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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKP30N65H5XKSA1

Name: IKP30N65H5XKSA1
Brand: Infineon Technologies
SKU: IKP30N65H5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKP30N65H5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: IKP30N65H5XKSA1.pdf

Description:: IGBT TRENCH 650V 55A TO220-3

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Product details

Overview

IKP30N65H5XKSA1 from Infineon is a 650V, 30A high-speed TRENCHSTOP™ 5 IGBT copacked with a RAPID 1 fast/soft antiparallel diode in PG-TO220-3 package. It delivers 1.65V V_CE(sat) at 30A/25°C, 70nC total gate charge, and 175°C max junction temperature, enabling efficient hard-switching operation in solar inverters and UPS systems.

For engineers reviewing the IKP30N65H5XKSA1 datasheet, IKP30N65H5XKSA1 pinout, IKP30N65H5XKSA1 application, or IKP30N65H5XKSA1 equivalent, key selection criteria include switching energy (0.38mJ total at 15A/400V), diode reverse recovery performance (51ns trr at 15A/25°C), thermal resistance (0.80K/W j-c), and JEDEC-qualified reliability for industrial power control.

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop structure optimized for low conduction and switching losses simultaneously. Its integrated RAPID 1 diode features soft recovery (dirr/dt = –403 A/µs) and low Q_rr (0.41 µC), minimizing voltage overshoot and EMI in bridge-leg configurations.

The device operates across –40°C to +175°C junction range with ±20V DC and ±30V transient gate rating. Switching behavior is characterized under standardized 400V/15A inductive load conditions using 23Ω gate resistors, supporting design of mid-to-high-frequency (20–100 kHz) converters without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650V - supports DC-link voltages up to 450V in 3-phase inverters with 1.4× safety margin
I_C	30A continuous - rated for 55A at 25°C case, derates to 35A at 100°C case for thermal design
V_CE(sat)	1.65V @ 30A/25°C - reduces conduction loss to ~49.5W at full current, critical for efficiency
Q_G	70nC - enables fast turn-on/off with moderate gate drive strength (e.g., 2A peak)
E_ts	0.38mJ @ 15A/400V/25°C - defines total switching loss per cycle in hard-switched topologies
trr	51ns @ 15A/400V/25°C - limits diode commutation stress and reduces turn-on loss of complementary switch
R_th(j-c)	0.80K/W (IGBT), 1.80K/W (diode) - determines heatsink sizing for each die independently

Pinout & Package

PG-TO220-3 package with isolated mounting flange, 3-pin through-hole configuration. Pin 1: Gate (G), Pin 2: Collector (C), Pin 3: Emitter (E). Diode anode internally connected to emitter; cathode to collector.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Controls IGBT conduction; requires ≥7.5V threshold (V_GE(th) = 3.2–4.8V) and ≤±20V operating range
Pin 2 (C)	Collector terminal	High-side power node; connects to DC-link positive; hosts integrated diode cathode
Pin 3 (E)	Emitter terminal	Power return path; connects to diode anode and gate driver reference; carries full load current

Key Features

Feature	Design Value
TRENCHSTOP™ 5 technology	Reduces V_CE(sat) and E_off simultaneously versus prior generations, enabling higher efficiency at 20–50 kHz
RAPID 1 antiparallel diode	Soft reverse recovery (I_rrm = 14.3A, dirr/dt = –403 A/µs) suppresses voltage spikes during freewheeling
175°C maximum junction temperature	Enables compact thermal design and extended lifetime in high-ambient environments (e.g., enclosed UPS cabinets)
JEDEC qualification	Validated for industrial power applications including solar, UPS, and welding-no requalification needed
Pb-free RoHS compliance	Meets global environmental regulations; compatible with standard wave-soldering (260°C, 10s)

Applications

Solar String Inverters

Uninterruptible Power Supplies

Use Scenario: DC-to-AC conversion in 3–10 kW residential string inverters with MPPT tracking.

IC Role / Device Role / Timing Role: Half-bridge IGBT switch in H-bridge output stage; handles 20–30 kHz PWM with sinusoidal current shaping.

Use Value: Low E_ts (0.38 mJ) and soft diode recovery reduce filter size and improve THD <3% at full load.

Use Scenario: Online double-conversion UPS delivering clean 50/60 Hz sine wave during grid failure.

IC Role / Device Role / Timing Role: Inverter-stage switch in 3-phase IGBT bridge; operates at 8–16 kHz with zero-voltage switching assist.

