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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKQ120N120CS7XKSA1

Name: IKQ120N120CS7XKSA1
Brand: Infineon Technologies
SKU: IKQ120N120CS7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKQ120N120CS7XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKQ120N120CS7XKSA1.pdf

Description:: IGBT TRENCH FS 1200V 216A TO247

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Product details

Overview

IKQ120N120CS7XKSA1 from Infineon is a short-circuit rugged 1200 V, 120 A TRENCHSTOP™ IGBT 7 co-packed with a full-current soft-recovery Emitter Controlled 7 diode in PG-TO247-3-PLUS package. It delivers V_CE(sat) = 2.0 V at T_vj = 175°C, 8 µs short-circuit withstand time, and optimized hard-switching performance for 2-level inverters and 3-level NPC/T-type topologies. Used in industrial solar inverters requiring high-voltage switching robustness.

For engineers reviewing the IKQ120N120CS7XKSA1 datasheet, IKQ120N120CS7XKSA1 pinout, IKQ120N120CS7XKSA1 application, or IKQ120N120CS7XKSA1 equivalent, key selection criteria include short-circuit ruggedness (8 µs), low V_CE(sat) at elevated junction temperature, dv/dt controllability, co-packaged diode Q_rr and trr, and thermal resistance R_th(j-c) of 0.11–0.15 K/W for the IGBT.

Technical Context

This IGBT employs TRENCHSTOP™ 7 silicon technology with field-stop and trench-gate structures to achieve low conduction loss and controlled switching behavior. Its gate charge (Q_G = 710 nC) and switching energies (E_on = 12.6 mJ, E_off = 9.5 mJ at T_vj = 175°C) are tuned for hard-switched industrial converters operating up to 175°C junction temperature.

The integrated Emitter Controlled 7 diode provides soft reverse recovery (trr = 311 ns, Q_rr = 14.9 µC at T_vj = 175°C) and low forward voltage (V_F = 1.6 V), minimizing commutation losses and voltage overshoot in bidirectional power stages. Both devices share a common thermal path via the TO247-3-PLUS package baseplate.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1200 V - Enables use in 1000 V DC-link solar inverters and industrial medium-voltage drives.
I_C	120 A continuous - Supports output power >150 kW in 2L inverters with forced-air cooling.
V_CE(sat)	2.0 V at T_vj = 175°C - Reduces conduction loss by ~15% vs. prior-gen IGBTs at full thermal load.
t_SC	8 µs - Allows reliable fault handling without desaturation circuitry in motor drive protection schemes.
R_th(j-c) (IGBT)	0.11–0.15 K/W - Enables direct heatsink mounting with <1.5 K/W total thermal resistance for 175°C operation.
Q_rr (Diode)	14.9 µC at T_vj = 175°C - Limits turn-on loss in complementary IGBT during hard commutation.
C_ies	17.3 nF - Determines gate drive strength requirement (≥2 A peak) for 42 ns turn-on delay.

Pinout & Package

Delivered in PG-TO247-3-PLUS package (3-pin, isolated tab, enhanced creepage/clearance), with copper baseplate for low thermal resistance and mechanical robustness in high-power modules.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side current path	Connected to DC-link positive; rated for 1200 V blocking and 360 A pulsed current.
Gate (G)	Control input	Requires ±20 V rating; 710 nC total charge necessitates low-inductance gate loop & 1.3 Ω external resistor for defined switching.
Emiter (E)	Reference node for IGBT and diode	Shared emitter terminal for both IGBT and co-packaged diode; defines current sense reference and gate drive return.

Key Features

Feature	Design Value
Short-circuit ruggedness	8 µs withstand at V_CC ≤ 600 V and T_vj = 150°C - eliminates need for fast desat detection in cost-sensitive drives.
Co-packaged EC7 diode	Soft recovery (trr = 311 ns), low Q_rr = 14.9 µC - reduces voltage spikes and EMI in NPC/T-type inverter legs.
Low V_CE(sat) at high temperature	2.0 V @ T_vj = 175°C - maintains efficiency under sustained overload or ambient heating.
dv/dt controllability	Wide range via gate resistor tuning - supports stable operation across 2L/3L topologies without snubbers.
Thermal resistance	R_th(j-c) = 0.11–0.15 K/W - enables compact heatsink design for 150 kW industrial inverters.

Applications

Industrial Solar Inverters

Medium-Voltage Motor Drives

Use Scenario: Three-level T-type grid-tied inverter converting 1000 V DC PV array output to 690 V AC.

IC Role / Device Role / Timing Role: High-side IGBT switch in active NPC leg, paired with co-packaged diode for freewheeling and regeneration.

Use Value: 8 µs short-circuit ruggedness allows safe shutdown during ground faults; low Q_rr minimizes commutation loss at 16 kHz switching.

Use Scenario: 2-level inverter driving 200 kW induction motor in mining conveyor system.

IC Role / Device Role / Timing Role: Main switching device in phase-leg half-bridge, operating at 4–8 kHz with forced-air cooling.

Use Value: V_CE(sat) = 2.0 V at 175°C sustains efficiency during continuous overload; R_th(j-c) = 0.11 K/W enables thermal margin without liquid cooling.

Uninterruptible Power Supplies

High-Frequency Induction Heaters

Use Scenario: 150 kVA online UPS with bidirectional IGBT-based rectifier/inverter stage.

IC Role / Device Role / Timing Role: Inverter-side switch handling 600 V DC-link and regenerative energy flow.

Use Value: Soft-recovery EC7 diode ensures low EMI during zero-crossing commutation; 1200 V rating accommodates DC-link ripple.

Use Scenario: 50 kW resonant inverter for metal hardening at 20–50 kHz.

IC Role / Device Role / Timing Role: Hard-switched main switch in series-resonant topology with fixed-frequency PWM control.

Use Value: Optimized turn-on/off timing (td(on) = 42 ns, td(off) = 256 ns at 175°C) enables precise dead-time management and ZVS assist.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW120N120CS7	Same die, PG-TO247-3 package (non-PLUS); R_th(j-c) = 0.15–0.19 K/W; no enhanced creepage.	Suitable for lower-power (<100 kW) or space-constrained designs where thermal margin is relaxed.	Select when board layout lacks clearance for PLUS variant or heatsink interface tolerates +0.04 K/W thermal penalty.
FF1200R17ME7_B2	1700 V, 1200 A dual-module; higher current, higher voltage, larger footprint; includes NTC sensor.	Targeted at multi-level traction inverters and wind turbine converters requiring redundancy and sensing.	Choose only when system demands >1700 V blocking or module-level integration; not drop-in compatible.

Compared with IKW120N120CS7, the IKQ120N120CS7XKSA1 offers improved thermal resistance and creepage for higher-power density; versus FF1200R17ME7_B2, it provides discrete flexibility and lower gate drive complexity for industrial inverters below 200 kW.

Availability

IKQ120N120CS7XKSA1 is available at Aetrix Electronics and suitable for industrial solar inverters, medium-voltage motor drives, and uninterruptible power supplies requiring stable component supply, long-lifecycle support, and JEDEC-qualified reliability.

Supply support for IKQ120N120CS7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to the TRENCHSTOP™ IGBT 7 product line, engineered specifically for high-efficiency, high-reliability hard-switching applications in industrial energy conversion systems operating up to 175°C junction temperature.

FAQ

What is the maximum allowable gate-emitter voltage for IKQ120N120CS7XKSA1?

The absolute maximum gate-emitter voltage is ±20 V DC, with transient rating of ±25 V for pulses ≤0.5 µs. Exceeding ±20 V continuously risks oxide degradation and threshold shift; gate drive circuits must include clamping (e.g., TVS diodes) and avoid floating gate conditions during power-up/down sequences.

Does IKQ120N120CS7XKSA1 include an integrated temperature sensor?

No, this device does not integrate a temperature sensor. Junction temperature monitoring requires external methods such as gate-threshold voltage tracking (V_GE(th) drift), thermal imaging, or discrete NTC thermistors mounted on the heatsink near the package baseplate.

Can IKQ120N120CS7XKSA1 be used in parallel configurations?

Yes, but only with strict layout symmetry, matched gate drive impedance (≤±5% variation), and emitter degeneration resistors (0.1–0.2 Ω) to ensure current sharing. Parallel operation requires individual short-circuit protection and thermal derating per device due to parameter spread at high temperature.

What is the recommended gate resistor value for 16 kHz switching in a 3-level T-type inverter?

For 16 kHz operation with minimal overshoot and EMI, a 1.3 Ω gate resistor (as specified in datasheet test conditions) is recommended. Lower values (≤1.0 Ω) increase switching speed but risk oscillation; higher values (>2.2 Ω) reduce EMI but raise switching losses beyond 12.6 mJ E_on + 9.5 mJ E_off at 175°C.

IKQ120N120CS7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TRENCHSTOP™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 216 A

Current - Collector Pulsed (Icm):: 360 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 120A

Power - Max:: 1004 W

Switching Energy:: 10.3mJ (on), 5.72mJ (off)

Input Type:: Standard

Gate Charge:: 710 nC

Td (on/off) @ 25°C:: 44ns/205ns

Test Condition:: -

Reverse Recovery Time (trr):: 205 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-46

IKQ120N120CS7XKSA1 FAQ

1.How can I place an order for IKQ120N120CS7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKQ120N120CS7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKQ120N120CS7XKSA1 reliable?

The price and inventory of IKQ120N120CS7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKQ120N120CS7XKSA1 is usually 5 days.

3.What payment methods are accepted for IKQ120N120CS7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKQ120N120CS7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKQ120N120CS7XKSA1?

IKQ120N120CS7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKQ120N120CS7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKQ120N120CS7XKSA1?

For technical support, including IKQ120N120CS7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKQ120N120CS7XKSA1 requirements.

6.How does Aetrix verify that IKQ120N120CS7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKQ120N120CS7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKQ120N120CS7XKSA1 meets industry standards.

7.What is the process for return or replacement of IKQ120N120CS7XKSA1?

All IKQ120N120CS7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKQ120N120CS7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKQ120N120CS7XKSA1 part is unused and in its original packaging.

Return procedure for IKQ120N120CS7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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