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Infineon Technologies IKQ100N120CH7XKSA1

Part No.:
IKQ100N120CH7XKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixIKQ100N120CH7XKSA1.pdf
Description:
IGBT TRENCH FS 1200V 166A TO247
Quantity:
Payment:
Payment
Shipping:
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Inventory:159

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Product details

Overview

IKQ100N120CH7XKSA1 from Infineon is a 1200 V, 100 A high-speed TRENCHSTOP™ IGBT 7 co-packed with a full-rated 100 A ultra-fast recovery emitter-controlled diode in a PG-TO247-3-PLUS package. It delivers VCE(sat) = 1.7 V at 25°C, tr = 59 ns, and Qrr = 3.08 µC, enabling high-efficiency hard-switching in 3-level NPC/T-type inverters for industrial UPS and EV-charging systems.

For engineers reviewing the IKQ100N120CH7XKSA1 datasheet, IKQ100N120CH7XKSA1 pinout, IKQ100N120CH7XKSA1 application, or IKQ100N120CH7XKSA1 equivalent, key selection criteria include its positive VCE(sat) temperature coefficient for stable paralleling, soft-commutating diode behavior, 175°C max junction rating, and low Eoff (2.52 mJ) at 25°C for high-frequency operation.

Technical Context

This device integrates an IGBT and a matched rapid diode in a single TO247-3-PLUS package, sharing thermal and electrical interfaces to minimize parasitic inductance (LE = 13 nH). Its gate charge (QG = 696 nC) and low Cres/Cies ratio support fast, controllable switching with reduced voltage overshoot.

The IGBT uses TRENCHSTOP™ 7 cell architecture for optimized conduction–switching trade-off, while the diode features emitter control for soft reverse recovery (trr = 148 ns at 25°C, Irrm = 39 A) and low Qrr. Both elements are qualified per JEDEC47/20/22 for industrial reliability.

Key Specifications

Parameter Value and Actual Design Meaning
VCE 1200 V - supports DC-link voltages up to 960 V in 3L-NPC topologies with margin.
IC / IF 100 A continuous - rated for both IGBT collector and diode forward current at Tc = 100°C.
VCE(sat) 1.7 V @ 100 A, 25°C - enables low conduction loss in high-power inverters.
tr / tf 59 ns / 30 ns @ 100 A - supports >20 kHz hard-switching with minimal dead-time requirements.
Qrr 3.08 µC @ 25°C - reduces diode-induced turn-on loss and EMI in bridge-leg commutation.
Rth(j-c) (IGBT) 0.16–0.21 K/W - allows direct heatsink mounting with predictable thermal resistance for thermal design.
Tvj(max) 175°C - extends safe operating area under overload and transient conditions.

Pinout & Package

Package: PG-TO247-3-PLUS (3-pin, isolated tab, enhanced creepage/clearance, RoHS-compliant lead plating).

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Tab) Collector (IGBT) / Cathode (Diode) Electrically common high-current output node; thermally coupled to heatsink via isolated metal tab.
Pin 2 Gate (IGBT) Control input for IGBT switching; requires <±20 V rating and low-inductance gate drive path.
Pin 3 Emitter (IGBT) / Anode (Diode) Common emitter-anode reference; serves as power return and gate drive reference point.

Key Features

Feature Design Value
Co-packaged IGBT + Diode Single-package integration eliminates inter-device layout mismatch and reduces stray inductance by >30% vs discrete pairing.
Positive VCE(sat) tempco Enables stable current sharing across parallel devices without external current-balancing resistors.
Soft-commutating diode Low dirr/dt (−359 A/µs) and controlled Irrm (39 A) suppress voltage spikes and reduce snubber stress.
Ultra-low Qrr 3.08 µC at 25°C cuts diode-induced turn-on loss by ~40% vs prior-generation rapid diodes.
JEDEC-qualified Validated per JEDEC47/20/22 for industrial environments-ensures long-term reliability under thermal cycling and humidity.

Applications

Industrial UPS Systems EV Charging Stations

Use Scenario: Three-level NPC inverter stage converting DC bus to 50/60 Hz AC output with <1% THD.

IC Role / Device Role / Timing Role: High-side/low-side switching element in leg pairs; handles 10–25 kHz PWM with zero-voltage switching assist.

Use Value: Low Eoff (2.52 mJ) and soft diode recovery enable >98.2% system efficiency at full load while meeting IEC 62040-3 immunity requirements.

Use Scenario: Bidirectional AC/DC converter in 11–22 kW AC charging units with active PFC and isolation stage.

IC Role / Device Role / Timing Role: Main inverter switch in interleaved boost-PFC and DC-link inverter; operates at 16–20 kHz with adaptive dead time.

Use Value: 175°C Tvj(max) and robust SOA allow sustained 100 A operation during grid transients without derating.

Photovoltaic String Inverters Industrial Welding Power Supplies

Use Scenario: Transformerless string inverter with unipolar modulation and leakage current suppression.

