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Infineon Technologies IKP20N65H5XKSA1

Part No.:
IKP20N65H5XKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-220-3
Datasheet:
AetrixIKP20N65H5XKSA1.pdf
Description:
IGBT TRENCH 650V 42A TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,228

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Product details

Overview

IKP20N65H5XKSA1 from Infineon is a 650V, 20A high-speed TRENCHSTOP™ 5 IGBT copacked with a RAPID 1 fast/soft anti-parallel diode in PG-TO220-3 package. It delivers 1.65V VCE(sat) at 20A/25°C, 175°C max junction temperature, and 48nC total gate charge for hard-switching and resonant topologies in solar converters and UPS systems.

For engineers reviewing the IKP20N65H5XKSA1 datasheet, IKP20N65H5XKSA1 pinout, IKP20N65H5XKSA1 application, or IKP20N65H5XKSA1 equivalent, key selection criteria include its low switching energy (0.06mJ Eoff @ 2A), soft diode recovery (Qrr = 0.11µC @ 2A), and JEDEC-qualified 175°C operation in industrial power control designs.

Technical Context

This IGBT uses TRENCHSTOP™ 5 trench-gate field-stop structure with optimized carrier lifetime control to achieve best-in-class conduction–switching trade-off. Its integrated RAPID 1 diode features tailored minority-carrier lifetime for low Qrr and soft reverse recovery (dIrr/dt = –660 A/µs @ 2A).

The device operates with 15V gate drive (recommended ≥7.5V), supports 60A pulsed collector current, and maintains safe operating area up to 650V with 1.2 K/W IGBT junction-to-case thermal resistance-enabling compact heatsink design in mid-to-high-frequency converters.

Key Specifications

Parameter Value and Actual Design Meaning
VCE 650V - Enables use in 400V DC bus systems with 50% voltage margin for transient clamping.
IC 20A continuous - Rated for 21A at 100°C case temperature, supporting sustained 1–2kW power stages.
VCE(sat) 1.65V @ 20A/25°C - Reduces conduction loss to ~33W at full load, critical for thermal management.
QG 48nC - Enables efficient 32Ω gate drive at 400V/10A switching with <200ns total propagation delay.
Eoff 0.02mJ @ 2A - Low turn-off loss supports >100kHz operation without excessive snubber dissipation.
trr (diode) 24ns @ 2A - Minimizes commutation loss and EMI in bridge-leg configurations with fast di/dt.
Rth(j-c) (IGBT) 1.2 K/W - Allows 63W power dissipation at 100°C case, simplifying thermal interface design.

Pinout & Package

PG-TO220-3 package with isolated mounting flange, 0.6 Nm M3 screw torque rating, and wave-solderable leads (260°C/10s). Pin 1 = Gate, Pin 2 = Collector, Pin 3 = Emitter.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Gate) Control terminal for IGBT channel Receives 15V logic-level drive; 100nA leakage ensures stable off-state under noise.
Pin 2 (Collector) Main high-side power output node Connected to DC bus; rated for 650V blocking and 60A pulsed current.
Pin 3 (Emitter) Power return and diode cathode reference Serves as common emitter for IGBT and anode for integrated RAPID 1 diode.

Key Features

Feature Design Value
High-speed H5 trench technology Reduces Ets to 0.06mJ @ 2A, enabling >100kHz hard-switching without active snubbers.
Integrated RAPID 1 anti-parallel diode Delivers soft recovery (dIrr/dt = –660 A/µs) and low Qrr (0.11µC), minimizing cross-conduction loss.
175°C maximum junction temperature Extends usable thermal headroom by 25°C vs. legacy 150°C parts, improving reliability in sealed enclosures.
Pb-free RoHS-compliant plating Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1), eliminating pre-bake requirements for SMT assembly.
JEDEC qualification Validated for industrial power control per JESD47 stress testing, including HTGB and uHAST.

Applications

Solar DC-AC Inverters Uninterruptible Power Supplies (UPS)

Use Scenario: Three-phase string inverters converting 600–1000V DC to 230V AC at 16–20kHz switching frequency.

IC Role / Device Role / Timing Role: Half-bridge IGBT switch with integrated freewheeling diode handling bidirectional reactive power flow.

Use Value: Low VCE(sat) and soft diode recovery reduce thermal stress on heatsinks and improve system efficiency above 98.5%.

Use Scenario: Online double-conversion UPS delivering clean 50/60Hz sine wave during grid outage with <10ms transfer time.

IC Role / Device Role / Timing Role: Inverter-stage switching element in full-bridge topology managing battery-to-AC conversion.

Use Value: 175°C rating enables derating-free operation in fanless UPS chassis; low Eoff minimizes battery drain during extended backup.

Industrial Welding Converters Mid-Frequency Induction Heaters

Use Scenario: IGBT-based inverter supplying 1–5kHz square-wave current to welding transformer with 50–300A output.

