Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IKP20N60TAHKSA1

Part No.:
IKP20N60TAHKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-220-3
Datasheet:
AetrixIKP20N60TAHKSA1.pdf
Description:
IGBT 600V 40A 166W TO220-3-1
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,478

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IKP20N60TAHKSA1 from Infineon is a 600 V, 20 A TRENCHSTOP™ IGBT with integrated Emitter Controlled HE diode in PG-TO220-3 package, featuring 1.5 V typical VCE(sat) at 25°C, 5 µs short-circuit withstand time at 15 V gate drive, and 175°C maximum junction temperature-designed for frequency converters and UPS inverters.

For engineers reviewing the IKP20N60TAHKSA1 datasheet, IKP20N60TAHKSA1 pinout, IKP20N60TAHKSA1 application, or IKP20N60TAHKSA1 equivalent, key selection criteria include VCE(sat) stability over temperature, soft diode recovery (trr = 41 ns @ 25°C), gate charge (120 nC), thermal resistance (RthJC = 0.9 K/W), and JEDEC1 qualification for industrial power conversion.

Technical Context

This IGBT employs TRENCHSTOP™ and Fieldstop technology to achieve tight parameter distribution, high ruggedness, and temperature-stable switching behavior up to 175°C junction temperature. Its positive VCE(sat) temperature coefficient enables inherent current sharing in parallel operation.

The integrated anti-parallel diode is an Emitter Controlled HE type with soft, fast recovery (trr = 41 ns typ. @ 25°C, 176 ns @ 175°C) and low Qrr (0.31 µC typ. @ 25°C), minimizing switching losses and EMI in hard-switched topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VCE600 V - supports DC bus voltages up to 400 V in 3-phase inverters with 50% voltage margin
IC20 A continuous - rated for 20 A at TC = 25°C, derates to 28 A at TC = 100°C
VCE(sat)1.5 V (typ. @ 25°C), 1.9 V (typ. @ 175°C) - low conduction loss with stable thermal behavior
tSC5 µs - enables robust short-circuit protection with gate driver fault response < 2 µs
QG120 nC - determines gate drive power requirement and influences switching speed control
RthJC0.9 K/W - allows 166 W total power dissipation at TC = 25°C with minimal thermal bottleneck
trr / Qrr41 ns / 0.31 µC (@ 25°C) - reduces turn-on loss of companion IGBT and limits voltage overshoot

Pinout & Package

PG-TO220-3 package with isolated mounting base, standard through-hole footprint, and 1.5 mm creepage/clearance per IEC 60664-1. Pin assignment verified per Infineon datasheet Rev. 2.8.

Pin/TerminalCircuit RoleDesign Meaning
Collector (C)Main power output terminalConnected to DC bus high side; carries full load current and must be routed with low-inductance layout
Gate (G)Control inputRequires 12–15 V drive with low-impedance path; internal RG not specified but external RG = 12 Ω used in characterization
Emitter (E)Power return and reference nodeServes as common reference for both IGBT and anti-parallel diode; critical for gate loop integrity and noise immunity

Key Features

FeatureDesign Value
Low VCE(sat) with positive tempcoEnables parallel operation without current imbalance and reduces conduction loss across operating temperature range
Soft, fast-recovery anti-parallel diodeMinimizes reverse recovery stress on IGBT during commutation, lowering Eoff and dv/dt-induced EMI
5 µs short-circuit withstand capabilitySupports reliable hardware-level fault handling in motor drives and UPS without requiring ultra-fast desat detection
JEDEC1 qualificationValidated for industrial applications including frequency converters and uninterruptible power supplies under real-world thermal cycling
Pb-free, RoHS-compliant platingMeets environmental compliance requirements for global OEM production and eliminates lead-based solder compatibility concerns

Applications

Industrial Motor DrivesUninterruptible Power Supplies

Use Scenario: Three-phase inverter stage in 3–7.5 kW variable-frequency drives for pumps and fans.

IC Role / Device Role / Timing Role: Main switching device in 2-level inverter leg, operating at 4–16 kHz with sinusoidal PWM.

Use Value: Low VCE(sat) and soft diode reduce system-level conduction and switching losses by ~12% versus prior-generation 600 V IGBTs.

Use Scenario: Inverter output stage in online double-conversion UPS systems delivering clean 50/60 Hz sine wave.

IC Role / Device Role / Timing Role: High-side switch in H-bridge output stage, handling bidirectional energy flow during battery backup mode.

Use Value: 175°C Tjmax and 5 µs tSC ensure sustained overload tolerance during grid failure events without thermal shutdown.

Solar String InvertersInduction Heating Systems

Use Scenario: DC–AC stage in single-phase transformerless string inverters for residential PV installations.

IC Role / Device Role / Timing Role: Half-bridge switch operating at 16–20 kHz with unipolar modulation to minimize filter size.

Use Value: Tight VCE(sat) distribution ensures consistent efficiency across production batches, supporting ±0.5% power tolerance certification.

Use Scenario: Full-bridge inverter in 20–50 kW resonant induction heating generators for metal forging.

IC Role / Device Role / Timing Role: Hard-switched power switch operating at 20–40 kHz with high di/dt (>500 A/µs).

