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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKP28N65ES5XKSA1

Name: IKP28N65ES5XKSA1
Brand: Infineon Technologies
SKU: IKP28N65ES5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKP28N65ES5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: IKP28N65ES5XKSA1.pdf

Description:: IGBT 650V 28A TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IKP28N65ES5 from Infineon is a 650 V, 28 A TRENCHSTOP™ 5 high-speed soft-switching IGBT with integrated full-rated RAPID 1 anti-parallel diode in PG-TO220-3 package, optimized for industrial SMPS, UPS, and welding inverters requiring low conduction loss (V_CE(sat) = 1.5 V @ 25°C), fast switching (t_d(off) = 184 ns), and 175°C junction operation.

For engineers reviewing the IKP28N65ES5 datasheet, IKP28N65ES5 pinout, IKP28N65ES5 application, or IKP28N65ES5 equivalent, this device delivers verified trade-offs between switching speed, E_off (0.40 mJ), diode Q_rr (0.60 µC), thermal resistance (R_th(j-c) = 1.20 K/W), and ruggedness in hard/soft-switching topologies.

Technical Context

This IGBT employs Infineon's 5th-generation TRENCHSTOP™ trench-gate field-stop structure with optimized carrier lifetime control to achieve simultaneous low V_CE(sat) and fast, soft turn-off-critical for ZVS/ZCS resonant converters and high-frequency industrial inverters. Its co-packaged RAPID 1 diode features low Q_rr, controlled reverse recovery, and matched thermal behavior.

The device operates up to 175°C junction temperature with robust short-circuit withstand time (not specified in datasheet but qualified per JEDEC JESD47/20/22), and supports gate drive with ±20 V transient rating and low Q_G (50 nC) for efficient 15 V gate control under high dv/dt conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - Withstands DC bus voltages up to 400 V in 3-phase rectified systems with 50% safety margin.
I_C	28 A continuous @ T_c = 100°C - Sustains rated load current with standard heatsink mounting at industrial ambient temperatures.
V_CE(sat)	1.50 V @ I_C = 28 A, T_vj = 25°C - Enables <1.5 W conduction loss at full load, reducing heatsink size vs. older IGBTs.
E_off	0.40 mJ @ V_CC = 400 V, I_C = 28 A - Low turn-off energy supports >50 kHz switching in hard-switched PFC and inverter stages.
Q_rr (diode)	0.60 µC @ T_vj = 25°C - Minimizes diode-induced voltage overshoot and snubber losses in bridge-leg commutation.
R_th(j-c)	1.20 K/W - Enables direct thermal coupling to heatsink with predictable junction-to-case delta-T under steady-state power dissipation.
t_d(off)	184 ns @ T_vj = 25°C - Supports precise timing control in synchronous rectification and phase-shifted full-bridge topologies.

Pinout & Package

PG-TO220-3 package with isolated tab (collector connected to case), standard through-hole mounting, M3 screw torque limit 0.6 Nm, wave solderable up to 260°C for 10 s at 1.6 mm from case.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Emitter)	IGBT emitter terminal	Low-inductance return path for main current; connects to source of driving MOSFET or low-side shunt.
Pin 2 (Collector)	IGBT collector terminal	High-current output node tied to heatsink; electrically connected to metal tab for thermal conduction.
Pin 3 (Gate)	IGBT gate control input	High-impedance control node requiring <50 nC charge; sensitive to noise-requires local RC snubber and Kelvin connection.

Key Features

Feature	Design Value
High-speed soft switching	Controlled tail current decay and low E_ts (0.93 mJ) reduce EMI and enable >50 kHz operation without excessive snubbing.
Integrated RAPID 1 diode	Full 28 A rated anti-parallel diode with soft recovery (trr = 73 ns) and low Q_rr, eliminating discrete diode placement and thermal mismatch.
175°C maximum junction temperature	Enables compact thermal design in sealed enclosures and high-ambient environments like welders and UPS cabinets.
Low Q_G (50 nC)	Reduces gate driver power demand and allows use of cost-effective 1–2 A peak drivers instead of high-current alternatives.
Pb-free, RoHS-compliant plating	Meets global environmental compliance requirements for industrial equipment without compromising solder joint reliability.

Applications

Industrial SMPS

Uninterruptible Power Supplies (UPS)

Use Scenario: High-efficiency 3 kW telecom rectifier operating at 100 kHz with phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Main switch in primary-side inverter stage, handling 400 V DC bus and delivering regulated 54 V output.

Use Value: Low V_CE(sat) and E_off reduce conduction and switching losses by ~18% vs. prior-gen IGBTs, enabling 96.2% peak efficiency.

Use Scenario: Online double-conversion UPS with 10 kVA output, battery backup, and active harmonic filtering.

IC Role / Device Role / Timing Role: Inverter leg switch converting DC link to clean 230 V AC output; synchronized to grid reference via DSP.

Use Value: Soft-switching capability and matched diode recovery minimize voltage spikes during zero-crossing transitions, reducing filter capacitor stress.