IC Role / Device Role / Timing Role: Primary-side switch controlling duty cycle and current ramp rate in resonant LLC or phase-shifted ZVS topologies.

Use Value: Fast turn-on (15ns td(on)) and low QG enable precise arc initiation timing; robust SOA supports repetitive short-circuit events.

Use Scenario: 20–100kHz resonant tank driver for induction heating of metal components in manufacturing lines.

IC Role / Device Role / Timing Role: High-frequency half-bridge switch synchronizing with zero-voltage switching to minimize switching loss.

Use Value: Optimized Cies/Cres ratio (1200pF / 5pF) improves gate drive efficiency and reduces dv/dt-induced false triggering.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part Technical Difference Application Difference Selection Advice
IKP20N65ES5XKSA1 Same 650V/20A rating but uses TRENCHSTOP™ 5 Enhanced Speed (ES5) silicon; lower VCE(sat) (1.55V) but higher QG (62nC). Better conduction loss at high ambient temperatures; less suitable for >100kHz due to increased gate drive demand. Select when thermal budget is constrained and switching frequency ≤50kHz.
FGH20N60UFD 600V/20A, TO-247 package; higher VCE(sat) (1.8V) but lower Eoff (0.015mJ @ 2A) and faster tf (11ns). Superior high-frequency performance but lacks integrated diode-requires external ultrafast diode. Select when discrete diode optimization is needed and board space allows TO-247 footprint.

Compared with IKP20N65ES5XKSA1 and FGH20N60UFD, IKP20N65H5XKSA1 offers the optimal balance of low gate charge, integrated soft-recovery diode, and 650V rating-making it preferred for cost-sensitive, space-constrained solar and UPS inverters requiring plug-and-play replacement.

Availability

IKP20N65H5XKSA1 is available at Aetrix Electronics and suitable for solar converters, uninterruptible power supplies, and welding converters requiring stable component supply across multi-year production cycles.

Supply support for IKP20N65H5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D centers.

This part belongs to the TRENCHSTOP™ 5 High-Speed IGBT series, engineered specifically for industrial power conversion systems demanding high efficiency, soft switching, and long-term reliability at elevated junction temperatures.

FAQ

What is the maximum recommended gate resistor value for reliable switching at 100kHz?

A 32Ω gate resistor is validated in the datasheet for 400V/10A inductive loads with 15V drive, yielding 156ns td(off) and 0.06mJ Eoff. Increasing beyond 47Ω risks exceeding safe dv/dt limits and increasing Eon; values below 15Ω require careful PCB layout to avoid ringing.

Does the integrated RAPID 1 diode support synchronous rectification in buck-derived topologies?

No-the RAPID 1 diode is optimized as an anti-parallel freewheeling device in bridge legs, not as a controlled synchronous rectifier. Its VF (1.45V @ 10A) and lack of gate control prevent use in synchronous rectification; external MOSFETs are required for that function.

Can IKP20N65H5XKSA1 operate safely at 175°C junction temperature with 100% rated current?

No-continuous 20A operation is only rated at TC = 25°C. At 100°C case temperature, max IC drops to 21A, and at 175°C junction temperature, the device must be derated to ≤10A to maintain reliability and SOA compliance per Figure 3.

Is the PG-TO220-3 package electrically isolated between collector and mounting flange?

Yes-the PG-TO220-3 package features electrically isolated collector tab (Pin 2), allowing direct heatsink mounting without insulating pads. The isolation withstands ≥2500V RMS per IEC 60747-9, verified during production Hi-Pot testing.

IKP20N65H5XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TrenchStop™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
IGBT Type:
Trench
Voltage - Collector Emitter Breakdown (Max):
650 V
Current - Collector (Ic) (Max):
42 A
Current - Collector Pulsed (Icm):
60 A
Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 20A
Power - Max:
125 W
Switching Energy:
170µJ (on), 60µJ (off)
Input Type:
Standard
Gate Charge:
48 nC
Td (on/off) @ 25°C:
18ns/156ns
Test Condition:
400V, 10A, 32Ohm, 15V
Reverse Recovery Time (trr):
52 ns
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3

IKP20N65H5XKSA1 FAQ

1.How can I place an order for IKP20N65H5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKP20N65H5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKP20N65H5XKSA1 reliable?

The price and inventory of IKP20N65H5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKP20N65H5XKSA1 is usually 5 days.

3.What payment methods are accepted for IKP20N65H5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKP20N65H5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKP20N65H5XKSA1?

IKP20N65H5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKP20N65H5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKP20N65H5XKSA1?

For technical support, including IKP20N65H5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKP20N65H5XKSA1 requirements.

6.How does Aetrix verify that IKP20N65H5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKP20N65H5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKP20N65H5XKSA1 meets industry standards.

7.What is the process for return or replacement of IKP20N65H5XKSA1?

All IKP20N65H5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKP20N65H5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKP20N65H5XKSA1 part is unused and in its original packaging.

Return procedure for IKP20N65H5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IKP20N65H5XKSA1 Tags

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