Infineon Technologies IKP30N65F5XKSA1

Overview

IKP30N65F5XKSA1 from Infineon is a 650 V, 30 A high-speed TRENCHSTOP™ 5 IGBT copacked with a RAPID 1 fast/soft antiparallel diode in a PG-TO220-3 package. It delivers 1.6 V V_CE(sat) at 30 A and 25°C, 175°C max junction temperature, and 65 nC total gate charge-enabling efficient hard-switching in solar inverters and UPS systems.

For engineers reviewing the IKP30N65F5XKSA1 datasheet, IKP30N65F5XKSA1 pinout, IKP30N65F5XKSA1 application, or IKP30N65F5XKSA1 equivalent, key selection criteria include its low switching energy (0.11 mJ E_ts @ 5 A), soft diode recovery (55 ns trr @ 25°C), and JEDEC-qualified industrial reliability for mid-to-high-frequency power conversion.

Technical Context

This DuoPack device integrates an IGBT and antiparallel diode in a single TO-220-3 housing, eliminating external diode layout complexity. Its TRENCHSTOP™ 5 trench-gate structure reduces conduction and switching losses simultaneously, while the RAPID 1 diode features controlled reverse recovery with <14.4 A peak I_rrm and –820 A/µs di/dt capability at 5 A.

The IGBT operates with a 4.0 V typical V_GE(th), enabling robust gate drive margin, and supports 15 V nominal gate voltage with ±20 V DC and ±30 V transient rating. Thermal design is enabled by validated R_th(j–c) of 0.80 K/W (IGBT) and 1.80 K/W (diode), supporting high-power density layouts up to 175°C junction operation.

Key Specifications

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab, screw-mount compatible). Pin assignment verified per Infineon package drawing PG-TO220-3 rev. 2013-09.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT + diode DuoPack applications.

Compared with IKP20N65F5XKSA1 and IKP40N65F5XKSA1, the IKP30N65F5XKSA1 provides optimal balance of conduction loss, switching energy, and thermal capacity for 2–4 kW industrial converters-avoiding overdesign or thermal risk at typical 25–35 A RMS loads.

Availability

IKP30N65F5XKSA1 is available at Aetrix Electronics and suitable for solar converters, uninterruptible power supplies, and welding converters requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IKP30N65F5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The TRENCHSTOP™ 5 series was engineered specifically for high-efficiency, high-frequency industrial power conversion-targeting solar inverters, UPS, and welding equipment where low-loss switching and integrated diode performance are critical.

FAQ

What is the maximum recommended gate resistor value for IKP30N65F5XKSA1 in a 20 kHz solar inverter?

The datasheet specifies RG(on)/RG(off) = 23 Ω for standardized switching characterization. At 20 kHz, a 15–22 Ω gate resistor balances switching speed and gate oscillation suppression. Lower values (<10 Ω) increase dV/dt stress and EMI; higher values (>33 Ω) raise E_on and thermal load. Layout parasitics must be minimized regardless of R_G choice.

Does IKP30N65F5XKSA1 require a negative gate voltage for safe turn-off?

No. The device is rated for V_GE = 0 V to +15 V operation, with no requirement for negative bias. Its 4.0 V typical V_GE(th) and low leakage (≤100 nA IGES) ensure robust noise immunity at 0 V gate hold. Negative voltage is not needed unless system-level EMI or shoot-through risk demands extra margin beyond datasheet conditions.

Can IKP30N65F5XKSA1 replace older TRENCHSTOP™ 4 IGBTs in existing designs?

Yes-pin-compatible with IKP30N65F4XKSA1 and electrically backward-compatible. Key improvements include 15% lower E_off, 0.1 V lower V_CE(sat), and enhanced diode softness. Existing gate drivers and heatsinks typically remain valid, but layout review for reduced EMI and updated thermal margins is recommended.

What is the meaning of "DuoPack" in IKP30N65F5XKSA1's product description?

DuoPack denotes Infineon's monolithic integration of one IGBT die and one RAPID 1 diode die in a single PG-TO220-3 package, sharing a common collector terminal. This eliminates discrete diode placement, reduces PCB area, lowers stray inductance, and ensures matched thermal behavior-critical for bridge-leg reliability and EMI control.