Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IKQ100N60TAXKSA1

Part No.:
IKQ100N60TAXKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixIKQ100N60TAXKSA1.pdf
Description:
IGBT 600V TO247-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,859

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IKQ100N60TAXKSA1 from Infineon is a 600V, 100A low-loss IGBT in TRENCHSTOP™ and Fieldstop technology, co-packaged with a soft, fast-recovery Emitter Controlled diode in a single PG-TO247-3 package. It delivers 1.5 V typical VCE(sat) at 100 A and 25°C, 5 µs short-circuit withstand time, and operates up to 175°C junction temperature - designed for high-efficiency DC/AC inverters in automotive powertrain systems.

For engineers reviewing the IKQ100N60TAXKSA1 datasheet, IKQ100N60TAXKSA1 pinout, IKQ100N60TAXKSA1 application, or IKQ100N60TAXKSA1 equivalent, key selection criteria include VCE(sat) stability over temperature, diode reverse recovery charge (Qrr = 2.80 µC @ 25°C), gate charge (QG = 610 nC), thermal resistance (Rth(j–c) = 0.21 K/W), and AEC-Q101 qualification for automotive reliability.

Technical Context

This IGBT employs trench-gate and field-stop architecture optimized for 600V industrial and automotive switching, featuring a positive temperature coefficient in VCE(sat) for inherent current sharing and rugged short-circuit capability (5 µs, tested 100%). Its integrated Emitter Controlled diode provides soft, fast recovery (trr = 225 ns @ 25°C) with low EMI and tightly distributed parameters.

The device uses a monolithic dual-die DuoPack configuration in a single TO-247-3 housing: one die for the IGBT and one for the antiparallel diode, sharing common emitter terminal. Gate drive requires ±20 V rating, and dynamic performance is characterized under standardized inductive load conditions (VCC = 400 V, IC = 100 A, RG = 3.6 Ω).

Key Specifications

ParameterValue and Actual Design Meaning
VCE600 V - Maximum blocking voltage for use in 400 V DC bus inverters with safety margin
IC100 A - Continuous collector current at TC = 130°C, defining thermal design envelope
VCE(sat)1.5 V (typ. @ 25°C) - Low conduction loss enabling high efficiency at rated current
tSC5 µs - Guaranteed short-circuit robustness under VGE = 15 V, critical for fault-tolerant motor drives
QG610 nC - Gate charge value determining required driver peak current and switching speed trade-off
Rth(j–c)0.21 K/W - Junction-to-case thermal resistance enabling compact heatsink sizing
Tvj(max)175°C - Maximum operating junction temperature supporting high ambient automotive environments

Pinout & Package

IKQ100N60TAXKSA1 is housed in a PG-TO247-3 plastic package with isolated mounting flange, optimized for high-power thermal dissipation and mechanical robustness in automotive modules.

Pin/TerminalCircuit RoleDesign Meaning
Collector (C)Main high-side power terminalConnects to DC+ bus; carries full load current and must be routed with low-inductance layout
Gate (G)Control input for IGBT channelRequires low-impedance gate driver path; sensitive to noise due to 610 nC QG and ±20 V rating
Emitter (E)Common emitter for IGBT and antiparallel diodeShared return path for both devices; critical reference point for gate drive and current sensing

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive powertrain applications including main inverter and PTC heater control
Soft, fast-recovery Emitter Controlled diodeQrr = 2.80 µC @ 25°C and trr = 225 ns - reduces voltage overshoot and EMI during commutation
Positive VCE(sat) temperature coefficientEnables parallel operation without external current-sharing resistors
100% short-circuit testedEach unit validated for 5 µs withstand under production test conditions, ensuring field reliability
Low EMI designResult of controlled di/dt via soft recovery and low internal inductance (LE = 13 nH)

Applications

Main InverterAir-Con Compressor

Use Scenario: High-voltage traction inverter converting battery DC to 3-phase AC for electric vehicle motors.

IC Role / Device Role / Timing Role: Primary switching element in 6-pack inverter leg; handles 100 A continuous current with precise PWM timing.

Use Value: 1.5 V VCE(sat) and 5 µs short-circuit rating enable high efficiency and fault resilience in ISO 26262-compliant systems.

Use Scenario: Variable-speed compressor drive in EV HVAC systems operating from 400 V DC bus.

IC Role / Device Role / Timing Role: Half-bridge switch controlling motor phase current; synchronized with space-vector modulation.

Use Value: Soft diode recovery (Qrr = 2.80 µC) minimizes voltage spikes during freewheeling, reducing snubber losses and EMI filtering cost.

PTC Heater ControlIndustrial Motor Drives

Use Scenario: Solid-state switching of high-current PTC heating elements in battery thermal management systems.

IC Role / Device Role / Timing Role: High-side switch enabling on/off and burst-mode control of resistive loads up to 100 A.

Use Value: 175°C max junction temperature supports sustained operation in confined under-hood environments without derating.

Use Scenario: 600 V industrial servo and pump inverters requiring high reliability and thermal stability.

IC Role / Device Role / Timing Role: Core power switch in three-phase inverter stage; operated with gate drivers delivering ≥2 A peak current.

Use Value: Tight parameter distribution and 0.21 K/W Rth(j–c) ensure consistent performance across production batches and long-term thermal cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IKW100N60T77th-generation TRENCHSTOP IGBT; lower VCE(sat) (1.35 V typ.), higher QG (720 nC), same PG-TO247-3 packageOptimized for higher-frequency switching (>15 kHz); less suitable for ultra-low-loss 8–10 kHz motor drivesSelect when prioritizing reduced conduction loss over gate drive complexity and switching loss balance
FGH100T65SHD650 V SiC MOSFET; zero Qrr, lower switching loss, but requires >18 V gate drive and lacks integrated diodeDemands redesigned gate driver and external anti-parallel SiC diode; not drop-in compatibleChoose only for new designs targeting >30 kHz operation and system-level efficiency gains beyond silicon limits

Compared with IKW100N60T7 and FGH100T65SHD, IKQ100N60TAXKSA1 offers optimal balance of low VCE(sat), proven short-circuit ruggedness, and integrated diode - making it preferred for cost-sensitive, thermally constrained automotive inverters where gate drive simplicity and reliability are paramount.

