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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKP40N65F5XKSA1

Name: IKP40N65F5XKSA1
Brand: Infineon Technologies
SKU: IKP40N65F5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKP40N65F5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: IKP40N65F5XKSA1.pdf

Description:: IGBT 650V 74A TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IKP40N65F5XKSA1 from Infineon is a 650V, 40A high-speed TRENCHSTOP™ 5 IGBT copacked with a RAPID 1 fast and soft antiparallel diode in PG-TO220-3 package. It delivers 1.6V V_CE(sat) at 40A and 25°C, supports 175°C maximum junction temperature, and enables hard-switching and resonant topologies in solar converters and UPS systems.

For engineers reviewing the IKP40N65F5XKSA1 datasheet, IKP40N65F5XKSA1 pinout, IKP40N65F5XKSA1 application, or IKP40N65F5XKSA1 equivalent, key selection criteria include its low Q_G (95 nC), fast switching (t_d(off) = 160 ns typ.), soft diode recovery (Q_rr = 0.45 µC), thermal robustness (R_th(j-c) = 0.60 K/W), and JEDEC-qualified industrial reliability.

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop structure for reduced conduction and switching losses, optimized for mid-to-high-frequency (20–100 kHz) power conversion. Its integrated RAPID 1 diode features low reverse recovery charge and soft recovery behavior to minimize voltage overshoot and EMI.

The device operates with gate-emitter voltage range ±20 V (DC) / ±30 V (transient), supports pulsed collector current up to 120 A, and maintains stable V_CE(sat) across –40°C to +175°C junction temperature range-critical for thermally demanding industrial inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - Withstands DC bus voltages up to 650 V in solar string inverters and UPS DC-link stages.
I_C	40 A continuous - Supports rated output power in 3–5 kW industrial converters with forced-air cooling.
V_CE(sat)	1.6 V @ 40 A, 25°C - Reduces conduction loss to ~64 W at full load, improving system efficiency over prior generations.
Q_G	95 nC - Enables fast turn-on with moderate gate drive strength (e.g., 15 Ω resistor), lowering driver cost and complexity.
t_d(off)	160 ns typ. - Allows switching frequencies ≥50 kHz while maintaining safe SOA margins in hard-switched PFC and inverter stages.
trr / Q_rr	60 ns / 0.45 µC @ 20 A - Soft diode recovery minimizes snubber stress and reduces EMI filtering requirements in bidirectional topologies.
R_th(j-c)	0.60 K/W - Enables direct heatsink mounting with <1.2°C/W total thermal resistance for reliable 40 A operation at 100°C case temperature.

Pinout & Package

IKP40N65F5XKSA1 uses the PG-TO220-3 package: insulated plastic housing with metal tab (collector) and three leads. The backside metal tab is electrically connected to the collector terminal and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control input requiring ±20 V rating; low input capacitance (C_ies = 2500 pF) eases gate driver design.
Pin 2	Emiter	Power return node; referenced to gate drive ground; internal emitter inductance ≤13 nH limits voltage spikes during fast switching.
Backside metal tab	Collector	Main high-side power terminal and primary thermal interface; must be electrically isolated from heatsink unless circuit topology permits common-collector configuration.

Key Features

Feature	Design Value
TRENCHSTOP™ 5 IGBT die	Reduces switching energy (E_ts = 0.46 mJ @ 20 A) by >30% vs. Gen 4, enabling higher frequency operation without efficiency penalty.
RAPID 1 antiparallel diode	Soft reverse recovery (dirr/dt = –280 A/µs) suppresses voltage ringing and reduces snubber losses in bridge-leg commutation.
JEDEC qualification	Validated for industrial power control applications per AEC-Q101 stress test conditions, ensuring long-term reliability under thermal cycling and humidity.
Pb-free RoHS compliance	Meets EU Directive 2011/65/EU with matte tin lead plating; compatible with standard wave soldering (260°C, 10 s).

Applications

Solar String Inverters

Uninterruptible Power Supplies

Use Scenario: DC-to-AC inversion stage in residential and commercial photovoltaic systems operating at 30–60 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side IGBT switch in 3-phase inverter leg, paired with complementary low-side device and RAPID 1 diode handling freewheeling current.

Use Value: Low V_CE(sat) and soft diode recovery reduce thermal stress on heatsinks and improve MPPT efficiency by minimizing conduction and switching losses across partial-load conditions.

Use Scenario: Online double-conversion UPS where bidirectional power flow requires low-loss, fast-recovery switching in rectifier and inverter stages.

IC Role / Device Role / Timing Role: IGBT in IGBT-diode half-bridge module performing AC line synchronization and battery charging/discharging control.

Use Value: 175°C junction rating allows compact thermal design under sustained overload (e.g., 150% for 10 s), while low Q_G enables precise PWM timing control with minimal gate drive power.

Industrial Welding Converters

Mid-Frequency Induction Heaters

Use Scenario: Inverter stage of IGBT-based arc welding power supplies delivering 10–20 kHz square-wave output with rapid current slew rates.