IC Role / Device Role / Timing Role: DC-link switching device in H-bridge output stage; commutates at 18 kHz with precise shoot-through prevention.

Use Value: 13 nH internal emitter inductance minimizes voltage overshoot during diode reverse recovery, reducing need for RC snubbers.

Use Scenario: Inverter-based arc welding supply delivering 200–500 A DC output with dynamic droop control.

IC Role / Device Role / Timing Role: Primary switching device in resonant LLC or phase-shifted full-bridge topology; handles repetitive 100–200 A pulsed loads.

Use Value: High IC(pulse) (400 A) and low Rth(j-c) (0.16 K/W) sustain peak currents during arc ignition without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT+diode module applications.

Alternative Part Technical Difference Application Difference Selection Advice
IKW100N120CS7 Same 1200 V/100 A rating but in TO247-4L package with Kelvin emitter; lower VCE(sat) (1.65 V) and QG (620 nC); no integrated diode. Requires external diode; better suited for ultra-high-frequency (>30 kHz) servo drives where gate drive precision outweighs integration benefit. Select when gate drive loop inductance must be minimized and discrete diode optimization is acceptable.
FF100R12ME4 1200 V/100 A EconoDUAL™ 2-module; includes NTC, press-fit terminals, and dual IGBT/diode pairs; higher Rth(j-c) (0.25 K/W). Targeted at 3-phase motor drives with integrated baseplate cooling; not pin-compatible; requires PCB redesign. Select for scalable multi-kW systems needing built-in thermal monitoring and standardized busbar interface.

Compared with IKW100N120CS7 and FF100R12ME4, IKQ100N120CH7XKSA1 uniquely balances integrated diode functionality, TO247-3 simplicity, and soft-recovery performance-making it optimal for cost-sensitive, space-constrained 3L inverter designs where board-level integration and EMI control are critical.

Availability

IKQ100N120CH7XKSA1 is available at Aetrix Electronics and suitable for industrial UPS, EV-charging infrastructure, and photovoltaic string inverters requiring stable component supply, long-lifecycle assurance, and consistent parametric performance across production batches.

Supply support for IKQ100N120CH7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

This part belongs to the TRENCHSTOP™ IGBT 7 family, engineered specifically for high-efficiency, high-reliability hard-switching inverters in renewable energy and industrial power conversion systems.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG(off) ≥ 4 Ω for SOA compliance. For 100 A operation at 175°C, a 7 Ω gate resistor achieves td(off) = 607 ns and Eoff = 4.52 mJ-balancing speed and voltage overshoot. Values above 12 Ω increase switching losses disproportionately without meaningful dv/dt reduction.

Does this device require a negative gate voltage for turn-off?

No. The device is fully specified for VGE = 0 V turn-off and exhibits stable blocking at VCE = 1200 V with zero gate bias. A −5 V to −8 V negative bias may improve noise immunity in high-dv/dt environments but is not required for functional operation per JEDEC qualification.

Can IKQ100N120CH7XKSA1 be paralleled without external emitter resistors?

Yes. Its positive VCE(sat) temperature coefficient ensures inherent current balancing across parallel units. Testing confirms <5% current imbalance at 100 A per device with matched gate drive and thermal mounting-no emitter resistors needed for up to four devices in parallel.

Is the integrated diode rated for continuous 100 A conduction?

Yes. The diode is rated for IF = 100 A continuous at Tc = 88°C (Table 4), matching the IGBT's IC rating. Its VF = 2.5–3.0 V and low Qrr ensure low forward loss and minimal reverse recovery stress in bidirectional switching applications.

IKQ100N120CH7XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TRENCHSTOP™
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
1200 V
Current - Collector (Ic) (Max):
166 A
Current - Collector Pulsed (Icm):
400 A
Vce(on) (Max) @ Vge, Ic:
2.15V @ 15V, 100A
Power - Max:
721 W
Switching Energy:
6.7mJ (on), 2.52mJ (off)
Input Type:
Standard
Gate Charge:
696 nC
Td (on/off) @ 25°C:
66ns/547ns
Test Condition:
-
Reverse Recovery Time (trr):
148 ns
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3-U01

IKQ100N120CH7XKSA1 FAQ

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Please submit a Request for Quotation (RFQ) for IKQ100N120CH7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of IKQ100N120CH7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKQ100N120CH7XKSA1 is usually 5 days.

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IKQ100N120CH7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

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5.How can I obtain technical support or documentation for IKQ100N120CH7XKSA1?

For technical support, including IKQ100N120CH7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKQ100N120CH7XKSA1 requirements.

6.How does Aetrix verify that IKQ100N120CH7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKQ100N120CH7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKQ100N120CH7XKSA1 meets industry standards.

7.What is the process for return or replacement of IKQ100N120CH7XKSA1?

All IKQ100N120CH7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKQ100N120CH7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKQ100N120CH7XKSA1 part is unused and in its original packaging.

Return procedure for IKQ100N120CH7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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