Availability

IKQ100N60TAXKSA1 is available at Aetrix Electronics and suitable for automotive main inverters, air-conditioning compressors, and PTC heater control systems requiring stable component supply and AEC-Q101 compliance.

Supply support for IKQ100N60TAXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with leadership in automotive and industrial power electronics.

IKQ100N60TAXKSA1 belongs to the TRENCHSTOP™ 600 V IGBT series, engineered specifically for high-efficiency, high-reliability DC/AC conversion in electric vehicle powertrain systems.

FAQ

What is the maximum allowable gate-emitter voltage for IKQ100N60TAXKSA1?

The absolute maximum gate-emitter voltage is ±20 V, as specified in the datasheet's "Maximum Ratings" table. Exceeding this rating risks permanent gate oxide damage. Recommended operating range is –10 V to +15 V for reliable turn-off and turn-on, with 15 V recommended for nominal drive to achieve specified VCE(sat) and switching times.

Is IKQ100N60TAXKSA1 suitable for paralleling multiple devices?

Yes - its positive temperature coefficient in VCE(sat) ensures inherent current sharing between paralleled units. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling to maintain uniform junction temperatures. The device is 100% dynamically tested to guarantee parameter consistency essential for stable parallel operation.

Does IKQ100N60TAXKSA1 include an integrated freewheeling diode?

Yes - it integrates a soft, fast-recovery Emitter Controlled diode in a DuoPack configuration within the same TO-247-3 package. This diode shares the emitter terminal with the IGBT and exhibits Qrr = 2.80 µC and trr = 225 ns at 25°C, eliminating need for external diodes in standard inverter topologies.

What thermal interface material is recommended for mounting IKQ100N60TAXKSA1?

Infineon specifies that thermal grease with Rth(c–s) ≤ 0.1 K/W is required to meet the stated Rth(j–c) = 0.21 K/W and Rth(j–a) = 40 K/W ratings. Standard silicone-based thermal pastes meeting ASTM D5470 standards are appropriate; phase-change pads may be used if their effective thermal resistance under compression meets the 0.1 K/W limit.

IKQ100N60TAXKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TrenchStop™
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Not For New Designs
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
160 A
Current - Collector Pulsed (Icm):
400 A
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 100A
Power - Max:
714 W
Switching Energy:
3.1mJ (on), 2.5mJ (off)
Input Type:
Standard
Gate Charge:
610 nC
Td (on/off) @ 25°C:
30ns/290ns
Test Condition:
400V, 100A, 3.6Ohm, 15V
Reverse Recovery Time (trr):
225 ns
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3-46

IKQ100N60TAXKSA1 FAQ

1.How can I place an order for IKQ100N60TAXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKQ100N60TAXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKQ100N60TAXKSA1 reliable?

The price and inventory of IKQ100N60TAXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKQ100N60TAXKSA1 is usually 5 days.

3.What payment methods are accepted for IKQ100N60TAXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKQ100N60TAXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKQ100N60TAXKSA1?

IKQ100N60TAXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKQ100N60TAXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKQ100N60TAXKSA1?

For technical support, including IKQ100N60TAXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKQ100N60TAXKSA1 requirements.

6.How does Aetrix verify that IKQ100N60TAXKSA1 is sourced from the original manufacturer or authorized distributors?

All IKQ100N60TAXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKQ100N60TAXKSA1 meets industry standards.

7.What is the process for return or replacement of IKQ100N60TAXKSA1?

All IKQ100N60TAXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKQ100N60TAXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKQ100N60TAXKSA1 part is unused and in its original packaging.

Return procedure for IKQ100N60TAXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IKQ100N60TAXKSA1 Tags

  • IKQ100N60TAXKSA1
  • IKQ100N60TAXKSA1 PDF
  • IKQ100N60TAXKSA1 Datasheet
  • IKQ100N60TAXKSA1 Specifications
  • IKQ100N60TAXKSA1 Images
  • Infineon Technologies
  • Infineon Technologies IKQ100N60TAXKSA1
  • Buy IKQ100N60TAXKSA1
  • IKQ100N60TAXKSA1 Price
  • IKQ100N60TAXKSA1 Distributor
  • IKQ100N60TAXKSA1 Supplier
  • IKQ100N60TAXKSA1 Wholesale
Related Products
STGD3NB60SDT4
STGD3NB60SDT4

STMicroelectronics

HGTD1N120BNS9A
HGTD1N120BNS9A

onsemi

STGF7NB60SL
STGF7NB60SL

STMicroelectronics

FGD5T120SH
FGD5T120SH

onsemi

STGB3NC120HDT4
STGB3NC120HDT4

STMicroelectronics

IKP20N60TXKSA1
IKP20N60TXKSA1

Infineon Technologies

STGW30H60DFB
STGW30H60DFB

STMicroelectronics

STGB30M65DF2
STGB30M65DF2

STMicroelectronics

IKB20N60TATMA1
IKB20N60TATMA1

Infineon Technologies

STGB30V60DF
STGB30V60DF

STMicroelectronics

IKW30N60DTPXKSA1
IKW30N60DTPXKSA1

Infineon Technologies

ISL9V3040P3
ISL9V3040P3

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER