Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKQ120N120CH7XKSA1

Name: IKQ120N120CH7XKSA1
Brand: Infineon Technologies
SKU: IKQ120N120CH7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IKQ120N120CH7XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: -

Datasheet:: IKQ120N120CH7XKSA1.pdf

Description:: IGBT

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:336

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IKQ120N120CH7XKSA1 from Infineon is a high-speed 1200 V, 120 A TRENCHSTOP™ IGBT 7 co-packed with a full-rated 120 A ultra-fast recovery emitter-controlled 7 Rapid diode in PG-TO247-3-PLUS package. It delivers V_CE(sat) = 1.7 V at 25°C, t_rr = 146 ns (25°C), and Q_rr = 3.45 µC, enabling high-efficiency hard-switching in industrial UPS, EV-charging, and string inverters.

For engineers reviewing the IKQ120N120CH7XKSA1 datasheet, IKQ120N120CH7XKSA1 pinout, IKQ120N120CH7XKSA1 application, or IKQ120N120CH7XKSA1 equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient for stable paralleling, low switching losses (E_on = 7.77 mJ, E_off = 2.95 mJ @ 600 V/120 A), and 175°C maximum junction temperature rating.

Technical Context

This device implements Infineon's TRENCHSTOP™ IGBT 7 silicon architecture optimized for high-frequency hard-switching topologies-including 2-level inverters and 3-level NPC/T-type configurations-by minimizing tail current and gate charge (Q_G = 834 nC) while maintaining robust short-circuit withstand time (t_sc ≥ 3 µs).

The integrated 7 Rapid diode features soft commutation, ultra-low Q_rr, and controlled reverse recovery (I_rrm = 46 A, dI_rr/dt = −444 A/µs), reducing voltage overshoot and EMI in bidirectional power stages without requiring external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1200 V - supports DC-link voltages up to 1000 V in 3-phase rectified systems with safety margin.
I_C	120 A continuous - rated for sustained conduction at T_c = 100°C, matching typical module-level thermal design targets.
V_CE(sat)	1.7 V @ 25°C - enables low conduction loss in high-current paths, critical for >98% system efficiency targets.
t_rr	146 ns @ 25°C - ensures fast, soft diode turn-off with minimal voltage spike during IGBT turn-on in half-bridge legs.
Q_rr	3.45 µC @ 25°C - reduces reverse recovery energy (E_rec = 1.02 mJ), lowering total switching loss and heatsink requirements.
R_th(j-c) (IGBT)	0.15–0.19 K/W - enables direct mounting on heatsinks with predictable thermal resistance for accurate junction temperature estimation.
T_vj(max)	175°C - allows operation under transient overload conditions common in welding and UPS peak-load scenarios.

Pinout & Package

Package: PG-TO247-3-PLUS (3-pin, isolated tab, enhanced creepage/clearance, RoHS-compliant lead plating). Dimensions per Infineon outline PG-TO247-3-PLUS-NN3.7.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side power terminal	Connected to DC-link positive; carries full load current and withstands 1200 V blocking.
Gate (G)	Control input	Drives IGBT channel; requires 15 V nominal drive with ±20 V absolute max rating.
Emiter (E)	Power return and reference node	Common emitter for IGBT and diode; serves as circuit ground reference for gate driver.

Key Features

Feature	Design Value
Positive V_CE(sat) tempco	Enables stable current sharing across parallel devices without external ballasting resistors.
Low Q_G (834 nC)	Reduces gate drive power and allows use of smaller, lower-cost gate drivers in high-frequency designs.
Soft-commutating 7 Rapid diode	Minimizes voltage overshoot and EMI during freewheeling, eliminating need for RC snubbers in many topologies.
175°C T_vj(max)	Extends usable lifetime under thermal stress and supports compact heatsink designs in space-constrained applications.
Pb-free, RoHS-compliant	Meets global environmental compliance requirements for industrial and automotive-grade power electronics.

Applications

Industrial UPS

EV-Charging Stations

Use Scenario: Online double-conversion UPS delivering clean, uninterrupted AC output during grid failure or sag.

IC Role / Device Role / Timing Role: IGBT/diode pair in inverter stage converting DC bus to regulated 50/60 Hz AC with low THD.

Use Value: Low V_CE(sat) and soft diode recovery reduce conduction + switching losses, improving battery runtime and thermal management.

Use Scenario: High-power AC/DC and DC/DC conversion in 11–22 kW onboard chargers and depot charging units.

IC Role / Device Role / Timing Role: Primary switching element in PFC and isolated DC/DC stages operating at 20–50 kHz.

Use Value: High-speed switching (t_on = 67 ns, t_off = 544 ns) enables higher frequency operation, shrinking magnetics and passive size.

String Inverters

Industrial Welding Equipment

Use Scenario: Centralized or multi-string solar inverters converting PV array DC to grid-synchronized AC.

IC Role / Device Role / Timing Role: Switching device in 3-level NPC or T-type inverter topology for reduced dv/dt and harmonic distortion.

Use Value: Co-packaged diode eliminates mismatched recovery behavior, ensuring balanced voltage sharing and reliability in multi-level designs.

Use Scenario: Inverter-based arc welding machines requiring precise current control and rapid duty cycling.

IC Role / Device Role / Timing Role: Main switching device in inverter output stage driving transformer primary with high peak currents.

Use Value: 480 A pulsed current rating and 175°C junction capability support intermittent 300–400 A weld pulses without thermal derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT/diode co-pack applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW120N120CS7	Same 1200 V/120 A rating but TO247-4L package with Kelvin emitter; lower V_CE(sat) (1.65 V) and Q_G (750 nC); no integrated diode.	Requires external diode; suited for ultra-high-efficiency designs where gate drive precision and lowest conduction loss are prioritized over integration.	Select when using active gate driving with Kelvin sensing and discrete diode optimization is acceptable.
FF120R12ME7_B11	1200 V/120 A, 7th-gen TRENCHSTOP™ with 4-pin TO247; includes Kelvin emitter; V_CE(sat) = 1.65 V; Q_G = 720 nC; integrated diode.	Higher cost; superior gate control and lower losses; same thermal envelope but improved dynamic performance.	Prefer for new designs targeting highest efficiency and lowest EMI, especially in 3L-T-type or SiC-hybrid topologies.

Compared with IKW120N120CS7 and FF120R12ME7_B11, IKQ120N120CH7XKSA1 offers optimal balance of integration, cost, and thermal robustness for established industrial inverter platforms where 3-pin simplicity and proven field reliability are critical.

Availability

IKQ120N120CH7XKSA1 is available at Aetrix Electronics and suitable for industrial UPS, EV-charging, and string inverter designs requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IKQ120N120CH7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in high-voltage IGBTs and silicon carbide solutions.

This part belongs to the TRENCHSTOP™ IGBT 7 family, engineered specifically for high-efficiency, high-reliability hard-switching inverters in industrial and renewable energy systems.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG(off) ≥ 3.5 Ω for safe SOA operation. For standard 5.6 Ω gate resistors, turn-off delay is 544 ns at 25°C and 613 ns at 175°C. Higher values increase switching time and losses; values below 3.5 Ω risk exceeding turn-off SOA limits under high V_CC and temperature.

Does this device require a negative gate voltage for turn-off?

No. The device is fully compatible with 0 V / +15 V gate drive. Negative voltage is not required, though −5 V to −8 V may improve noise immunity in high-dv/dt environments. The absolute maximum V_GE rating is ±20 V, and transient rating allows ±25 V for ≤0.5 µs.

How is thermal resistance measured for the co-packed diode?

The diode's R_th(j-c) is specified separately as 0.25–0.33 K/W (typ./max.), measured from diode junction to case under defined test conditions (JEDEC JESD51-14). This value is independent of the IGBT's 0.15–0.19 K/W rating and must be used for diode-specific thermal calculations.

Can this IGBT be paralleled with other IKQ120N120CH7XKSA1 units?

Yes-its positive V_CE(sat) temperature coefficient ensures inherent current sharing. Parallel operation requires matched gate drive layout (equal trace inductance/resistance), identical heatsinking, and symmetrical busbar connections to avoid dynamic imbalance. No external emitter resistors are needed.

IKQ120N120CH7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tube

Product Status:: Active

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: -

Current - Collector (Ic) (Max):: -

Current - Collector Pulsed (Icm):: -

Vce(on) (Max) @ Vge, Ic:: -

Power - Max:: -

Switching Energy:: -

Input Type:: -

Gate Charge:: -

Td (on/off) @ 25°C:: -

Test Condition:: -

Reverse Recovery Time (trr):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IKQ120N120CH7XKSA1 FAQ

1.How can I place an order for IKQ120N120CH7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKQ120N120CH7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKQ120N120CH7XKSA1 reliable?

The price and inventory of IKQ120N120CH7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKQ120N120CH7XKSA1 is usually 5 days.

3.What payment methods are accepted for IKQ120N120CH7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKQ120N120CH7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKQ120N120CH7XKSA1?

IKQ120N120CH7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKQ120N120CH7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKQ120N120CH7XKSA1?

For technical support, including IKQ120N120CH7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKQ120N120CH7XKSA1 requirements.

6.How does Aetrix verify that IKQ120N120CH7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKQ120N120CH7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKQ120N120CH7XKSA1 meets industry standards.

7.What is the process for return or replacement of IKQ120N120CH7XKSA1?

All IKQ120N120CH7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKQ120N120CH7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKQ120N120CH7XKSA1 part is unused and in its original packaging.

Return procedure for IKQ120N120CH7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…