Infineon Technologies IKP39N65ES5XKSA1

Overview

IKP39N65ES5XKSA1 from Infineon is a 650 V, 39 A TRENCHSTOP™ 5 high-speed soft-switching IGBT with integrated full-rated RAPID 1 anti-parallel diode in PG-TO220-3 package. It delivers 1.45 V V_CE(sat) at 25°C, 70 nC total gate charge, and 84 ns diode reverse recovery time at 25°C - optimized for industrial SMPS, welding inverters, and UPS systems requiring low conduction and switching losses.

For engineers reviewing the IKP39N65ES5XKSA1 datasheet, IKP39N65ES5XKSA1 pinout, IKP39N65ES5XKSA1 application, or IKP39N65ES5XKSA1 equivalent, key selection criteria include V_CE(sat) stability across 25–175°C, diode Q_rr of 0.85 µC at 25°C, thermal resistance R_th(j-c) = 0.80 K/W, and validated operation up to T_vj = 175°C in hard- and soft-switching topologies.

Technical Context

This IGBT employs Infineon's 5th-generation TRENCHSTOP™ S5 trench-gate field-stop structure, enabling high-speed switching with soft turn-off characteristics and minimal tail current. Its co-packaged RAPID 1 diode features low Q_rr (0.85 µC), fast trr (84 ns), and controlled dirr/dt (−320 A/µs) to reduce voltage overshoot and EMI in inductive loads.

The device operates with ±20 V DC and ±30 V transient gate-emitter voltage ratings, supports 120 A pulsed collector current, and maintains stable V_CE(sat) (1.70 V @ 175°C) and g_fs = 40 S - critical for predictable gain and thermal runaway immunity in high-reliability industrial converters.

Key Specifications

Pinout & Package

Delivered in PG-TO220-3 package with isolated mounting flange, standard through-hole footprint, and M3 screw torque rating of 0.6 Nm. Pin assignment follows industry-standard TO-220 layout: Pin 1 = Gate, Pin 2 = Collector, Pin 3 = Emitter.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Compared with IKP20N65ES5 and IKP40N65ES5, the IKP39N65ES5XKSA1 offers optimal balance of current rating, conduction loss, and gate drive efficiency for 20–30 kW industrial converters - avoiding overdesign while maintaining thermal safety margin at 175°C.

Availability

IKP39N65ES5XKSA1 is available at Aetrix Electronics and suitable for industrial SMPS, welding inverters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for IKP39N65ES5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

The TRENCHSTOP™ 5 series targets high-efficiency, high-reliability industrial power conversion - specifically engineered for soft-switching topologies, high-temperature operation, and integrated diode performance in motor drives, SMPS, and renewable energy inverters.

FAQ

What is the maximum allowable gate-emitter voltage for continuous operation?

The IKP39N65ES5XKSA1 supports ±20 V DC gate-emitter voltage for continuous operation. Transient conditions allow ±30 V for pulses ≤10 µs with duty cycle <1%. Exceeding these limits risks gate oxide breakdown or threshold shift, especially at elevated junction temperatures above 125°C.

Does this IGBT require negative gate voltage for reliable turn-off?

No, the device achieves robust turn-off with 0 V gate drive due to its low Miller capacitance (C_res = 7 pF) and high transconductance (g_fs = 40 S). However, applying −5 V to −10 V improves noise immunity in high-dv/dt environments and reduces cross-conduction risk in bridge configurations.

How does the integrated RAPID 1 diode differ from standard FRD counterparts?

The RAPID 1 diode features tailored lifetime control yielding 0.85 µC Q_rr and 84 ns t_rr at 25°C - significantly lower than typical fast recovery diodes (Q_rr > 2 µC). Its soft recovery characteristic (dirr/dt = −320 A/µs) suppresses voltage overshoot and reduces snubber requirements in hard-switched applications.

Can this device be used in parallel configurations?

Yes, the IKP39N65ES5XKSA1 supports paralleling due to positive V_CE(sat) temperature coefficient (1.70 V @ 175°C vs. 1.45 V @ 25°C), ensuring current sharing stability. Successful implementation requires matched gate resistors, symmetrical layout, and individual emitter degeneration resistors to mitigate dynamic imbalance.