Switching element in asymmetrical resonant topology; conducts pulsed current up to 30 A peak.

Use Value: Low gate charge (62 nC) and fast turn-off (tf = 38 ns @ 25°C) enable precise zero-voltage switching timing control.

Use Scenario: Double-conversion online UPS delivering clean 50/60 Hz sine wave during grid outage.

IC Role / Device Role: Output stage IGBT in H-bridge inverter; sustains 100% load for >10 minutes with forced-air cooling.

Use Value: 175°C Tjmax and 1.35 K/W RthJC allow sustained operation at elevated case temperatures without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
IKP20N60T 20 A rated current, same 600 V rating, higher VCE(sat) (1.6 V typ.), identical PG-TO-220-3 package Supports higher output power but requires larger gate driver (QG = 95 nC) and heatsink Select when system needs ≥15 A continuous output and can accommodate increased drive strength and thermal mass
IKP10N65ES5 650 V rating, 1.65 V VCE(sat), enhanced short-circuit capability (8 µs), same footprint Better suited for 450–500 V DC-link designs with stricter fault tolerance requirements Choose for new designs targeting wider input voltage range or extended short-circuit immunity without package change

Compared with IKP20N60T and IKP10N65ES5, the IKP10N60TXKSA1 offers optimal balance of conduction loss, thermal headroom, and gate drive simplicity for cost-sensitive 1–2 kW motor drives where 10 A rating suffices and 600 V blocking is sufficient.

Availability

IKP10N60TXKSA1 is available at Aetrix Electronics and suitable for washing machine inverters, air conditioner compressor drives, and online UPS systems requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IKP10N60TXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The TRENCHSTOP™ IGBT series targets high-efficiency, cost-optimized motor control and power conversion applications-designed to replace legacy planar IGBTs with improved ruggedness, lower losses, and simplified thermal design.

FAQ

What is the maximum allowable gate-emitter voltage for IKP10N60TXKSA1?

The absolute maximum gate-emitter voltage is ±20 V. Operation above +15 V or below –10 V risks permanent gate oxide damage. Recommended drive is +15 V for full enhancement and –5 V to –10 V for reliable turn-off; gate resistor must limit dV/dt-induced current during switching transitions.

Can IKP10N60TXKSA1 be used in parallel configurations?

Yes-its NPT structure provides a positive temperature coefficient in VCE(sat), enabling natural current sharing between paralleled devices without external emitter resistors. Thermal coupling and matched gate drive impedance are required to ensure balanced dynamic current distribution.

Is the integrated diode suitable for freewheeling in hard-switched topologies?

Yes-the Emitter Controlled HE diode is specifically engineered for freewheeling in inductive loads. With trr = 115 ns and soft recovery (low Irrm/dirr/dt), it suppresses voltage overshoot and reduces snubber losses in single-phase and three-phase inverters operating up to 16 kHz.

Does IKP10N60TXKSA1 require an external gate resistor?

Yes-an external gate resistor is mandatory to control switching speed, limit peak gate current, and dampen oscillations. Typical values range from 10 Ω to 47 Ω depending on switching frequency and EMI constraints; 23 Ω is used in Infineon's reference test circuit for 10 A, 400 V inductive load evaluation.

IKP10N60TXKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TrenchStop®
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
IGBT Type:
NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
20 A
Current - Collector Pulsed (Icm):
30 A
Vce(on) (Max) @ Vge, Ic:
2.05V @ 15V, 10A
Power - Max:
110 W
Switching Energy:
430µJ
Input Type:
Standard
Gate Charge:
62 nC
Td (on/off) @ 25°C:
12ns/215ns
Test Condition:
400V, 10A, 23Ohm, 15V
Reverse Recovery Time (trr):
115 ns
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3-1

IKP10N60TXKSA1 FAQ

1.How can I place an order for IKP10N60TXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKP10N60TXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKP10N60TXKSA1 reliable?

The price and inventory of IKP10N60TXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKP10N60TXKSA1 is usually 5 days.

3.What payment methods are accepted for IKP10N60TXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKP10N60TXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKP10N60TXKSA1?

IKP10N60TXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKP10N60TXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKP10N60TXKSA1?

For technical support, including IKP10N60TXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKP10N60TXKSA1 requirements.

6.How does Aetrix verify that IKP10N60TXKSA1 is sourced from the original manufacturer or authorized distributors?

All IKP10N60TXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKP10N60TXKSA1 meets industry standards.

7.What is the process for return or replacement of IKP10N60TXKSA1?

All IKP10N60TXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKP10N60TXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKP10N60TXKSA1 part is unused and in its original packaging.

Return procedure for IKP10N60TXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IKP10N60TXKSA1 Tags

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