Induction Welding Inverters

Energy Storage System (ESS) Bi-directional Converters

Use Scenario: 20 kHz resonant inverter powering copper seam welder with dynamic load modulation.

IC Role / Device Role / Timing Role: Half-bridge switch controlling resonant tank current; subjected to repetitive short-circuit events during arc initiation.

Use Value: 175°C rating and JEDEC-qualified ruggedness allow sustained operation under 10 ms overload pulses without derating.

Use Scenario: 500 V DC bi-directional DC/DC converter interfacing Li-ion battery stack with 400 V DC microgrid.

IC Role / Device Role / Timing Role: Primary-side switch in dual-active-bridge (DAB) topology, conducting both forward and reverse power flow.

Use Value: Symmetrical diode recovery (Q_rr = 0.60 µC / 0.40 µC at 14/28 A) ensures balanced switching losses in bidirectional operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP28N65FD	650 V, 28 A, V_CE(sat) = 1.6 V, E_off = 0.52 mJ, no integrated diode (requires external)	Requires separate ultrafast diode; higher system BOM count and layout complexity	Prefer when discrete diode selection is needed for custom recovery tuning or higher voltage blocking.
IXYS IXYP20N65C5	650 V, 20 A, V_CE(sat) = 1.65 V, E_off = 0.38 mJ, integrated diode with Q_rr = 0.75 µC	Lower current rating limits use to ≤1.5 kW designs; higher Q_rr increases diode loss in high-di/dt bridges	Choose for space-constrained 1–1.5 kW SMPS where lower gate charge (42 nC) eases driver design.

Compared with STGP28N65FD and IXYP20N65C5, the IKP28N65ES5 uniquely combines full-rated co-packaged diode, lowest V_CE(sat), and industry-leading softness-making it optimal for high-power density, high-reliability industrial inverters where system-level efficiency and EMI are critical.

Availability

IKP28N65ES5 is available at Aetrix Electronics and suitable for industrial SMPS, uninterruptible power supplies (UPS), and induction welding inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up.

Supply support for IKP28N65ES5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The TRENCHSTOP™ 5 series targets high-efficiency, high-reliability industrial power conversion-including motor drives, UPS, welding, and solar inverters-by balancing switching speed, conduction loss, and ruggedness in a single die architecture.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG(on)/RG(off) = 34 Ω for characterization, and recommends keeping total gate loop inductance below 30 nH. For 15 V gate drive, RG ≤ 47 Ω maintains safe dv/dt (<10 V/ns) and avoids oscillation, while RG ≥ 10 Ω ensures adequate turn-on speed. Higher values increase switching losses and risk shoot-through in half-bridge configurations.

Can IKP28N65ES5 be used in parallel configurations?

Yes-its positive V_CE(sat) temperature coefficient (1.85 V @ 175°C) enables natural current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual gate resistors (≤10% tolerance). Derate total current by 15% and ensure ΔT_j ≤ 5°C between devices using thermal vias and shared heatsink interface.

Is the TO220-3 package electrically isolated?

No-the metal tab is internally connected to the collector terminal. Electrical isolation requires insulating mounting hardware (e.g., silicone pad + ceramic washer) and verification of creepage/clearance distances per IEC 60950-1. The package is thermally optimized but not electrically isolated by default.

Does the integrated diode support reverse conduction in bidirectional topologies?

Yes-the RAPID 1 diode is rated for full 28 A forward current and exhibits symmetric recovery characteristics (Q_rr = 0.60 µC @ 28 A, trr = 73 ns), making it suitable for bidirectional DAB and matrix converter applications where reverse conduction occurs during each switching cycle.

IKP28N65ES5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™ 5

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 38 A

Current - Collector Pulsed (Icm):: 90 A

Vce(on) (Max) @ Vge, Ic:: 1.9V @ 15V, 28A

Power - Max:: 130 W

Switching Energy:: 530µJ (on), 400µJ (off)

Input Type:: Standard

Gate Charge:: 50 nC

Td (on/off) @ 25°C:: 27ns/184ns

Test Condition:: 400V, 28A, 34Ohm, 15V

Reverse Recovery Time (trr):: 73 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IKP28N65ES5XKSA1 FAQ

1.How can I place an order for IKP28N65ES5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKP28N65ES5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKP28N65ES5XKSA1 reliable?

The price and inventory of IKP28N65ES5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKP28N65ES5XKSA1 is usually 5 days.

3.What payment methods are accepted for IKP28N65ES5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKP28N65ES5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKP28N65ES5XKSA1?

IKP28N65ES5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKP28N65ES5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKP28N65ES5XKSA1?

For technical support, including IKP28N65ES5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKP28N65ES5XKSA1 requirements.

6.How does Aetrix verify that IKP28N65ES5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKP28N65ES5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKP28N65ES5XKSA1 meets industry standards.

7.What is the process for return or replacement of IKP28N65ES5XKSA1?

All IKP28N65ES5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKP28N65ES5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKP28N65ES5XKSA1 part is unused and in its original packaging.

Return procedure for IKP28N65ES5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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