Infineon Technologies IKQ100N120CS7XKSA1

Overview

IKQ100N120CS7XKSA1 from Infineon is a 1200 V, 100 A short-circuit rugged TRENCHSTOP™ IGBT 7 co-packed with a full-current soft-recovery Emitter Controlled 7 diode in PG-TO247-3-PLUS package. It delivers V_CE(sat) = 2.0 V at T_vj = 175 °C, 8 µs short-circuit withstand time, and optimized hard-switching performance for 2-level inverters and 3-level NPC/T-type topologies. Used in industrial motor drives and solar inverters requiring high-voltage robustness and thermal stability.

For engineers reviewing the IKQ100N120CS7XKSA1 datasheet, IKQ100N120CS7XKSA1 pinout, IKQ100N120CS7XKSA1 application, or IKQ100N120CS7XKSA1 equivalent, key selection criteria include short-circuit ruggedness (8 µs), junction temperature capability (–40 to 175 °C), co-packaged diode Q_rr (6.84 µC typ. at 25 °C), and gate charge (610 nC) for gate driver sizing and switching loss estimation.

Technical Context

This IGBT employs TRENCHSTOP™ 7 silicon technology with enhanced carrier lifetime control and field-stop design, enabling low conduction loss while maintaining fast, controllable turn-off. Its co-packaged Emitter Controlled 7 diode features soft recovery (trr = 203 ns typ. at 25 °C) and low reverse recovery charge (Q_rr = 6.84 µC), minimizing voltage overshoot and EMI in hard-switched converters.

The device is rated for 1200 V DC collector-emitter voltage and supports pulsed collector current up to 300 A. Thermal resistance from junction-to-case is 0.13–0.18 K/W for the IGBT and 0.24–0.33 K/W for the diode, enabling high-power operation with standard heatsinking in industrial 3-phase inverters.

Key Specifications

Pinout & Package

Package: PG-TO247-3-PLUS (3-pin, isolated mounting hole, enhanced creepage/clearance, NN3.7 variant). Dimensions comply with Infineon outline PG-TO247-3-PLUS-NN3.7; case material is molded epoxy with copper baseplate for low thermal resistance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Compared with IKW40N120H3, IKQ100N120CS7XKSA1 delivers 2.5× higher current capability and guaranteed short-circuit ruggedness, enabling smaller system size and simpler protection. Versus FF100R12ME4, it offers lower gate charge and direct TO-247 mounting but requires external thermal sensing and discrete layout.

Availability

IKQ100N120CS7XKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, solar inverters, and industrial power supplies requiring stable component supply, long-lifecycle support, and JEDEC-qualified reliability.

Supply support for IKQ100N120CS7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global manufacturing and R&D infrastructure.

This device belongs to the TRENCHSTOP™ IGBT 7 product line, engineered specifically for high-efficiency, high-reliability industrial inverters operating at 1200 V class with demanding thermal and fault-tolerance requirements.

FAQ

What is the maximum allowable gate-emitter voltage for IKQ100N120CS7XKSA1?

The absolute maximum DC gate-emitter voltage is ±20 V, with transient capability up to ±25 V for pulses ≤ 0.5 µs and duty cycle < 0.001. Exceeding ±20 V continuously risks gate oxide degradation and threshold voltage shift. Gate driver design must include clamping (e.g., Zener diodes) to ensure V_GE remains within this limit under all operating and fault conditions.

Does IKQ100N120CS7XKSA1 include an integrated diode, and what are its key recovery characteristics?

Yes-it is co-packed with a full-rated soft-recovery Emitter Controlled 7 (EC7) diode. At T_vj = 25 °C and I_F = 100 A, trr = 203 ns (typ.), Q_rr = 6.84 µC (typ.), and I_rrm = 62 A (typ.). Recovery remains soft at elevated temperature (trr = 351 ns, Q_rr = 15 µC at 175 °C), minimizing voltage spikes and EMI in hard-switched topologies.

Can IKQ100N120CS7XKSA1 be used in 3-level T-type inverters, and what layout considerations apply?

Yes-Infineon explicitly validates this part for 3-level NPC and T-type topologies. Layout must minimize stray inductance (<30 nH) in both main power loop and gate loop; use symmetric double-sided copper pours, Kelvin emitter connection for current sensing, and low-inductance gate resistor placement adjacent to the package. The PG-TO247-3-PLUS NN3.7 outline supports these requirements via enhanced creepage and isolated mounting hole.

What thermal derating applies when operating at T_c = 100 °C?

At T_c = 100 °C, the continuous collector current rating drops to 126 A (from 188 A at 25 °C), and total power dissipation is limited to 412 W. Junction temperature must not exceed 175 °C-designers must calculate actual T_vj using R_th(j-c) = 0.13–0.18 K/W and measured T_c, then apply safety margin per Infineon's 80% recommendation for long-term reliability.