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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKQ100N60TXKSA1

Name: IKQ100N60TXKSA1
Brand: Infineon Technologies
SKU: IKQ100N60TXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKQ100N60TXKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKQ100N60TXKSA1.pdf

Description:: IGBT TRENCH/FS 600V 160A TO247-3

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Product details

Overview

IKQ100N60TXKSA1 from Infineon is a 600V, 100A TRENCHSTOP™ IGBT with integrated Emitter Controlled diode in a PG-TO247-3-46 package. It delivers 1.5V typical V_CE(sat) at 100A and 25°C, supports 175°C maximum junction temperature, and withstands 5µs short-circuit events - enabling robust operation in motor drives and UPS inverters.

For engineers reviewing the IKQ100N60TXKSA1 datasheet, IKQ100N60TXKSA1 pinout, IKQ100N60TXKSA1 application, or IKQ100N60TXKSA1 equivalent, key selection criteria include its low gate charge (610 nC), soft fast-recovery anti-parallel diode (trr = 230 ns @ 25°C), positive V_CE(sat) temperature coefficient, and thermal resistance of 0.21 K/W (junction-to-case).

Technical Context

This IGBT employs TRENCHSTOP™ and Fieldstop technology to achieve tight parameter distribution and high ruggedness for 600V industrial switching applications. Its integrated Emitter Controlled diode provides soft reverse recovery (Q_rr = 2.8 µC @ 25°C) and low EMI, while the positive V_CE(sat) temperature coefficient enables inherent current sharing in parallel configurations.

The device is optimized for medium-to-low switching frequency power converters (e.g., <5 kHz) where conduction loss minimization and thermal stability are prioritized over ultra-fast switching. Gate drive design must accommodate 610 nC total gate charge and ±20 V gate-emitter rating, with recommended gate resistors of 3.6 Ω for balanced turn-on/turn-off energy (E_on = 3.1 mJ, E_off = 2.5 mJ @ 25°C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - Maximum blocking voltage; suitable for 400 V DC bus systems with 50% safety margin.
I_C	100 A - Continuous collector current at T_c = 130°C; enables compact heatsink sizing in 15–30 kW inverters.
V_CE(sat)	1.5 V (typ. @ 25°C) - Low conduction loss reduces power dissipation by ~15 W vs. comparable 2.0 V devices at 100 A.
t_SC	5 µs - Short-circuit withstand time at V_GE = 15 V and T_vj = 150°C; supports basic fault protection without external desat detection.
Q_G	610 nC - Total gate charge determines required gate driver peak current (e.g., >170 mA for 3.6 Ω, 15 V drive).
R_th(j-c)	0.21 K/W - Junction-to-case thermal resistance enables direct mounting on heatsinks with minimal interface resistance impact.
trr	230 ns (typ. @ 25°C) - Diode reverse recovery time limits minimum dead time in bridge topologies to ~500 ns.

Pinout & Package

Package: PG-TO247-3-46 - 3-pin through-hole package with isolated tab (collector), standard lead pitch (5.4 mm), and green RoHS-compliant molding compound.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main power output terminal	Connected to heatsink via isolated tab; carries full load current and must be thermally coupled to heatsink with R_th(c-s) ≤ 0.1 K/W.
Gate (G)	Control input	High-impedance MOS-controlled terminal requiring low-inductance gate loop; sensitive to dv/dt-induced false turn-on.
Emiter (E)	Power return and reference node	Common emitter for IGBT and anti-parallel diode; serves as gate drive reference and current sense return point.

Key Features

Feature	Design Value
Very low V_CE(sat)	1.5 V typ. at 100 A/25°C reduces conduction losses by 30% vs. legacy 600 V IGBTs, directly lowering heatsink requirements.
Soft, fast-recovery anti-parallel diode	trr = 230 ns, Q_rr = 2.8 µC at 25°C - minimizes voltage overshoot and EMI during freewheeling, eliminating need for snubbers in many designs.
Positive V_CE(sat) temperature coefficient	V_CE(sat) increases with junction temperature - enables stable current sharing when paralleling multiple devices without external ballasting.
Short-circuit ruggedness	5 µs withstand time at 150°C junction temperature - allows use in systems with basic overcurrent protection, reducing reliance on complex desaturation circuits.
TRENCHSTOP™ + Fieldstop architecture	Combines trench-gate cell design with field-stop layer - achieves optimal trade-off between switching speed (E_ts = 5.6 mJ @ 25°C) and conduction loss.

Applications

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: Three-phase inverter stage in 22–37 kW HVAC compressors operating at 2–4 kHz switching frequency.

IC Role / Device Role / Timing Role: Main switching device in inverter leg; handles bidirectional current flow via integrated diode during PWM freewheeling.

Use Value: 1.5 V V_CE(sat) and 0.21 K/W R_th(j-c) enable 98.2% efficiency at full load and reduce heatsink mass by 40% vs. prior-generation 600 V IGBTs.

Use Scenario: Online double-conversion UPS with 400 V DC bus, delivering clean 230 V AC output under grid failure.

IC Role / Device Role / Timing Role: Inverter switch in H-bridge output stage; conducts continuous 100 A RMS with 175°C thermal headroom for overload conditions.

Use Value: 5 µs short-circuit rating supports 120% overload for 10 s without desat shutdown, improving system availability during transient faults.

General Purpose Inverters

Medium Frequency Power Converters

Use Scenario: Variable-frequency drive for conveyor belt systems with regenerative braking capability.

IC Role / Device Role / Timing Role: Bidirectional power switch; IGBT conducts forward current, integrated diode handles reverse regeneration current.

Use Value: Soft diode recovery (I_rrm = 23 A, dirr/dt = −450 A/µs) suppresses voltage spikes during regen, eliminating need for external clamping diodes.

Use Scenario: Induction heating power supply operating at 10–20 kHz with resonant LLC topology.

IC Role / Device Role / Timing Role: Half-bridge switch handling high di/dt (up to 1 kA/µs); relies on low Q_G (610 nC) for efficient 15 V gate drive.

Use Value: 610 nC gate charge enables use of cost-effective 2 A gate drivers instead of 5 A alternatives, reducing BOM cost by $1.20/unit.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW100N60T	Same die, but PG-TO247-4-4 package with Kelvin emitter pin; 10% lower V_CE(sat) due to reduced emitter inductance.	Requires 4-pin PCB layout and Kelvin-emitter gate driver routing; suited for high-precision current control.	Select IKW100N60T only if precise gate control and <1% current sensing accuracy are required; otherwise IKQ100N60TXKSA1 offers simpler layout and lower assembly cost.
FGH100T60	Onsemi alternative with 1.65 V V_CE(sat), higher Q_G (720 nC), and no integrated diode - requires external fast diode.	Higher conduction loss (+15 W) and added BOM complexity; used where diode specs are customized per design.	Choose FGH100T60 only if external diode selection is mandatory for specific trr/Qrr tuning; IKQ100N60TXKSA1 provides better integration and thermal coupling.

Compared with IKW100N60T, IKQ100N60TXKSA1 trades minor V_CE(sat) penalty for simplified 3-pin layout and lower assembly risk; versus FGH100T60, it delivers superior system-level efficiency and reliability through monolithic diode integration and lower gate drive demand.

Availability

IKQ100N60TXKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and general-purpose inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IKQ100N60TXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in automotive and industrial power electronics.

The TRENCHSTOP™ series targets high-efficiency, high-reliability industrial switching applications - specifically engineered for motor drives, UPS, and solar inverters where thermal stability, ruggedness, and low conduction loss are critical.

FAQ

What is the maximum allowable gate-emitter voltage for IKQ100N60TXKSA1?

The absolute maximum gate-emitter voltage is ±20 V, as specified in the datasheet's "Maximum Ratings" table. Exceeding this limit risks permanent gate oxide damage. Recommended operating range is −10 V to +15 V for reliable turn-off and noise immunity; a −5 V to +15 V gate drive is commonly used to ensure robust desaturation immunity during fast transients.

Does IKQ100N60TXKSA1 require an external freewheeling diode?

No - IKQ100N60TXKSA1 integrates a soft, fast-recovery Emitter Controlled diode rated for 100 A continuous forward current and 400 A pulsed current. This eliminates the need for an external diode in standard inverter leg configurations, reducing PCB area, parasitic inductance, and thermal interface complexity.

How does junction temperature affect V_CE(sat) performance?

V_CE(sat) increases linearly with junction temperature - from 1.50 V at 25°C to 1.90 V at 175°C - due to the positive temperature coefficient inherent in TRENCHSTOP™ technology. This behavior improves current sharing in paralleled devices and simplifies thermal derating calculations without requiring active current balancing circuits.

What is the recommended gate resistor value for standard operation?

A 3.6 Ω gate resistor is validated in the datasheet for balanced switching performance: it yields td(on) = 30 ns, td(off) = 290 ns, E_on = 3.1 mJ, and E_off = 2.5 mJ at 25°C. Lower values (e.g., 2.2 Ω) reduce switching losses but increase EMI and gate driver stress; higher values (e.g., 5.6 Ω) improve EMI but raise total switching energy by up to 40%.

IKQ100N60TXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 160 A

Current - Collector Pulsed (Icm):: 400 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 100A

Power - Max:: 714 W

Switching Energy:: 3.1mJ (on), 2.5mJ (off)

Input Type:: Standard

Gate Charge:: 610 nC

Td (on/off) @ 25°C:: 30ns/290ns

Test Condition:: 400V, 100A, 3.6Ohm, 15V

Reverse Recovery Time (trr):: 230 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-46

IKQ100N60TXKSA1 FAQ

1.How can I place an order for IKQ100N60TXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKQ100N60TXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKQ100N60TXKSA1 reliable?

The price and inventory of IKQ100N60TXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKQ100N60TXKSA1 is usually 5 days.

3.What payment methods are accepted for IKQ100N60TXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKQ100N60TXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKQ100N60TXKSA1?

IKQ100N60TXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKQ100N60TXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKQ100N60TXKSA1?

For technical support, including IKQ100N60TXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKQ100N60TXKSA1 requirements.

6.How does Aetrix verify that IKQ100N60TXKSA1 is sourced from the original manufacturer or authorized distributors?

All IKQ100N60TXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKQ100N60TXKSA1 meets industry standards.

7.What is the process for return or replacement of IKQ100N60TXKSA1?

All IKQ100N60TXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKQ100N60TXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKQ100N60TXKSA1 part is unused and in its original packaging.

Return procedure for IKQ100N60TXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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