IC Role / Device Role / Timing Role: Primary switching element in full-bridge topology, conducting high peak currents (up to 120 A pulsed) with controlled di/dt.

Use Value: Fast turn-off (t_f = 16 ns) and low tail current minimize energy dissipation during arc initiation and short-circuit events, extending device lifetime.

Use Scenario: Resonant inverter driving induction coils at 20–50 kHz in metal heating and brazing equipment.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS)-capable IGBT in series-resonant LLC topology, leveraging low C_oss (50 pF) and soft diode recovery for efficient commutation.

Use Value: Low reverse recovery charge (Q_rr = 0.45 µC) prevents excessive voltage spikes during ZVS transitions, reducing snubber component size and improving overall system power density.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT with integrated diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW40N65F5	Same die, but in PG-TO247-3 package with lower R_th(j-c) (0.60 K/W same), higher P_tot (255 W), and larger creepage/clearance.	Better suited for higher-power (≥6 kW), air-cooled industrial drives where mechanical robustness and thermal headroom are critical.	Select when board space permits TO247 footprint and thermal budget exceeds 120 W at 100°C case temperature.
FGA40N65SMD	650V/40A IGBT with integrated diode, but Gen 4 technology: higher V_CE(sat) (1.8 V), slower t_d(off) (220 ns), and no RAPID 1 soft recovery.	Acceptable for cost-sensitive 20–30 kHz applications where EMI and efficiency are secondary to BOM cost.	Choose only if legacy design reuse or lower gate charge sensitivity is required; avoid in new solar/UPS designs targeting >98% efficiency.

Compared with IKW40N65F5, IKP40N65F5XKSA1 trades package size and thermal margin for PCB-mount compatibility and lower assembly cost; versus FGA40N65SMD, it delivers measurable gains in switching speed, diode softness, and junction temperature capability-directly enabling smaller heatsinks and higher power density.

Availability

IKP40N65F5XKSA1 is available at Aetrix Electronics and suitable for solar converters, uninterruptible power supplies, and industrial welding converters requiring stable component supply, JEDEC-qualified reliability, and RoHS-compliant manufacturing.

Supply support for IKP40N65F5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The TRENCHSTOP™ 5 family targets high-efficiency, high-frequency power conversion in industrial motor drives, solar inverters, and UPS systems-designed to replace older IGBT generations with superior conduction-switching trade-offs and integrated diode performance.

FAQ

What is the maximum recommended gate resistor value for IKP40N65F5XKSA1 in a 50 kHz inverter?

A 15 Ω gate resistor is specified in the datasheet for switching characterization at 50 kHz. Using >22 Ω increases turn-on delay and fall time, risking shoot-through in bridge configurations and raising E_on by up to 25%. For 50 kHz operation, 10–15 Ω provides optimal balance between switching speed and gate oscillation damping.

Can IKP40N65F5XKSA1 replace IKP20N65F5 in an existing design?

No-IKP20N65F5 is rated for 20 A, while IKP40N65F5XKSA1 handles 40 A continuous. Direct replacement risks overcurrent stress on gate driver and PCB traces not sized for doubled current. Thermal interface and heatsink capacity must also be revalidated, as power dissipation scales nonlinearly with load.

Is the backside collector tab electrically isolated in IKP40N65F5XKSA1?

No-the metal tab is internally connected to the collector terminal and is not electrically isolated. Mounting requires either insulating thermal pads or isolated mounting hardware when the heatsink is grounded or at a different potential than the collector node.

Does IKP40N65F5XKSA1 support parallel operation?

Yes-its positive V_GE(th) temperature coefficient (4.0 V typ. at 25°C, increasing with temperature) enables current sharing across paralleled devices. However, layout symmetry, matched gate drive impedance, and individual emitter resistors (0.1 Ω) are mandatory to ensure balanced dynamic current distribution at high di/dt.

IKP40N65F5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 74 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 40A

Power - Max:: 255 W

Switching Energy:: 360µJ (on), 100µJ (off)

Input Type:: Standard

Gate Charge:: 95 nC

Td (on/off) @ 25°C:: 19ns/160ns

Test Condition:: 400V, 20A, 15Ohm, 15V

Reverse Recovery Time (trr):: 60 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IKP40N65F5XKSA1 FAQ

1.How can I place an order for IKP40N65F5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKP40N65F5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKP40N65F5XKSA1 reliable?

The price and inventory of IKP40N65F5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKP40N65F5XKSA1 is usually 5 days.

3.What payment methods are accepted for IKP40N65F5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKP40N65F5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKP40N65F5XKSA1?

IKP40N65F5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKP40N65F5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKP40N65F5XKSA1?

For technical support, including IKP40N65F5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKP40N65F5XKSA1 requirements.

6.How does Aetrix verify that IKP40N65F5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKP40N65F5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKP40N65F5XKSA1 meets industry standards.

7.What is the process for return or replacement of IKP40N65F5XKSA1?

All IKP40N65F5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKP40N65F5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKP40N65F5XKSA1 part is unused and in its original packaging.

Return procedure for IKP40N65F5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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