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Infineon Technologies IKQ120N65EH7XKSA1

Part No.:
IKQ120N65EH7XKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixIKQ120N65EH7XKSA1.pdf
Description:
IGBT TRENCH FS 650V 160A TO247-3
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Inventory:136

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Product details

Overview

IKQ120N65EH7XKSA1 from Infineon is a 650 V, 120 A TRENCHSTOP™ IGBT7 co-packed with an Emitter Controlled 7 antiparallel diode in PG-TO247-3-PLUS package. It delivers low VCE(sat) (1.4–1.65 V), fast switching (td(off) = 287 ns @ 25°C), and soft reverse recovery (trr = 82 ns), enabling high-efficiency hard-switching in industrial UPS and EV-charging inverters.

For engineers reviewing the IKQ120N65EH7XKSA1 datasheet, IKQ120N65EH7XKSA1 pinout, IKQ120N65EH7XKSA1 application, or IKQ120N65EH7XKSA1 equivalent, key selection criteria include junction-to-case thermal resistance (0.23 K/W), gate charge (251 nC), diode Qrr (2.4 µC), and humidity robustness qualification per JEDEC22-A110.

Technical Context

This IGBT7 device employs field-stop trench gate technology optimized for two- and three-level topologies, featuring a dedicated emitter-controlled diode with controlled dIrr/dt (−2320 A/µs) to minimize voltage overshoot and EMI. Its low internal emitter inductance (13 nH) supports stable turn-on behavior under high di/dt conditions.

The integrated diode exhibits temperature-stable reverse recovery (trr increases only 88% from 25°C to 175°C) and low reverse recovery energy (0.46 mJ @ 25°C), reducing system losses in bidirectional power flow applications such as string inverters and welding power supplies.

Key Specifications

ParameterValue and Actual Design Meaning
VCE max650 V - Supports DC-link voltages up to 600 V in 3-phase rectified systems with safety margin.
IC continuous120 A @ Tc = 100°C - Enables compact heatsink design in high-power industrial converters.
VCE(sat)1.4–1.65 V @ 120 A, 15 V VGE - Reduces conduction loss by ~15% vs. IGBT4 equivalents at rated current.
td(off) + tf385 ns @ 25°C - Enables >30 kHz switching in hard-switched PFC and inverter stages without excessive loss penalty.
QG251 nC - Requires gate driver capable of ≥2 A peak sink/source for <100 ns transition times.
Rth(j-c) (IGBT)0.23–0.3 K/W - Allows direct mounting to cold plate with ≤1.2°C/W total thermal path for 249 W dissipation.
trr (diode)82 ns @ 25°C - Limits voltage spike during commutation, easing snubber design in 400–520 V DC-link systems.

Pinout & Package

Package: PG-TO247-3-PLUS (3-pin, isolated tab, enhanced creepage/clearance, NN3.7 variant). Pin assignment verified per Infineon datasheet Rev. 1.20 (2023-11-15).

Pin/TerminalCircuit RoleDesign Meaning
Collector (C)Main power output terminalConnected to DC-link positive; carries full load current and must be routed with low-inductance layout.
Gate (G)Control inputHigh-impedance MOS-driven terminal requiring low-impedance gate loop (<10 nH) to suppress oscillation.
Emiter (E)Power return and reference nodeShared emitter for IGBT and diode; serves as common source for gate drive return and current sensing reference.

Key Features

FeatureDesign Value
Low VCE(sat) with temperature stabilityVCE(sat) rises only 18% from 25°C to 175°C - maintains efficiency across full operating range without derating.
Soft, fast diode recoverytrr = 82 ns, Qrr = 2.4 µC @ 25°C - reduces diode-induced voltage spikes and EMI in bidirectional switching.
Humidity robustnessQualified per JEDEC22-A110 - ensures long-term reliability in humid industrial environments without conformal coating.
Optimized for hard switchingLow tail current + controlled dIrr/dt - enables clean turn-off in non-resonant topologies without active clamping.

Applications

Industrial UPS SystemsEV Charging Stations

Use Scenario: Three-phase IGBT-based inverter stage converting DC bus to 230/400 V AC for battery backup or grid support.

IC Role / Device Role / Timing Role: Main switching device in 2-level or 3-level NPC inverter leg; handles 120 A RMS output current at 16 kHz PWM.

Use Value: Low VCE(sat) and soft diode reduce conduction + commutation losses by ~12% vs. IGBT4, improving system efficiency from 96.1% to 96.8%.

Use Scenario: Onboard or offboard DC fast charger using interleaved boost + inverter topology for 15–30 kW output.

IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge (DAB) or CLLC resonant converter primary side.

Use Value: Fast, low-loss switching enables >98% peak efficiency at 20 kHz while meeting CISPR-25 Class 5 EMI limits due to controlled dIrr/dt.

Photovoltaic String InvertersIndustrial Welding Power Supplies

Use Scenario: 10–25 kW transformerless string inverter with unipolar modulation and anti-islanding protection.

IC Role / Device Role / Timing Role: Half-bridge switch handling 120 A peak current in H6 or HERIC topology; operates at 18–22 kHz.

Use Value: Humidity robustness and JEDEC-qualified reliability ensure >25-year field life in outdoor rooftop installations without encapsulation.

Use Scenario: Inverter-based arc welding supply delivering 200–500 A DC output with rapid current slew rates (>100 A/ms).

IC Role / Device Role / Timing Role: Primary-side IGBT in phase-shifted full-bridge; switches at 25–50 kHz with hard commutation on secondary rectifier.

Use Value: Low internal emitter inductance (13 nH) prevents parasitic oscillation during high-di/dt turn-on, ensuring stable arc initiation and regulation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT module applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IKW120N65ES7Same 650 V/120 A rating but TO247-4L package with Kelvin emitter; lower VCE(sat) (1.35 V typ) and QG (220 nC)Requires 4-pin gate driver layout; better suited for SiC-compatible gate drivers needing precise VGE controlSelect when gate drive precision and <5% conduction loss reduction outweigh layout complexity.
FGH120T65SQD650 V/120 A, but IGBT4 generation; higher VCE(sat) (1.75 V), slower td(off) (420 ns), no humidity qualificationLimited to indoor, climate-controlled environments; not recommended for outdoor EV charging or solarSelect only for cost-sensitive legacy designs where JEDEC22-A110 compliance is not required.

Compared with IKW120N65ES7, IKQ120N65EH7XKSA1 offers simpler 3-pin layout and humidity robustness but trades 0.1 V higher VCE(sat); versus FGH120T65SQD, it delivers measurable efficiency gain and extended environmental qualification at modest cost premium.

Availability

IKQ120N65EH7XKSA1 is available at Aetrix Electronics and suitable for industrial UPS systems, EV-charging infrastructure, and photovoltaic string inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IKQ120N65EH7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to the TRENCHSTOP™ IGBT7 family, engineered specifically for high-efficiency, high-reliability hard-switching applications in industrial power conversion, including UPS, solar inverters, and EV charging.

FAQ

What is the maximum allowable case temperature for continuous operation?

The IKQ120N65EH7XKSA1 supports continuous operation up to Tc = 100°C, delivering 120 A collector current at that condition. At Tc = 25°C, it can handle 160 A. Thermal derating follows the curve in Figure 2 of the datasheet; exceeding 100°C case temperature requires forced cooling or reduced current to maintain Tvj ≤ 175°C.

Is a gate resistor required, and what value is recommended?

Yes - a gate resistor is mandatory for controlled switching. For standard hard-switching at 15 V gate drive, Infineon recommends RG(on) = RG(off) = 10 Ω (per datasheet test conditions). Lower values (e.g., 5 Ω) reduce switching time but increase EMI risk; higher values (e.g., 22 Ω) improve EMI but raise switching losses proportionally.

Does this part include an integrated freewheeling diode?

Yes - it integrates a soft, fast-recovery Emitter Controlled 7 (EC7) diode co-packaged in the same TO247-3-PLUS housing. The diode shares the emitter terminal and is electrically isolated from the IGBT's collector, enabling bidirectional current flow without external components in half-bridge configurations.

How does humidity robustness impact PCB assembly and field use?

Qualified per JEDEC22-A110, the device withstands 85°C/85% RH for 1000 hours without parameter shift or corrosion. This eliminates need for conformal coating in humid environments (e.g., coastal EV chargers, tropical UPS rooms) and allows standard reflow soldering without moisture sensitivity level (MSL) restrictions beyond MSL-1.

IKQ120N65EH7XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TRENCHSTOP™
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
650 V
Current - Collector (Ic) (Max):
160 A
Current - Collector Pulsed (Icm):
480 A
Vce(on) (Max) @ Vge, Ic:
1.65V @ 15V, 120A
Power - Max:
498 W
Switching Energy:
4.2mJ (on), 3.7mJ (off)
Input Type:
Standard
Gate Charge:
251 nC
Td (on/off) @ 25°C:
38ns/287ns
Test Condition:
400V, 120A, 10Ohm, 15V
Reverse Recovery Time (trr):
82 ns
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3-46

IKQ120N65EH7XKSA1 FAQ

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Please submit a Request for Quotation (RFQ) for IKQ120N65EH7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of IKQ120N65EH7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKQ120N65EH7XKSA1 is usually 5 days.

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5.How can I obtain technical support or documentation for IKQ120N65EH7XKSA1?

For technical support, including IKQ120N65EH7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKQ120N65EH7XKSA1 requirements.

6.How does Aetrix verify that IKQ120N65EH7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKQ120N65EH7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKQ120N65EH7XKSA1 meets industry standards.

7.What is the process for return or replacement of IKQ120N65EH7XKSA1?

All IKQ120N65EH7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKQ120N65EH7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKQ120N65EH7XKSA1 part is unused and in its original packaging.

Return procedure for IKQ120N65EH7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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