Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKP20N65F5XKSA1

Name: IKP20N65F5XKSA1
Brand: Infineon Technologies
SKU: IKP20N65F5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IKP20N65F5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: IKP20N65F5XKSA1.pdf

Description:: IGBT TRENCH 650V 42A TO220-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:347

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IKP20N65F5XKSA1 from Infineon is a 650V, 20A high-speed TRENCHSTOP™ 5 IGBT copacked with a RAPID 1 fast/soft antiparallel diode in a PG-TO220-3 package. It delivers 1.6V V_CE(sat) at 20A and 25°C, supports 175°C maximum junction temperature, and achieves 53ns diode reverse recovery time at 10A/400V - enabling efficient hard-switching in solar inverters and UPS systems.

For engineers reviewing the IKP20N65F5XKSA1 datasheet, IKP20N65F5XKSA1 pinout, IKP20N65F5XKSA1 application, or IKP20N65F5XKSA1 equivalent, key selection criteria include its low 48nC gate charge, 1.2K/W IGBT junction-to-case thermal resistance, soft diode recovery behavior, and JEDEC-qualified reliability for industrial power conversion designs.

Technical Context

This DuoPack device integrates an IGBT and antiparallel diode in a single TO-220-3 housing, eliminating external diode layout complexity and parasitic inductance. The TRENCHSTOP 5 IGBT cell structure enables reduced conduction and switching losses simultaneously, while the RAPID 1 diode provides controlled reverse recovery with low Q_rr (0.28µC) and softness factor (I_rrm/I_F ≈ 1.05).

It operates across -40°C to +175°C junction range, rated for 650V blocking and 42A DC collector current at 25°C case temperature. Switching performance is characterized under standardized 400V/10A inductive load conditions with 32Ω gate resistor, yielding 0.22mJ total switching energy at 25°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650V - Enables use in 400V DC bus systems with 1.6× safety margin against transients.
I_C	20A continuous - Rated output current for 1–3kW industrial converters at 100°C case temperature.
V_CE(sat)	1.6V at 20A/25°C - Directly reduces conduction loss to ~32W per device at full load.
Q_G	48nC - Determines gate driver power requirement and influences turn-on speed with 32Ω R_G.
t_rr (diode)	53ns at 10A/400V - Limits voltage overshoot and EMI during freewheeling in bridge-leg configurations.
R_th(j-c) (IGBT)	1.2K/W - Enables 63W power dissipation at 100°C case without exceeding 175°C junction limit.
E_ts	0.22mJ at 10A/400V - Quantifies total switching loss per cycle, critical for thermal design at >20kHz operation.

Pinout & Package

PG-TO220-3 package with isolated mounting flange; standard through-hole footprint compatible with manual soldering and wave soldering (260°C, 10s). Pin 1 = Gate, Pin 2 = Collector, Pin 3 = Emitter.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	IGBT Gate	Controls IGBT conduction; requires ±20V absolute max rating and 48nC charge for full turn-on.
Pin 2 (C)	IGBT Collector / Diode Cathode	High-side connection point; carries main power current and must be routed with low-inductance layout.
Pin 3 (E)	IGBT Emitter / Diode Anode	Common reference node for gate drive and current sensing; ties to power ground plane.

Key Features

Feature	Design Value
TRENCHSTOP™ 5 IGBT die	Reduces V_CE(sat) and switching loss trade-off - achieves 1.6V saturation with 0.22mJ E_ts at 10A.
RAPID 1 antiparallel diode	Soft reverse recovery (I_rrm/I_F = 1.05) minimizes voltage spikes and snubber stress in H-bridge topologies.
JEDEC-qualified reliability	Validated for industrial lifetime requirements including 1000-cycle temperature cycling and 1000h HTOL at 175°C.
Pb-free RoHS-compliant plating	Meets EU Directive 2011/65/EU; compatible with lead-free reflow and wave soldering processes.

Applications

Solar String Inverters

Uninterruptible Power Supplies

Use Scenario: DC–AC inversion stage in 2–5kW photovoltaic string inverters operating at 16–25kHz switching frequency.

IC Role / Device Role / Timing Role: Main switch in two-level or three-level NPC inverter leg; handles bidirectional current via integrated diode during freewheeling.

Use Value: Low 53ns t_rr and soft recovery reduce EMI filter size by 30% versus older diodes; 175°C rating supports compact heatsink design.

Use Scenario: Online double-conversion UPS output stage delivering clean 50/60Hz sine wave with <1% THD.

IC Role / Device Role / Timing Role: IGBT in full-bridge inverter; integrated diode provides low-loss commutation path during PWM dead-time intervals.

Use Value: 48nC Q_G enables fast, low-loss switching with standard 2A gate drivers; 1.2K/W R_th(j-c) allows 63W dissipation at 100°C case.

Industrial Welding Converters

Mid-Frequency Induction Heaters

Use Scenario: Primary-side inverter in IGBT-based inverter welders operating at 10–20kHz with high peak current demands.