Use Value: Low Ets (1.15 mJ @ 175°C) and soft diode recovery limit voltage spikes and snubber losses in high-Q tank circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT-in-DuoPack applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IKP20N60TSame die, identical electrical specs; differs only in packaging marking (no 'A' suffix or 'HKSA1' suffix)No functional difference; HKSA1 denotes specific tape-and-reel packaging and traceability for automotive-adjacent industrial programsSelect IKP20N60TAHKSA1 when full lot traceability, RoHS+REACH documentation, or AEC-Q101-aligned process controls are required
FGH20N60UFDHigher VCE(sat) (1.7 V typ.), longer tSC (10 µs), no integrated diode - requires external ultrafast diodeBetter suited for higher-voltage, lower-frequency applications where diode integration is not neededChoose only if external diode selection provides better trr/Qrr trade-off than integrated HE diode, or if higher tSC margin is prioritized over conduction loss

Compared with IKP20N60T, the HKSA1 variant adds enhanced traceability and process controls without altering performance; versus FGH20N60UFD, it trades off external diode flexibility for lower system BOM count, reduced layout complexity, and guaranteed matched diode characteristics.

Availability

IKP20N60TAHKSA1 is available at Aetrix Electronics and suitable for frequency converters, uninterruptible power supplies, and solar inverters requiring stable component supply, long-term lifecycle support, and industrial-grade reliability.

Supply support for IKP20N60TAHKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The TRENCHSTOP™ IGBT series targets medium-power industrial inverters and UPS systems, emphasizing low-loss operation, rugged short-circuit behavior, and integrated diode optimization for hard-switched topologies.

FAQ

What is the maximum allowable gate-emitter voltage for IKP20N60TAHKSA1?

The absolute maximum gate-emitter voltage is ±20 V DC. Operation above +15 V or below –10 V risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for active Miller clamping during turn-off to prevent false triggering.

Does IKP20N60TAHKSA1 require a negative gate voltage for reliable operation?

No negative gate voltage is required for basic functionality, but applying –5 V to –10 V during turn-off significantly improves noise immunity and prevents spurious turn-on due to Miller-induced dv/dt coupling, especially in high-di/dt applications like motor drives.

How does the integrated diode differ from standard FRD or SBD alternatives?

The Emitter Controlled HE diode features soft reverse recovery (trr = 41 ns @ 25°C) with low Qrr and controlled Irrm, reducing voltage overshoot and EMI compared to fast recovery diodes. Unlike Schottky diodes, it sustains 600 V blocking and operates reliably up to 175°C junction temperature.

Can IKP20N60TAHKSA1 be paralleled for higher current capacity?

Yes-its positive VCE(sat) temperature coefficient enables stable current sharing. Successful parallel operation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling via shared heatsink. Derate total current by 15% versus sum of individual ratings for safety margin.

IKP20N60TAHKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TrenchStop®
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Not For New Designs
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
40 A
Current - Collector Pulsed (Icm):
60 A
Vce(on) (Max) @ Vge, Ic:
2.05V @ 15V, 20A
Power - Max:
166 W
Switching Energy:
770µJ
Input Type:
Standard
Gate Charge:
120 nC
Td (on/off) @ 25°C:
18ns/199ns
Test Condition:
400V, 20A, 12Ohm, 15V
Reverse Recovery Time (trr):
41 ns
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3-1

IKP20N60TAHKSA1 FAQ

1.How can I place an order for IKP20N60TAHKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKP20N60TAHKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKP20N60TAHKSA1 reliable?

The price and inventory of IKP20N60TAHKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKP20N60TAHKSA1 is usually 5 days.

3.What payment methods are accepted for IKP20N60TAHKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKP20N60TAHKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKP20N60TAHKSA1?

IKP20N60TAHKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKP20N60TAHKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKP20N60TAHKSA1?

For technical support, including IKP20N60TAHKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKP20N60TAHKSA1 requirements.

6.How does Aetrix verify that IKP20N60TAHKSA1 is sourced from the original manufacturer or authorized distributors?

All IKP20N60TAHKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKP20N60TAHKSA1 meets industry standards.

7.What is the process for return or replacement of IKP20N60TAHKSA1?

All IKP20N60TAHKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKP20N60TAHKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKP20N60TAHKSA1 part is unused and in its original packaging.

Return procedure for IKP20N60TAHKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IKP20N60TAHKSA1 Tags

  • IKP20N60TAHKSA1
  • IKP20N60TAHKSA1 PDF
  • IKP20N60TAHKSA1 Datasheet
  • IKP20N60TAHKSA1 Specifications
  • IKP20N60TAHKSA1 Images
  • Infineon Technologies
  • Infineon Technologies IKP20N60TAHKSA1
  • Buy IKP20N60TAHKSA1
  • IKP20N60TAHKSA1 Price
  • IKP20N60TAHKSA1 Distributor
  • IKP20N60TAHKSA1 Supplier
  • IKP20N60TAHKSA1 Wholesale
Related Products
STGD3NB60SDT4
STGD3NB60SDT4

STMicroelectronics

HGTD1N120BNS9A
HGTD1N120BNS9A

onsemi

STGF7NB60SL
STGF7NB60SL

STMicroelectronics

FGD5T120SH
FGD5T120SH

onsemi

STGB3NC120HDT4
STGB3NC120HDT4

STMicroelectronics

IKP20N60TXKSA1
IKP20N60TXKSA1

Infineon Technologies

STGW30H60DFB
STGW30H60DFB

STMicroelectronics

STGB30M65DF2
STGB30M65DF2

STMicroelectronics

IKB20N60TATMA1
IKB20N60TATMA1

Infineon Technologies

STGB30V60DF
STGB30V60DF

STMicroelectronics

IKW30N60DTPXKSA1
IKW30N60DTPXKSA1

Infineon Technologies

ISL9V3040P3
ISL9V3040P3

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER