Infineon Technologies IKQ120N60TXKSA1
- Part No.:
- IKQ120N60TXKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- TO-247-3
- Datasheet:
-
IKQ120N60TXKSA1.pdf
- Description:
- IGBT TRENCH FS 600V 160A TO247-3
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
IKQ120N60TXKSA1 from Infineon is a 600 V, 120 A TRENCHSTOP™ IGBT with integrated Emitter Controlled diode in a PG-TO247-3-46 package. It delivers 1.5 V typical VCE(sat) at 120 A and 25°C, supports 175°C maximum junction temperature, withstands 5 µs short-circuit events, and features low gate charge (703 nC) for high-efficiency motor drives and UPS inverters.
For engineers reviewing the IKQ120N60TXKSA1 datasheet, IKQ120N60TXKSA1 pinout, IKQ120N60TXKSA1 application, or IKQ120N60TXKSA1 equivalent, key selection criteria include its soft-recovery anti-parallel diode (trr = 280 ns @ 25°C), positive VCE(sat) temperature coefficient, and thermal resistance of 0.18 K/W (junction-to-case) for reliable thermal management in medium-frequency power converters.
Technical Context
This IGBT uses TRENCHSTOP™ and Fieldstop technology to achieve tight parameter distribution, high ruggedness, and stable performance across temperature. Its integrated Emitter Controlled diode enables soft, fast recovery (Qrr = 3.50 µC @ 25°C) and reduces system-level EMI without external snubbers.
The device operates with a gate-emitter threshold voltage of 4.1–5.7 V and exhibits strong current handling up to 480 A pulsed, supported by a 0.30 K/W diode junction-to-case thermal resistance. Its switching energy (Ets = 6.90 mJ @ 25°C) and low Cres (206 pF) enable efficient operation in hard-switched topologies up to ~20 kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE | 600 V - Withstands DC bus voltages up to 400 V in 3-phase inverters with 30% margin for transients. |
| IC | 120 A continuous - Supports 15–20 kW motor drive output at 175°C junction temperature with proper heatsinking. |
| VCE(sat) | 1.5 V typ. @ 120 A, 25°C - Enables <1.8 W conduction loss per device at rated current, reducing thermal load. |
| tSC | 5 µs - Allows robust short-circuit protection implementation with standard gate driver response times. |
| QG | 703 nC - Enables efficient gate driving with moderate RG values (e.g., 3 Ω), balancing switching speed and oscillation risk. |
| trr | 280 ns @ 25°C - Limits diode reverse recovery stress on IGBT during turn-on, reducing voltage overshoot and losses. |
| Rth(j-c) (IGBT) | 0.18 K/W - Permits direct mounting to heatsink with ≤1.2 K temperature rise at 833 W dissipation (Tc = 25°C). |
Pinout & Package
Package: PG-TO247-3-46 - Three-terminal through-hole package with isolated collector tab, optimized for high-current, high-voltage industrial power modules and discrete half-bridges.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Collector (C) | Main high-side current path | Electrically connected to metal tab; requires insulated mounting and direct thermal interface to heatsink. |
| Gate (G) | Control input for IGBT channel | Low-impedance MOS-controlled terminal; sensitive to ESD and dv/dt-induced false turn-on; requires gate resistor and clamping. |
| Emitter (E) | Current return path for IGBT and diode | Common reference node for both IGBT and anti-parallel diode; must be low-inductance layout to minimize switching overshoot. |
Key Features
| Feature | Design Value |
|---|---|
| Very low VCE(sat) | 1.5 V typ. at 120 A ensures minimal conduction loss and high efficiency in continuous-duty inverters. |
| Soft, fast recovery diode | trr = 280 ns and Qrr = 3.50 µC reduce diode-induced voltage spikes and EMI in hard-switched applications. |
| Positive VCE(sat) tempco | Enables inherent current sharing in parallel configurations without external emitter resistors. |
| 175°C max junction temperature | Supports compact thermal design and extended lifetime in high-ambient environments (e.g., enclosed UPS cabinets). |
| Green package | Halogen-free, RoHS-compliant PG-TO247-3-46 housing meets industrial environmental compliance requirements. |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies (UPS) |
|---|---|
Use Scenario: 15–30 kW variable-frequency drives for HVAC compressors and conveyor systems operating at 2–10 kHz switching frequency. IC Role / Device Role / Timing Role: Main switching device in inverter leg; handles bidirectional current via integrated diode during regeneration. Use Value: Low VCE(sat) and soft diode recovery reduce total losses by ~12% vs. standard 600 V IGBTs, lowering heatsink size and cooling cost. |
Use Scenario: Online double-conversion UPS systems with 400 V DC bus and battery backup, requiring high reliability and fault tolerance. IC Role / Device Role / Timing Role: Inverter-stage power switch; sustains short-circuit events for ≥5 µs to allow controller-level fault shutdown. Use Value: 175°C rating and 5 µs tSC enable fail-safe operation under overload, meeting UL 1778 and IEC 62040-1 safety margins. |
| General Purpose Inverters | Medium-Frequency Power Converters |
Use Scenario: Modular solar string inverters and energy storage system (ESS) bi-directional converters operating at 8–16 kHz. IC Role / Device Role / Timing Role: High-side switch in half-bridge topology; leverages integrated diode for freewheeling during dead-time. Use Value: Low QG (703 nC) and Cres (206 pF) support clean, controllable switching with 3 Ω gate resistors, minimizing driver complexity. |
Use Scenario: Induction heating supplies and welding inverters requiring 10–30 kHz operation with high peak current capability. IC Role / Device Role / Timing Role: Primary switching element in resonant or hard-switched full-bridge; handles 480 A pulsed current during burst-mode operation. Use Value: 480 A pulsed rating and 0.18 K/W Rth(j-c) allow brief overloads without thermal runaway, supporting dynamic load profiles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT-in-DuoPack applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IKW120N60T | Same die, but PG-TO247-4-4 package with Kelvin emitter pin; 10% lower VCE(sat) variation due to separate sense path. | Preferred for high-precision current control or paralleling where emitter inductance must be minimized. | Select IKW120N60T when gate drive stability under high di/dt or multi-device paralleling is critical. |
| FGH120T60SQD | ON Semiconductor part; 1.65 V VCE(sat), higher QG (820 nC), no integrated diode - requires external ultrafast diode. | Suitable for designs already using discrete diodes or needing tighter trr control via component selection. | Choose FGH120T60SQD only if existing layout accommodates separate diode placement and higher gate drive power is acceptable. |
Compared with IKQ120N60TXKSA1, IKW120N60T improves current sensing fidelity at the cost of layout complexity, while FGH120T60SQD trades integration for flexibility in diode selection-neither offers drop-in replacement without board-level changes.
Availability
IKQ120N60TXKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and general-purpose inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up.
Supply support for IKQ120N60TXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power, sensor, and automotive ICs, with core expertise in high-voltage silicon and wide-bandgap solutions.
The TRENCHSTOP™ series targets industrial power conversion, delivering rugged, thermally robust IGBTs with integrated diodes for inverters, UPS, and motor control-designed to replace legacy planar devices with superior efficiency and reliability.
FAQ
What is the maximum recommended gate-emitter voltage for IKQ120N60TXKSA1?
The absolute maximum gate-emitter voltage is ±20 V per datasheet specifications. Operation above +15 V or below –10 V risks permanent gate oxide damage. For reliable switching, Infineon recommends +15 V turn-on and –5 V to –10 V turn-off bias to suppress Miller-induced false triggering under high dv/dt conditions.
Does IKQ120N60TXKSA1 require an external freewheeling diode?
No. The device integrates a soft, fast-recovery Emitter Controlled diode rated for 120 A continuous forward current and 480 A pulsed current. This eliminates the need for an external diode in standard half-bridge or inverter leg configurations, simplifying PCB layout and reducing component count.
How does the 175°C maximum junction temperature impact thermal design?
A 175°C Tvj(max) allows higher case temperatures before derating begins, enabling smaller heatsinks or higher ambient operation (e.g., 70°C cabinet). With Rth(j-c) = 0.18 K/W, a 100°C case temperature yields only a 18°C junction rise-leaving 57°C margin to the 175°C limit at full 120 A conduction.
Can IKQ120N60TXKSA1 be paralleled for higher current capacity?
Yes-its positive VCE(sat) temperature coefficient promotes natural current sharing. Successful paralleling requires matched gate drive impedance, symmetrical layout, and identical heatsink contact resistance. Derate total current by 15% versus sum of individual ratings to account for parameter spread and thermal coupling.
IKQ120N60TXKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- TrenchStop™
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- IGBT Type:
- Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 160 A
- Current - Collector Pulsed (Icm):
- 480 A
- Vce(on) (Max) @ Vge, Ic:
- 2V @ 15V, 120A
- Power - Max:
- 833 W
- Switching Energy:
- 6.2mJ (on), 5.9mJ (off)
- Input Type:
- Standard
- Gate Charge:
- 703 nC
- Td (on/off) @ 25°C:
- 50ns/565ns
- Test Condition:
- 400V, 120A, 3Ohm, 15V
- Reverse Recovery Time (trr):
- 241 ns
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO247-3-46
IKQ120N60TXKSA1 FAQ
1.How can I place an order for IKQ120N60TXKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IKQ120N60TXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IKQ120N60TXKSA1 reliable?
The price and inventory of IKQ120N60TXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKQ120N60TXKSA1 is usually 5 days.
3.What payment methods are accepted for IKQ120N60TXKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKQ120N60TXKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IKQ120N60TXKSA1?
IKQ120N60TXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IKQ120N60TXKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IKQ120N60TXKSA1?
For technical support, including IKQ120N60TXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKQ120N60TXKSA1 requirements.
6.How does Aetrix verify that IKQ120N60TXKSA1 is sourced from the original manufacturer or authorized distributors?
All IKQ120N60TXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKQ120N60TXKSA1 meets industry standards.
7.What is the process for return or replacement of IKQ120N60TXKSA1?
All IKQ120N60TXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKQ120N60TXKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IKQ120N60TXKSA1 part is unused and in its original packaging.
Return procedure for IKQ120N60TXKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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