IC Role / Device Role / Timing Role: High-current switching element in resonant or hard-switched inverter; diode conducts reverse current during arc ignition phase.

Use Value: 60A pulsed collector current rating supports 3× overload peaks; 175°C junction rating maintains reliability during intermittent high-duty cycles.

Use Scenario: Half-bridge inverter driving 20–100kHz resonant tank in induction heating systems for metal hardening and brazing.

IC Role / Device Role / Timing Role: Fast-switching power switch with integrated diode for zero-voltage switching (ZVS) assistance during resonant transitions.

Use Value: Low 5nH internal emitter inductance improves ZVS timing accuracy; 0.28µC Q_rr reduces diode switching loss by 40% vs. standard FRDs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT + diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKP20N65ES5XKSA1	Same 650V/20A rating but uses TRENCHSTOP™ 5 Enhanced Speed (ES5) die - lower V_CE(sat) (1.5V) but higher Q_G (62nC) and slower t_f (22ns vs. 17ns).	Better conduction efficiency at low switching frequencies (<10kHz); less suitable for >25kHz due to increased gate drive loss.	Select when optimizing for lowest conduction loss in medium-frequency UPS or motor drives where gate drive capability is ample.
FGA20N65SHDTU	650V/20A discrete IGBT + separate ultrafast diode; higher V_CE(sat) (1.7V), no integrated packaging - requires external diode layout and adds 15–20nH stray inductance.	Higher system-level EMI and layout complexity; requires additional PCB area and thermal interface management for diode.	Choose only when existing board layout cannot accommodate TO-220-3 DuoPack footprint or when diode replacement flexibility is required.

Compared with IKP20N65ES5XKSA1, this part trades 0.1V higher V_CE(sat) for 14nC lower Q_G, improving gate drive efficiency above 15kHz; versus FGA20N65SHDTU, it eliminates layout-induced diode ringing and reduces bill-of-materials count by one component.

Availability

IKP20N65F5XKSA1 is available at Aetrix Electronics and suitable for solar converters, uninterruptible power supplies, and welding converters requiring stable component supply, JEDEC-qualified reliability, and high-temperature operational margin.

Supply support for IKP20N65F5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to Infineon's TRENCHSTOP™ 5 High-Speed IGBT series, engineered specifically for high-efficiency, high-frequency industrial power conversion where simultaneous optimization of conduction loss, switching loss, and diode softness is critical.

FAQ

What is the maximum allowable gate-emitter voltage for IKP20N65F5XKSA1?

The absolute maximum transient gate-emitter voltage is ±30V for pulses ≤10µs with duty cycle <1%. Continuous operation must remain within ±20V. Exceeding these limits risks permanent gate oxide damage, especially at elevated junction temperatures above 125°C.

Does IKP20N65F5XKSA1 require a negative gate voltage for reliable turn-off?

No. The device turns off fully with 0V gate drive due to its 4.8V maximum V_GE(th). However, applying –5V to –10V during off-state improves noise immunity and prevents spurious turn-on in high-dV/dt environments such as multi-level inverters or high-power motor drives.

How does the integrated RAPID 1 diode differ from standard ultrafast diodes in terms of recovery behavior?

The RAPID 1 diode exhibits soft reverse recovery with low peak reverse current (I_rrm = 10.5A at 10A forward current) and controlled di/dt (–235A/µs), reducing voltage overshoot and EMI. Standard ultrafast diodes typically show harder recovery with higher I_rrm/I_F ratios (>1.3) and uncontrolled current collapse.

Can IKP20N65F5XKSA1 be used in parallel configurations?

Yes - its positive V_CE(sat) temperature coefficient (increasing from 1.6V at 25°C to 1.9V at 175°C) enables natural current sharing. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling via shared heatsink to maintain <10°C junction temperature difference between devices.

IKP20N65F5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 42 A

Current - Collector Pulsed (Icm):: 60 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 20A

Power - Max:: 125 W

Switching Energy:: 160µJ (on), 60µJ (off)

Input Type:: Standard

Gate Charge:: 48 nC

Td (on/off) @ 25°C:: 20ns/165ns

Test Condition:: 400V, 10A, 32Ohm, 15V

Reverse Recovery Time (trr):: 53 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IKP20N65F5XKSA1 FAQ

1.How can I place an order for IKP20N65F5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKP20N65F5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKP20N65F5XKSA1 reliable?

The price and inventory of IKP20N65F5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKP20N65F5XKSA1 is usually 5 days.

3.What payment methods are accepted for IKP20N65F5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKP20N65F5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKP20N65F5XKSA1?

IKP20N65F5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKP20N65F5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKP20N65F5XKSA1?

For technical support, including IKP20N65F5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKP20N65F5XKSA1 requirements.

6.How does Aetrix verify that IKP20N65F5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKP20N65F5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKP20N65F5XKSA1 meets industry standards.

7.What is the process for return or replacement of IKP20N65F5XKSA1?

All IKP20N65F5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKP20N65F5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKP20N65F5XKSA1 part is unused and in its original packaging.

Return procedure for IKP20N65F5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…