Use Value: 175°C rating allows derated operation at 125°C case temp, extending capacitor life and system MTBF.

Industrial Welding Converters

Mid-Frequency Induction Heaters

Use Scenario: Inverter-based arc welding equipment requiring precise current control and fast response.

IC Role / Device Role / Timing Role: Primary-side switch in resonant LLC or phase-shifted full-bridge topology; switches at 20–100 kHz.

Use Value: Low Q_G (70 nC) enables fast current ramp control (<100 ns rise time), improving arc stability.

Use Scenario: Solid-state induction heating systems for metal hardening and brazing (10–50 kW).

IC Role / Device Role / Timing Role: High-current half-bridge switch driving series-resonant tank; operates at 25–80 kHz.

Use Value: Integrated RAPID 1 diode eliminates need for external ultrafast diodes, reducing BOM count and layout area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKP20N65H5	20A rated current, lower E_ts (0.22 mJ @ 10A), same V_CE(sat) and package	Better suited for <5 kW designs where thermal margin exceeds requirement	Select when system current stays below 20A RMS and board space constraints favor identical footprint
IKP40N65H5	40A rated current, higher P_tot (220W), same die technology and diode	Required for >6 kW systems or forced-air-cooled designs needing headroom	Choose when peak load currents exceed 30A or junction temperature must remain <150°C under worst-case ambient

Compared with IKP20N65H5 and IKP40N65H5, the IKP30N65H5XKSA1 provides optimal balance of conduction loss, switching loss, and thermal capability for 3–6 kW industrial converters-avoiding overdesign while maintaining 20% current margin at 100°C case.

Availability

IKP30N65H5XKSA1 is available at Aetrix Electronics and suitable for solar converters, uninterruptible power supplies, and welding converters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IKP30N65H5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D infrastructure.

The TRENCHSTOP™ 5 IGBT product line targets high-efficiency industrial power conversion, emphasizing low-loss switching, robust short-circuit ruggedness, and seamless upgrade paths from earlier generations.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off?

The datasheet specifies RG(off) = 23Ω for characterization. For reliable turn-off with minimal tail current, use 15–25Ω with a 15V gate drive. Higher values (>33Ω) increase td(off) and E_off disproportionately-especially above 150°C junction temperature-due to slower V_GE decay.

Can IKP30N65H5XKSA1 replace IKP30N65H3 in existing designs?

Yes-this is a documented plug-and-play replacement. The H5 generation improves E_off by 25% and reduces V_CE(sat) by 0.05V versus H3, with identical pinout, package, and gate threshold. No layout or gate drive changes are required, though thermal margin improves due to lower losses.

Is the integrated diode suitable for synchronous rectification?

No-the RAPID 1 diode is optimized for antiparallel freewheeling, not unidirectional conduction. Its forward voltage (1.35V) and soft recovery are not designed for synchronous rectifier duty; dedicated SiC Schottky or MOSFETs are preferred for that role.

What is the short-circuit withstand time at 400V and 150°C?

Per Infineon's application note AN2015-05, the device sustains short-circuit conditions for 2.5 µs at V_CE = 400V, T_vj = 150°C, and V_GE = 15V before entering destructive second breakdown-consistent with industrial IGBT standards for motor drives and UPS protection schemes.

IKP30N65H5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 55 A

Current - Collector Pulsed (Icm):: 90 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 30A

Power - Max:: 188 W

Switching Energy:: 280µJ (on), 100µJ (off)

Input Type:: Standard

Gate Charge:: 70 nC

Td (on/off) @ 25°C:: 19ns/177ns

Test Condition:: 400V, 15A, 23Ohm, 15V

Reverse Recovery Time (trr):: 51 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IKP30N65H5XKSA1 FAQ

1.How can I place an order for IKP30N65H5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKP30N65H5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKP30N65H5XKSA1 reliable?

The price and inventory of IKP30N65H5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKP30N65H5XKSA1 is usually 5 days.

3.What payment methods are accepted for IKP30N65H5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKP30N65H5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKP30N65H5XKSA1?

IKP30N65H5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKP30N65H5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKP30N65H5XKSA1?

For technical support, including IKP30N65H5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKP30N65H5XKSA1 requirements.

6.How does Aetrix verify that IKP30N65H5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKP30N65H5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKP30N65H5XKSA1 meets industry standards.

7.What is the process for return or replacement of IKP30N65H5XKSA1?

All IKP30N65H5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKP30N65H5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKP30N65H5XKSA1 part is unused and in its original packaging.

Return procedure for IKP30N65H5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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